Infineon Technologies IPTC054N15NM5ATMA1

Overview

IPTC054N15NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency 150 V power conversion, featuring 5.4 mΩ max R_DS(on), 143 A continuous drain current, and PG-HDSOP-16 package with exposed drain tab for thermal performance. It serves as a primary switching device in industrial DC-DC converters, motor drives, and UPS systems requiring robust avalanche capability and low conduction loss.

For engineers reviewing the IPTC054N15NM5ATMA1 datasheet, IPTC054N15NM5ATMA1 pinout, IPTC054N15NM5ATMA1 application, or IPTC054N15NM5ATMA1 equivalent, key selection criteria include its 150 V V_DS, 58 nC total gate charge, 163 nC output charge, 0.6 °C/W junction-to-case thermal resistance, and validated operation across –55 °C to +175 °C junction temperature range.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching speed (t_d(on) = 16 ns, t_d(off) = 21 ns) and low gate charge (Q_g = 58 nC typ). Its 100% avalanche-tested construction ensures ruggedness under inductive load switching.

The PG-HDSOP-16 package integrates an exposed copper drain tab (pins 9–16 + thermal pad) and isolated gate (pin 8), enabling direct heatsink mounting and minimizing thermal impedance (R_thJC = 0.6 °C/W). The source terminals (pins 1–7) are internally paralleled to reduce package inductance and improve current sharing.

Key Specifications

Pinout & Package

PG-HDSOP-16 is a surface-mount, thermally enhanced package with 16 leads and an exposed copper drain tab on the bottom side. Pins 9–16 and the thermal pad form a unified drain connection; pin 8 is the gate; pins 1–7 are paralleled source terminals.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with STL220N15F7AG and IXTH120N15X4, IPTC054N15NM5ATMA1 delivers the lowest conduction loss per unit area and best thermal coupling to PCB, making it optimal for space-constrained, high-power-density industrial inverters and server PSUs where board-level thermal management dominates system efficiency.

Availability

IPTC054N15NM5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and battery protection circuits requiring stable component supply and long-term production continuity.

Supply support for IPTC054N15NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-reliability 100–200 V power conversion in industrial and computing applications where thermal performance and ruggedness are critical.

FAQ

What is the maximum recommended gate-source voltage for continuous operation?

The absolute maximum V_GS is ±20 V, but Infineon specifies 10 V as the nominal drive voltage for full R_DS(on) performance and reliability. Operation above 12 V increases gate oxide stress and accelerates wear-out; below 8 V results in elevated R_DS(on) (up to 6.0 mΩ) and higher conduction loss. A 10 V gate driver with tight regulation (<±0.3 V) is recommended.

Does this MOSFET require a negative gate turn-off voltage in high-dv/dt environments?

No. The device's V_GS(th) range (3.0–4.6 V) and low Crss (25–44 pF) provide sufficient noise immunity for most industrial applications. A –2 V to 0 V turn-off bias is optional-not required-for extreme EMI environments (e.g., adjacent to IGBTs in multi-level inverters), but adds complexity without measurable benefit in typical 150 V bus designs.

Can the PG-HDSOP-16 package be soldered using standard reflow profiles?

Yes. The package is qualified for lead-free reflow per J-STD-020D, with peak temperature ≤ 260 °C for ≤ 30 seconds. Critical process parameters include preheat ramp rate (≤ 3 °C/s), soak time (90–120 s at 150–200 °C), and cooling rate (≤ 6 °C/s). Thermal pad must be stencil-printed with ≥70 % solder paste coverage to ensure mechanical integrity and thermal transfer.

Is the body diode suitable for synchronous rectification in a 150 V LLC converter?

Yes. The body diode exhibits V_SD = 0.83 V (typ) at 50 A and t_rr = 48 ns (typ) at 100 A/µs, enabling efficient synchronous rectification without external diodes. However, its Q_rr (61–121 nC) is higher than discrete Schottkys, so dead-time optimization is essential to avoid cross-conduction loss in high-frequency (>300 kHz) operation.