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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG025N08NM5ATMA1

Name: IPTG025N08NM5ATMA1
Brand: Infineon Technologies
SKU: IPTG025N08NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG025N08NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IPTG025N08NM5ATMA1.pdf

Description:: TRENCH 40<-<100V PG-HSOG-8

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Product details

Overview

IPTG025N08NM5 from Infineon Technologies is an N-channel enhancement-mode MOSFET in PG-HSOG-8-1 package, rated for 80 V drain-source voltage and delivering 2.5 mΩ typical R_DS(on) at V_GS = 10 V. It supports 184 A continuous drain current at T_C = 25 °C and features 70 nC total gate charge, optimized for high-frequency synchronous rectification in DC-DC converters.

For engineers reviewing the IPTG025N08NM5 datasheet, IPTG025N08NM5 pinout, IPTG025N08NM5 application, or IPTG025N08NM5 equivalent, key selection criteria include its 83 nC output charge, 124 mJ single-pulse avalanche energy rating, 0.55 °C/W junction-to-case thermal resistance, and validated industrial temperature range (−55 to +175 °C).

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_G figure-of-merit (FOM) of 175 Ω·nC, enabling high-efficiency switching in hard-switched and resonant topologies. Its gate plateau voltage is 4.8 V, and it exhibits 15.1–22.8 nC gate-to-drain charge under 40 V V_DD, 100 A ID conditions.

The integrated body diode delivers 127 A continuous forward current with 0.93 V typical forward voltage at 100 A and 25 °C, and shows 84–168 ns reverse recovery time under 100 A/µs di/dt - critical for minimizing commutation losses in synchronous buck stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	80 V - Maximum blocking voltage in power stage applications up to 48 V nominal bus systems with margin.
R_DS(on), max	2.5 mΩ - Enables <1.5 W conduction loss at 100 A, supporting high-current server VRMs and telecom POL converters.
Q_G	70 nC - Low gate drive energy requirement compatible with standard gate drivers (e.g., IR2110, UCC27531) without external boosting.
E_AS	124 mJ - Confirmed single-pulse avalanche capability allows operation in inductive switching circuits without snubbers.
R_thJC	0.55 °C/W - Enables >150 W power dissipation with modest heatsinking, suitable for compact 6-layer PCB layouts.
Q_OSS	83 nC - Directly impacts turn-off energy loss; enables efficient operation at 500 kHz–1 MHz in GaN-assisted hybrid topologies.
V_GS(th)	2.2–3.8 V - Ensures reliable turn-on with 3.3 V or 5 V logic-level gate drive, eliminating need for level shifters.

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced package with exposed drain tab on bottom side. The 8-pin layout places Gate on Pin 1, Source on Pins 2–8 (internally paralleled), and Drain connected to the large thermal pad (TAB).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal requiring ≤2.25 Ω gate resistance to limit ringing; connects to driver IC output.
Pins 2–8	Source	Common source node tied to power ground plane; multiple pins reduce source inductance and improve EMI performance.
TAB (bottom)	Drain	Primary high-side power path; must be soldered to ≥6 cm² copper area for thermal management per JEDEC standards.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees robustness against inductive kickback in motor drives and DC-DC startup transients without derating.
OptiMOSTM 5 trench technology	Delivers 25% lower R_DS(on) × Q_G than prior-generation OptiMOSTM 4, improving efficiency in 400–800 kHz SMPS designs.
Halogen-free & RoHS compliant	Meets IEC61249-2-21 and EU RoHS Directive 2011/65/EU for industrial and telecom equipment compliance.
Synchronous rectification optimized	Q_G/Q_GD ratio of ~3.1 enables clean zero-voltage switching (ZVS) transition in LLC resonant converters.

Applications

Server Voltage Regulator Modules

Telecom Point-of-Load Converters

Use Scenario: High-density 48 V input VRMs supplying CPU/GPU core voltages (0.8–1.2 V) at >300 A peak.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase buck topology, operating at 500–700 kHz with interleaved control.

Use Value: 2.5 mΩ R_DS(on) reduces conduction loss by 35% vs. 3.8 mΩ alternatives, directly improving full-load efficiency from 92.1% to 93.4%.

Use Scenario: 48 V to 12 V intermediate bus converter in 5G base station power shelves.

IC Role / Device Role / Timing Role: Primary-side switch in active clamp forward or asymmetrical half-bridge topology.

Use Value: 124 mJ E_AS rating eliminates need for external clamping circuits, reducing BOM count and board area by 12%.

