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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG020N13NM6ATMA1

Name: IPTG020N13NM6ATMA1
Brand: Infineon Technologies
SKU: IPTG020N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG020N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPTG020N13NM6ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:1,488

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Product details

Overview

IPTG020N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-current, high-efficiency motor drives and battery-powered systems. It delivers 135 V drain-source breakdown voltage, 2.0 mΩ maximum R_DS(on) at V_GS = 10 V, 297 A continuous drain current at T_C = 25 °C, 159 nC total gate charge, and 175 °C maximum junction temperature - enabling compact, thermally robust power stages in e-bike controllers and industrial BLDC inverters.

For engineers reviewing the IPTG020N13NM6ATMA1 datasheet, IPTG020N13NM6ATMA1 pinout, IPTG020N13NM6ATMA1 application, or IPTG020N13NM6ATMA1 equivalent, key selection criteria include its ultra-low Q_g × R_DS(on) figure of merit (318 Ω·nC), 154 nC reverse recovery charge (Q_rr) at 500 A/µs, 100% avalanche tested ruggedness, and PG-HSOG-8 package with exposed drain tab for low-inductance, high-current PCB mounting.

Technical Context

This OptiMOSTM 6 device employs a trench-gate superjunction architecture to achieve simultaneous low conduction loss and fast switching. Its 1.7–2.0 mΩ R_DS(on) range (V_GS = 8–15 V) supports efficient operation across wide gate drive voltages, while the 4.5 V gate plateau voltage ensures stable Miller region control during hard-switching transitions.

The integrated body diode exhibits 0.87 V typical forward voltage at 142 A and 25 °C, with 36–72 ns reverse recovery time and tightly controlled Q_rr (154–308 nC), making it suitable for synchronous rectification and bidirectional energy transfer in half-bridge and three-phase topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Withstands DC bus voltages up to 108 V with full safety margin in 48 V–96 V battery systems.
R_DS(on), max	2.0 mΩ at V_GS = 10 V - Enables <1.5 W conduction loss at 142 A, reducing heatsink requirements in space-constrained designs.
I_D, cont	297 A at T_C = 25 °C - Supports peak motor phase currents >250 A in short-duration torque bursts without thermal derating.
Q_g	159 nC - Low gate drive power demand enables use with standard 1-A gate drivers and reduces switching losses in 20–100 kHz PWM applications.
Q_rr	154 nC at 500 A/µs - Minimizes diode-induced voltage spikes and EMI in high-dI/dt motor phases, improving system reliability.
T_j, max	175 °C - Allows sustained operation in sealed enclosures or high-ambient environments without forced cooling.
R_thJC	0.4 °C/W - Enables direct thermal coupling to heatsinks via the exposed drain tab, supporting >300 W steady-state power dissipation.

Pinout & Package

Delivered in PG-HSOG-8 surface-mount package with exposed drain tab (TAB) for thermal and electrical connection to PCB copper area. The 8-pin layout features source terminals on pins 2–8 and gate on pin 1, enabling low-inductance, Kelvin-source sensing configurations.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed metal pad - must be soldered to ≥6 cm² copper pour for thermal management and low-impedance current return path.
Pin 1	Gate	High-impedance control input - requires low-inductance gate loop routing and local 100 nF decoupling to suppress oscillation.
Pins 2–8	Source	Parallel source terminals - enable Kelvin-source feedback for accurate current sensing and reduced common-source inductance in high-frequency switching.

Key Features

Feature	Design Value
Ultra-low R_DS(on) × Q_g FOM	318 Ω·nC - Reduces combined conduction and switching losses by >25% versus prior-generation 100 V MOSFETs in 48 V motor drives.
100% avalanche rated	832 mJ single-pulse E_AS - Absorbs inductive kickback from 69 A motor windings without failure, eliminating need for external snubbers.
Optimized body diode	Q_rr = 154 nC, t_rr = 36 ns - Enables zero-voltage switching (ZVS) in resonant topologies and reduces cross-conduction losses in synchronous rectifiers.
Extended temperature rating	175 °C T_j max - Permits operation in automotive under-hood or industrial motor control cabinets without active cooling.
Halogen-free & RoHS	Compliant per IEC61249-2-21 - Meets environmental compliance requirements for global OEM automotive and industrial equipment programs.

Applications

Electric Power Steering (EPS)

Industrial BLDC Motor Drives

Use Scenario: High-reliability 12–48 V EPS control units requiring fault-tolerant phase switching under vibration and thermal cycling.

IC Role / Device Role / Timing Role: Main phase switch in three-phase inverter bridge, handling 200+ A peak currents with <1 µs dead-time control.

Use Value: 175 °C rating and 100% avalanche testing ensure survival during load dump transients and phase-to-phase short-circuit events.

Use Scenario: Compact, air-cooled 3 kW industrial pump/fan drives operating continuously at 40–60 °C ambient.

