Infineon Technologies IPTG018N10NM5ATMA1

Overview

IPTG018N10NM5 from Infineon Technologies is a 100 V, 273 A N-channel enhancement-mode MOSFET in PG-HSOG-8-1 package with 1.8 mΩ max R_DS(on), 122 nC total gate charge, and 155 nC output charge. It serves as a high-current synchronous rectifier or primary-side switch in high-frequency DC-DC converters for server power supplies and telecom rectifiers.

For engineers reviewing the IPTG018N10NM5 datasheet, IPTG018N10NM5 pinout, IPTG018N10NM5 application, or IPTG018N10NM5 equivalent, key selection criteria include its 100% avalanche-rated ruggedness, low Q_g × R_DS(on) figure-of-merit (1.8 mΩ × 122 nC = 220 pC·Ω), and thermal resistance of 0.33 °C/W (junction-to-case), critical for high-power density designs.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low on-resistance while maintaining fast switching speed: t_d(on) = 20 ns, t_r = 13 ns, t_d(off) = 49 ns, and t_f = 17 ns at V_DD = 50 V, I_D = 100 A, and R_G,ext = 1.8 Ω. Its gate threshold voltage (2.2–3.8 V) ensures robust noise immunity in industrial environments.

The integrated body diode delivers 191 A continuous forward current with V_SD = 0.86 V (typ.) at I_F = 100 A and T_j = 25 °C, and exhibits t_rr = 56–112 ns under 100 A/µs di/dt - enabling efficient synchronous rectification without external Schottky diodes.

Key Specifications

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced 8-pin package with exposed drain tab (pin 1–7 are source terminals; pin 8 is gate; metal tab is drain). The layout enables low-inductance, high-current PCB routing and direct heatsink mounting via the drain tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100 V MOSFET applications.

Compared with STL220N10F7 and IXFH180N10L2, IPTG018N10NM5 delivers superior power density via lower R_DS(on) × Q_g, reduced package inductance, and optimized thermal path - making it optimal for space-constrained, high-efficiency 500 kHz+ designs where board area and thermal management are critical.

Availability

IPTG018N10NM5 is available at Aetrix Electronics and suitable for server VRMs, telecom rectifiers, industrial motor drives, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPTG018N10NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This part belongs to the OptiMOSTM 5 family - engineered specifically for high-frequency, high-efficiency power conversion in datacenter, telecom, and industrial applications where low R_DS(on) × Q_g and rugged avalanche performance are mandatory.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The maximum continuous drain current is 193 A at T_C = 100 °C and V_GS = 10 V, per Table 2 of the datasheet. This derating reflects thermal limits of the PG-HSOG-8-1 package and ensures reliable operation under sustained high-load conditions without exceeding 175 °C junction temperature.

Does IPTG018N10NM5 support gate voltages below 10 V?

Yes - it is specified down to V_GS = 6 V, where R_DS(on) rises to 2.0 mΩ (max) at I_D = 75 A. The gate threshold voltage range is 2.2–3.8 V, ensuring turn-on stability with standard 5 V logic-level drivers, though full 273 A rating requires ≥10 V gate drive.

How is the drain tab electrically isolated during PCB assembly?

The drain tab is not electrically isolated - it is the main drain terminal and must be soldered directly to a large copper pour connected to the high-side DC bus. Electrical isolation is achieved by keeping this pour separate from all other nets; thermal interface material may be applied between tab and heatsink, but no dielectric layer is required unless system-level isolation mandates creepage/clearance compliance.

Can IPTG018N10NM5 replace older OptiMOSTM 4 devices in existing designs?

Yes - it is pin-compatible with IPTG023N10NM5 and IPTG028N10NM5 in the same PG-HSOG-8-1 package, offering lower R_DS(on) and improved Q_g × R_DS(on). Layout reuse is possible, but gate drive strength and PCB thermal relief should be verified due to higher peak currents enabled by the improved performance.