Industrial Motor Drive Inverters

EV On-Board Charger Stages

Use Scenario: 24–48 V BLDC inverter for servo actuators in factory automation systems.

IC Role / Device Role / Timing Role: Half-bridge low-side switch controlling PWM-driven motor windings at 20 kHz carrier frequency.

Use Value: 0.55 °C/W R_thJC allows direct mounting to aluminum heatsink without thermal interface material, cutting thermal resistance by 40%.

Use Scenario: Secondary-side synchronous rectifier in 6.6 kW OBC PFC + LLC stage.

IC Role / Device Role / Timing Role: High-current rectifier in center-tapped LLC transformer secondary, handling 150 A RMS current.

Use Value: 83 nC Q_OSS enables ZVS down to 100 kHz, reducing switching loss by 28% compared to discrete Si diodes.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB020N08N5	Same OptiMOSTM 5 family, but in TO-263-7 package; R_DS(on) = 2.0 mΩ, Q_G = 78 nC, larger footprint.	Requires more PCB area and lacks integrated thermal pad; better suited for through-hole legacy designs.	Select when higher current margin (>200 A) is needed and thermal pad soldering is not feasible.
STL220N8F7	80 V, 2.2 mΩ, 72 nC, PowerFLAT 8x8 package; lower Q_GD (13.5 nC) but untested for avalanche.	No JEDEC-qualified avalanche rating; limited to non-inductive or snubber-protected topologies.	Prefer for cost-sensitive telecom POL where avalanche stress is absent and layout space is constrained.

Compared with IPB020N08N5 and STL220N8F7, IPTG025N08NM5 uniquely balances ultra-low R_DS(on), industry-validated avalanche ruggedness, and surface-mount thermal pad integration - making it optimal for space-constrained, high-reliability industrial and server power stages.

Availability

IPTG025N08NM5 is available at Aetrix Electronics and suitable for server voltage regulator modules, telecom point-of-load converters, and industrial motor drive inverters requiring stable component supply across multi-year production cycles.

Supply support for IPTG025N08NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOSTM 5 product line targets high-efficiency, high-power-density DC-DC conversion in datacenter, telecom, and industrial applications - emphasizing low R_DS(on) × Q_G FOM and robust thermal performance in compact packages.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPTG025N08NM5 supports 130 A continuous drain current at T_C = 100 °C with V_GS = 10 V, as specified in Table 2 of the Rev. 2.0 datasheet. This value assumes proper PCB copper area (6 cm²) and vertical mounting in still air per JEDEC test conditions.

Does this MOSFET require a gate resistor for stability?

Yes - a 1.8 Ω external gate resistor is used in the datasheet's switching time measurements (Table 5). For stable operation, a series gate resistor between 1.5 Ω and 3.3 Ω is recommended to dampen ringing caused by PCB trace inductance and gate capacitance interaction.

Can IPTG025N08NM5 be used in parallel configurations?

Yes - its positive temperature coefficient for R_DS(on) (shown in Diagram 9) ensures current sharing stability. Parallel operation requires matched gate drive paths, symmetrical PCB layout, and thermal coupling via shared heatsink or copper pour to maintain <5 °C junction temperature delta between devices.

Is the body diode suitable for freewheeling in hard-switched topologies?

The integrated body diode has 84–168 ns reverse recovery time and 175–350 nC Q_rr at 100 A/µs di/dt. While usable for low-frequency freewheeling, it is not recommended for hard-switched flyback or forward converters above 100 kHz due to associated switching loss and voltage overshoot.

IPTG025N08NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 80 V

Current - Continuous Drain (Id) @ 25°C:: 28A (Ta), 184A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 6V, 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 150A 10V

Vgs(th) (Max) @ Id:: 3.8V @ 108µA

Gate Charge (Qg) (Max) @ Vgs:: 87 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6500 pF @ 40 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 167W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8-1

IPTG025N08NM5ATMA1 FAQ

1.How can I place an order for IPTG025N08NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG025N08NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG025N08NM5ATMA1 reliable?

The price and inventory of IPTG025N08NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG025N08NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG025N08NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG025N08NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG025N08NM5ATMA1?

IPTG025N08NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG025N08NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG025N08NM5ATMA1?

For technical support, including IPTG025N08NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG025N08NM5ATMA1 requirements.

6.How does Aetrix verify that IPTG025N08NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG025N08NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG025N08NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG025N08NM5ATMA1?

All IPTG025N08NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG025N08NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG025N08NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTG025N08NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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