Infineon Technologies IPTC063N15NM5ATMA1

Overview

IPTC063N15NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency 150 V power conversion, featuring 6.3 mΩ max R_DS(on) at V_GS = 10 V, 122 A continuous drain current (T_C = 25 °C), and 100% avalanche-tested ruggedness. It serves as a primary switching element in industrial DC-DC converters, motor drives, and UPS systems where low conduction loss and robust thermal performance are critical.

For engineers reviewing the IPTC063N15NM5ATMA1 datasheet, IPTC063N15NM5ATMA1 pinout, IPTC063N15NM5ATMA1 application, or IPTC063N15NM5ATMA1 equivalent, key selection criteria include its PG-HDSOP-16 package with exposed drain tab, gate charge profile (Q_G = 50 nC), reverse diode recovery characteristics (Q_rr = 88–176 nC), and JEDEC-qualified industrial temperature range (−55 °C to +175 °C).

Technical Context

This OptiMOSTM 5 device employs trench-gate superjunction architecture to achieve ultra-low R_DS(on) while maintaining fast switching dynamics (t_r = 4.0 ns, t_f = 5.0 ns) and low gate charge (Q_gd = 10–15 nC). Its thermal design supports 0.7 °C/W junction-to-case resistance when mounted on a 6 cm² copper area, enabling high-power density layouts.

The integrated body diode delivers 122 A continuous forward current and exhibits controlled reverse recovery (t_rr = 63–127 ns) with low Q_rr, reducing switching losses in synchronous rectification and half-bridge topologies. Gate threshold voltage (V_GS(th) = 3.0–4.6 V) ensures reliable turn-on with standard 10 V gate drivers.

Key Specifications

Pinout & Package

Package: PG-HDSOP-16 - thermally enhanced 16-pin surface-mount package with exposed drain pad (pins 9–16 and metal tab) for low-inductance, high-current routing and direct heatsink attachment.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with IPB063N15N5 and STP120N15F7, IPTC063N15NM5ATMA1 offers superior thermal performance in space-constrained layouts and guaranteed avalanche immunity-critical for industrial reliability-while maintaining identical conduction efficiency and gate drive compatibility.

Availability

IPTC063N15NM5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and solar string inverters requiring stable component supply across multi-year production cycles.

Supply support for IPTC063N15NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-reliability 100–200 V power conversion in industrial automation, renewable energy, and data center infrastructure.

FAQ

What is the maximum allowable case temperature for continuous operation?

The device is rated for continuous operation up to T_C = 175 °C, as validated per JEDEC JESD47. At this temperature, the continuous drain current derates to 82 A (V_GS = 8 V) and power dissipation drops to 3.8 W with R_thJA = 40 °C/W. Thermal design must ensure the case does not exceed this limit under worst-case ambient and airflow conditions.

Is the body diode suitable for synchronous rectification?

Yes-the integrated body diode is characterized for continuous forward current up to 122 A (T_C = 25 °C) and exhibits controlled reverse recovery (t_rr = 63–127 ns, Q_rr = 88–176 nC), making it suitable for synchronous rectification in DC-DC converters operating up to 500 kHz, provided gate timing avoids cross-conduction.

Does this MOSFET require a negative gate turn-off voltage?

No-this N-channel device operates with 0 V to +10 V gate drive. The gate threshold voltage (V_GS(th) = 3.0–4.6 V) ensures full enhancement at 10 V, and the gate oxide is rated for ±20 V. A negative turn-off voltage is unnecessary and not recommended, as it adds complexity without improving noise immunity or switching behavior.

How is the PG-HDSOP-16 package mounted for optimal thermal performance?

Mounting requires soldering the exposed drain tab (pins 9–16 + metal pad) to a minimum 6 cm² copper area on a 1.5 mm FR4 PCB, using 70 µm thick copper. The board must be vertical in still air. Thermal vias under the tab (≥12×0.3 mm diameter) to inner-layer ground planes further reduce R_thJC by up to 15%, per Infineon's layout guidelines in the datasheet Figure 10.