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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG029N13NM6ATMA1

Name: IPTG029N13NM6ATMA1
Brand: Infineon Technologies
SKU: IPTG029N13NM6ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG029N13NM6ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: -

Datasheet:: IPTG029N13NM6ATMA1.pdf

Description:: TRENCH >=100V

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Inventory:1,800

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Product details

Overview

IPTG029N13NM6ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency motor drives and battery-powered systems, featuring 135 V V_DS, 2.9 mΩ R_DS(on) max at V_GS = 10 V, 212 A continuous drain current, 104 nC total gate charge, and 118 nC reverse recovery charge. It uses PG-HSOG-8 package with exposed drain tab for thermal performance.

For engineers reviewing the IPTG029N13NM6ATMA1 datasheet, IPTG029N13NM6ATMA1 pinout, IPTG029N13NM6ATMA1 application, or IPTG029N13NM6ATMA1 equivalent, key selection criteria include low Q_g×R_DS(on) figure-of-merit, 175 °C operation, 100% avalanche rating, and optimized switching behavior for synchronous rectification in BLDC inverters and e-bike controllers.

Technical Context

This OptiMOSTM 6 device employs trench-gate superjunction architecture to achieve ultra-low R_DS(on) while maintaining fast switching with Q_rr = 118 nC and t_rr = 32–64 ns. Its gate plateau voltage of 4.5 V enables robust drive margin in 12 V gate-drive systems.

The MOSFET supports hard-switched and synchronous rectifier topologies with validated avalanche energy (E_AS = 435 mJ) and thermal resistance R_thJC = 0.5 °C/W, enabling high-power density designs in constrained thermal environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	135 V - Supports 48 V and 60 V nominal battery systems with ≥2× safety margin against transients.
R_DS(on) max	2.9 mΩ at V_GS = 10 V - Enables <1.2 W conduction loss at 200 A, critical for high-current motor phases.
I_D continuous	212 A at T_C = 25 °C - Rated for sustained output in 1–3 kW motor inverters with active heatsinking.
Q_g	104 nC - Low gate drive power requirement; compatible with standard 1-A peak gate drivers at 100 kHz switching.
Q_rr	118 nC - Reduces body-diode switching losses and EMI in synchronous buck and half-bridge configurations.
T_j max	175 °C - Allows operation in sealed enclosures or high-ambient industrial environments without derating.
R_thJC	0.5 °C/W - Enables direct mounting to heatsink via exposed drain tab, supporting >250 W dissipation with ΔT = 125 K.

Pinout & Package

PG-HSOG-8 package with thermally enhanced exposed drain pad (TAB), surface-mount footprint, and 8-pin layout optimized for high-current PCB routing and thermal transfer.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main current path, thermal interface	Exposed copper pad carrying full load current and conducting heat directly to heatsink or PCB copper pour.
Pin 1	Gate	Control terminal requiring low-inductance gate loop; connects to driver IC output with RC snubber option.
Pins 2–8	Source	Parallel-source configuration reduces source inductance and improves switching stability under high di/dt.

Key Features

Feature	Design Value
Optimized FOM (Q_g × R_DS(on))	302 nC·mΩ - Balances switching loss and conduction loss for highest efficiency in 20–100 kHz motor control.
100% unclamped inductive switching (UIS) tested	E_AS = 435 mJ - Guarantees ruggedness during fault conditions like phase short or regenerative braking spikes.
Low Q_rr and fast t_rr	Q_rr = 118 nC, t_rr = 32 ns - Minimizes shoot-through risk and reduces diode recovery loss in synchronous rectifiers.
MOSFET-specific gate threshold	V_GS(th) = 2.5–3.5 V - Ensures clean turn-on with standard 3.3 V/5 V logic-level drivers and avoids partial conduction near zero V_GS.

Applications

Power Tool Motor Inverter

E-Bike 48 V Drive Stage

Use Scenario: High-torque, intermittent-duty BLDC inverter in cordless drills and impact drivers operating up to 200 A peak.

IC Role / Device Role / Timing Role: Main switch in 3-phase inverter leg, handling bidirectional current and regenerative energy during deceleration.

Use Value: 2.9 mΩ R_DS(on) limits conduction loss to <1.2 W at 200 A, extending battery runtime and reducing heatsink size by 35% vs. legacy 5 mΩ devices.

Use Scenario: 48 V battery-powered e-bike controller delivering 500–1000 W continuous power with field-oriented control.

IC Role / Device Role / Timing Role: Synchronous rectifier in high-side and low-side positions of 3-phase inverter, replacing freewheeling diodes.

Use Value: 118 nC Q_rr and 32 ns t_rr reduce body-diode losses by 60% versus standard MOSFETs, improving system efficiency from 92% to 94.5% at 500 W.

