Infineon Technologies IPTG011N08NM5ATMA1

Overview

IPTG011N08NM5 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-current, high-frequency switching in industrial DC-DC converters and synchronous rectification. It delivers 80 V V_DS, 1.1 mΩ max R_DS(on) at V_GS = 10 V, 408 A continuous drain current (T_C = 25 °C), and 178 nC total gate charge - enabling low conduction and switching losses in 48 V server power supplies.

For engineers reviewing the IPTG011N08NM5 datasheet, IPTG011N08NM5 pinout, IPTG011N08NM5 application, or IPTG011N08NM5 equivalent, key selection criteria include thermal resistance (R_thJC = 0.2 °C/W), avalanche energy rating (E_AS = 817 mJ), reverse diode performance (V_SD = 0.88 V @ 150 A), and HSOG-8 package layout compatibility with high-current PCB routing.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) × Q_G figure-of-merit (FOM) of 196 Ω·nC. Its gate threshold voltage (V_GS(th) = 2.2–3.8 V) ensures robust turn-on under wide V_GS margin while maintaining low dynamic losses via fast switching (t_r = 31 ns, t_f = 30 ns).

The integrated body diode supports synchronous rectification with low reverse recovery charge (Q_rr = 318–636 nC) and fast trr (106–212 ns). Thermal design leverages a thermally enhanced PG-HSOG-8-1 package with exposed drain tab for direct heatsink mounting and minimal junction-to-case resistance.

Key Specifications

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally optimized package with an exposed drain tab on the bottom side and 8 signal terminals arranged in a single-row gull-wing configuration. The large copper drain pad enables low-inductance, high-current connections and direct thermal coupling to heatsinks or PCB copper planes.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with IXTH120N075L2 and STL260N6F7, IPTG011N08NM5 uniquely balances 80 V rating, 1.1 mΩ R_DS(on), and HSOG-8 thermal performance - making it optimal for space-constrained, high-reliability 48 V industrial and server power stages where voltage margin and thermal management are co-critical.

Availability

IPTG011N08NM5 is available at Aetrix Electronics and suitable for server VRMs, industrial 48 V DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPTG011N08NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and qualification infrastructure.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-current power conversion in datacenter, industrial, and telecom infrastructure where low R_DS(on), fast switching, and rugged avalanche capability are mandatory.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies 408 A continuous drain current at T_C = 25 °C, with linear derating to 237 A at T_C = 100 °C. Operation beyond 175 °C junction temperature is prohibited. For sustained 300 A loads, thermal design must maintain T_C ≤ 75 °C using the measured R_thJC = 0.2 °C/W and system-level R_thCA.

Does the device require gate resistors for reliable switching?

Yes - the recommended external gate resistor is 1.8 Ω (per datasheet test condition for switching time measurements). This value balances dv/dt control, ringing suppression, and gate driver stress. Lower values (<1 Ω) increase peak gate current and EMI risk; higher values (>5 Ω) degrade switching speed and efficiency.

Can IPTG011N08NM5 replace older OptiMOSTM 4 devices in existing designs?

Yes, with validation - it shares identical PG-HSOG-8-1 footprint and pinout, but delivers 15% lower R_DS(on) and improved Q_g/R_DS(on) FOM. Layout changes are unnecessary, though gate drive strength and thermal margin should be rechecked due to higher peak current capability.

Is the body diode suitable for reverse conduction in bidirectional topologies?

Yes - the diode is fully characterized with Q_rr = 318–636 nC and t_rr = 106–212 ns at 100 A, supporting controlled reverse recovery in DAB and other bidirectional converters. However, its softness factor is not specified, so dead-time optimization remains essential to avoid cross-conduction.