Infineon Technologies IPTG018N08NM5ATMA1

Overview

IPTG018N08NM5 from Infineon Technologies is an N-channel 80 V OptiMOSTM 5 power MOSFET in PG-HSOG-8-1 package, featuring 1.8 mΩ max R_DS(on), 253 A continuous drain current at T_C=25 °C, 101 nC total gate charge, and 120 nC output charge. It is optimized for high-frequency synchronous rectification in DC-DC converters and motor control inverters.

For engineers reviewing the IPTG018N08NM5 datasheet, IPTG018N08NM5 pinout, IPTG018N08NM5 application, or IPTG018N08NM5 equivalent, key selection criteria include low R_DS(on) × Q_G figure-of-merit, 100% avalanche ruggedness, thermal resistance of 0.4 °C/W (junction-to-case), and validated industrial temperature operation up to 175 °C.

Technical Context

This device employs a trench-gate superjunction structure enabling ultra-low conduction loss while maintaining fast switching performance. Its gate threshold voltage (2.2–3.8 V) supports standard 10 V gate drive, and its reverse diode exhibits 0.88–1.2 V forward voltage at 100 A with 46–92 ns recovery time.

The MOSFET delivers 264 mJ single-pulse avalanche energy and operates within JEDEC-qualified industrial temperature range (−55 to +175 °C). Thermal design is enabled by a dedicated drain-tab thermal path and specified R_thJC = 0.4 °C/W, supporting high-power density PCB layouts with minimal copper area.

Key Specifications

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced 8-pin package with an exposed drain tab on the bottom side for direct heatsinking. The package uses a single large copper drain pad (TAB) and integrates gate and source terminals on the top side for low-inductance layout.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 80 V power MOSFET applications.

Compared with IPB017N08N5 and STL220N8F7, IPTG018N08NM5 offers superior thermal performance via its HSOG drain-tab and balanced trade-off between R_DS(on), Q_G, and ruggedness-making it optimal for thermally dense, high-reliability industrial and telecom power stages.

Availability

IPTG018N08NM5 is available at Aetrix Electronics and suitable for server VRMs, industrial motor inverters, telecom DC-DC converters, and on-board chargers requiring stable component supply across extended production lifecycles.

Supply support for IPTG018N08NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM 5 power transistor product line, engineered specifically for high-efficiency, high-power-density DC-DC conversion and motor drive applications demanding low R_DS(on), fast switching, and robust avalanche performance.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies 253 A continuous drain current at T_C = 25 °C, with linear de-rating above that point. The absolute maximum case temperature is 175 °C, but sustained operation above 125 °C requires derating to ≤146 A (per Table 2) and careful thermal design to maintain junction temperature below 175 °C.

Is the body diode suitable for synchronous rectification without external Schottky diodes?

Yes-the integrated body diode is characterized with t_rr = 46–92 ns and Q_rr = 122–244 nC at 100 A, making it suitable for synchronous rectification in LLC and phase-shifted topologies up to 300 kHz. Its low V_SD (0.88 V) further reduces conduction loss during freewheeling.

Does this MOSFET require gate resistors for reliable switching?

Yes-due to its 101 nC gate charge and fast intrinsic switching (t_r/t_f ≈ 12/17 ns), a series gate resistor (typically 1.5–3.3 Ω) is required to dampen ringing, limit peak gate current, and control dV/dt. Layout must minimize gate loop inductance to prevent oscillation and false triggering.

How is thermal performance affected by PCB copper area?

R_thJA varies from 40 °C/W (with 6 cm² cooling area) to 62 °C/W (minimal footprint). The drain TAB must be soldered to ≥6 cm² of 70 µm thick copper on a vertical FR4 board in still air to achieve rated 231 W power dissipation; insufficient copper causes rapid thermal saturation and current derating.