IC Role / Device Role / Timing Role: Low-loss output stage switch in 20 kHz PWM inverter, minimizing thermal stress on aluminum heatsinks.

Use Value: 2.0 mΩ R_DS(on) and 0.4 °C/W R_thJC reduce junction-to-case temperature rise to <30 °C at full load, extending lifetime.

E-Bike & E-Scooter Controllers

Server PSU OR-ing Circuits

Use Scenario: 36–72 V battery-powered traction controllers where efficiency and weight are critical constraints.

IC Role / Device Role / Timing Role: Synchronous rectifier in buck-boost pre-regulator and phase-leg switch in field-oriented control (FOC) inverter.

Use Value: Low Q_rr (154 nC) and fast t_rr (36 ns) minimize body diode conduction loss during shoot-through prevention, boosting efficiency by 1.2% at 250 W.

Use Scenario: 12 V OR-ing application in redundant 48 V–12 V intermediate bus converters for AI server racks.

IC Role / Device Role / Timing Role: Back-to-back configured high-side switch enabling hot-swap capability and reverse current blocking.

Use Value: 135 V V_DS rating provides 2× overvoltage margin against 12 V rail transients, while low R_DS(on) cuts conduction loss below 0.5 W per device.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IXTH30N130L	Higher R_DS(on) (3.2 mΩ), higher Q_g (220 nC), TO-247 package	Requires larger heatsink and higher gate drive current; better suited for lower-frequency (<50 kHz), higher-voltage (130 V) industrial SMPS	Select when mechanical mounting compatibility with legacy TO-247 layouts is required and thermal budget allows higher conduction loss.
STH315N10F7-6	Lower voltage rating (100 V), lower R_DS(on) (1.4 mΩ), same PG-HSOG-8 footprint	Not suitable for 135 V bus applications; optimized for 48 V systems with tighter R_DS(on) tolerance but reduced avalanche margin	Choose only for 48 V battery systems where 100 V rating suffices and sub-1.5 mΩ conduction loss is prioritized over ruggedness.

Compared with IXTH30N130L and STH315N10F7-6, IPTG020N13NM6ATMA1 uniquely balances 135 V rating, 2.0 mΩ R_DS(on), and 159 nC Q_g in a thermally optimized surface-mount package - making it the preferred choice for next-gen 48–96 V motor drives demanding both efficiency and ruggedness.

Availability

IPTG020N13NM6ATMA1 is available at Aetrix Electronics and suitable for electric power steering modules, industrial BLDC motor drives, e-bike controllers, and server OR-ing circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IPTG020N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 6 family - engineered specifically for high-efficiency, high-power-density motor control and battery-powered applications where low R_DS(on), fast switching, and ruggedness are co-optimized.

FAQ

What is the maximum allowable PCB copper area for thermal performance?

The datasheet specifies optimal thermal performance with a 6 cm² copper area (single layer, 70 µm thick) connected to the drain tab on a vertical FR4 PCB. Using less than this area increases R_thJA to 62 °C/W, limiting continuous current to ~196 A at 25 °C ambient. For 297 A operation, the full 6 cm² area is mandatory.

Does IPTG020N13NM6ATMA1 support Kelvin-source sensing?

Yes - pins 2–8 are dedicated source terminals, enabling separation of high-current source return (pins 3–8) from low-current sense path (pin 2). This configuration minimizes common-source inductance and improves gate drive stability in high-dI/dt applications like motor phase legs.

Is the 154 nC Q_rr value measured or design-specified?

The 154 nC Q_rr is a design-specified typical value (not production-tested), defined under VR = 68 V, IF = 71 A, and diF/dt = 500 A/µs conditions. It reflects the device's intrinsic body diode behavior and is validated through simulation and characterization - consistent with the 36–72 ns t_rr range also specified as design-defined.

Can this MOSFET replace older OptiMOSTM 5 devices in existing designs?

Yes - IPTG020N13NM6ATMA1 shares identical PG-HSOG-8 footprint and pinout with OptiMOSTM 5 predecessors (e.g., IPT020N10N5), offering drop-in improvement in R_DS(on) (−25%), Q_g (−18%), and Q_rr (−33%). No layout changes are needed, though gate resistor tuning may further optimize switching behavior.

IPTG020N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPTG020N13NM6ATMA1 FAQ

1.How can I place an order for IPTG020N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG020N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG020N13NM6ATMA1 reliable?

The price and inventory of IPTG020N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG020N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG020N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG020N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG020N13NM6ATMA1?

IPTG020N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG020N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG020N13NM6ATMA1?

For technical support, including IPTG020N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG020N13NM6ATMA1 requirements.

6.How does Aetrix verify that IPTG020N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG020N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG020N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG020N13NM6ATMA1?

All IPTG020N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG020N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG020N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPTG020N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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