Industrial Pump Inverter

UPS DC-AC Bridge

Use Scenario: Sealed, fanless 1.5 kW pump drive operating continuously at 40–60 °C ambient in HVAC and water systems.

IC Role / Device Role / Timing Role: High-current switching element in IGBT-replacement topology, driven by isolated gate driver with 15 V supply.

Use Value: 175 °C T_j rating and 0.5 °C/W R_thJC allow full 212 A rating without forced air, eliminating fan-related reliability concerns.

Use Scenario: Online double-conversion UPS using Si MOSFET-based H-bridge for 1 kVA output with low THD requirements.

IC Role / Device Role / Timing Role: Fast-switching bridge arm device enabling 20 kHz PWM with minimal dead-time distortion.

Use Value: 104 nC Q_g and 16 ns t_d(on) support precise 50 ns dead-time control, reducing output voltage distortion and filter component count.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB029N13N5	Same V_DS (135 V), higher R_DS(on) (3.2 mΩ), TO-263-7 package, no exposed drain tab	Limited thermal performance in space-constrained layouts; requires larger heatsink area	Select when board-level thermal management favors through-hole mounting or when PG-HSOG-8 footprint is unavailable.
STL220N10F7	Lower V_DS (100 V), similar R_DS(on) (2.8 mΩ), same PG-HSOG-8 package, lower Q_g (85 nC)	Not suitable for 48 V systems with >100 V transients; better for 24 V or 36 V battery platforms	Select for cost-sensitive 24–36 V applications where 135 V rating is unnecessary and faster switching is prioritized.

Compared with IPB029N13N5 and STL220N10F7, IPTG029N13NM6ATMA1 delivers superior thermal capability via its exposed drain tab and highest voltage margin for 48 V+ systems, making it optimal for compact, high-power-density motor drives where both electrical and thermal headroom are critical.

Availability

IPTG029N13NM6ATMA1 is available at Aetrix Electronics and suitable for power tool motor inverters, e-bike drive stages, industrial pump inverters, and UPS DC-AC bridges requiring stable component supply across production ramp and long-term maintenance cycles.

Supply support for IPTG029N13NM6ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to the OptiMOSTM 6 family-designed specifically for high-efficiency, high-current switching in battery-powered and motor-control applications where low R_DS(on), fast switching, and ruggedness are mandatory.

FAQ

What is the maximum recommended gate drive voltage for IPTG029N13NM6ATMA1?

The absolute maximum gate-source voltage is ±20 V, but the recommended operating range is 10–15 V for optimal R_DS(on) and safe margin against overshoot. Driving at 12 V achieves full enhancement while avoiding gate oxide stress; 15 V further reduces R_DS(on) by ~15% but requires tighter layout control to suppress ringing.

Does IPTG029N13NM6ATMA1 require external gate resistors in typical motor drive applications?

Yes-external gate resistors (typically 2.2–10 Ω) are required to dampen gate oscillation and control dV/dt during switching. The device's low gate resistance (1.0–1.5 Ω) and 104 nC Q_g make it sensitive to parasitic inductance; a 4.7 Ω resistor balances switching speed (≈30 ns rise time) and EMI suppression in 48 V inverter layouts.

Can IPTG029N13NM6ATMA1 be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (confirmed in Diagram 9) ensures inherent current sharing. For two devices in parallel, use matched gate drive paths, symmetrical PCB layout, and individual 1–2 Ω gate resistors to avoid dynamic imbalance; derate total current by 15% for thermal margin at 175 °C junction.

Is the drain tab electrically isolated from other pins in the PG-HSOG-8 package?

No-the drain tab is electrically connected to the internal drain structure and must be treated as a live high-current node. It is not insulated; isolation requires dielectric thermal interface material between tab and heatsink, and proper clearance/creepage design per IEC 61800-5-1 for functional insulation in motor drives.

IPTG029N13NM6ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: -

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: -

Technology:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: -

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

IPTG029N13NM6ATMA1 FAQ

1.How can I place an order for IPTG029N13NM6ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG029N13NM6ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG029N13NM6ATMA1 reliable?

The price and inventory of IPTG029N13NM6ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG029N13NM6ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG029N13NM6ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG029N13NM6ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG029N13NM6ATMA1?

IPTG029N13NM6ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG029N13NM6ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG029N13NM6ATMA1?

For technical support, including IPTG029N13NM6ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG029N13NM6ATMA1 requirements.

6.How does Aetrix verify that IPTG029N13NM6ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG029N13NM6ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG029N13NM6ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG029N13NM6ATMA1?

All IPTG029N13NM6ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG029N13NM6ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG029N13NM6ATMA1 part is unused and in its original packaging.

Return procedure for IPTG029N13NM6ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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