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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG039N15NM5ATMA1

Name: IPTG039N15NM5ATMA1
Brand: Infineon Technologies
SKU: IPTG039N15NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG039N15NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IPTG039N15NM5ATMA1.pdf

Description:: TRENCH >=100V

Quantity:: RFQ Add To RFQ list

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Inventory:1,800

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Product details

Overview

IPTG039N15NM5ATMA1 from Infineon Technologies is an N-channel enhancement-mode MOSFET in the OptiMOS™ 5 family, designed for high-efficiency power switching in industrial DC-DC converters and motor drives. It features a 150 V drain-source breakdown voltage, 3.9 mΩ maximum R_DS(on) at V_GS = 10 V, 190 A continuous drain current (T_C = 25 °C), and 100% avalanche tested ruggedness. Its PG-HSOG-8 package enables high-current PCB mounting with low thermal resistance.

For engineers reviewing the IPTG039N15NM5ATMA1 datasheet, IPTG039N15NM5ATMA1 pinout, IPTG039N15NM5ATMA1 application, or IPTG039N15NM5ATMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, gate charge profile for hard-switching efficiency, thermal resistance (R_thJC = 0.47 °C/W), and integrated reverse diode performance in synchronous rectification.

Technical Context

This device uses silicon-based planar trench technology optimized for low conduction and switching losses in 150 V industrial power stages. Its gate threshold voltage (V_GS(th) = 3.0–4.6 V) ensures robust noise immunity while enabling standard 10 V gate drive compatibility. The 74 nC total gate charge and 207 nC output charge support fast, controlled turn-on/turn-off in high-frequency SMPS topologies.

The integrated body diode exhibits 0.81–1.0 V forward voltage at 50 A and 25 °C, with 53.5–107 ns reverse recovery time and 77–155 nC Q_rr, making it suitable for synchronous rectification where diode conduction and recovery behavior directly impact system efficiency and EMI.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Maximum blocking voltage for 125 V nominal bus systems with safety margin.
R_DS(on), max	3.9 mΩ at V_GS = 10 V, I_D = 50 A - Enables <1.95 W conduction loss at 70 A, critical for thermal management in compact designs.
I_D, cont	190 A at T_C = 25 °C - Supports high-current motor phase legs or primary-side switches without paralleling.
Q_g, tot	74 nC - Determines gate driver power requirement and switching speed trade-off in 100–500 kHz converters.
R_thJC	0.47 °C/W - Allows direct heatsink mounting via drain tab; enables 319 W power dissipation at ΔT = 150 °C.
E_AS	344 mJ - Confirmed single-pulse avalanche energy rating ensures reliability under inductive load switching stress.
V_GS(th)	3.0–4.6 V - Ensures clean turn-on above typical noise floor while remaining compatible with 5 V logic-level drivers.

Pinout & Package

Package: PG-HSOG-8 - Exposed-drain thermally enhanced SO-8 variant with integrated copper clip for low-inductance, high-current source/drain connections and direct case-to-heatsink thermal path.

Pin/Terminal	Circuit Role	Design Meaning
Drain TAB	Main current path (high-side or low-side switch node)	Electrically and thermally connected to internal die drain; must be soldered to large copper pour or heatsink.
Gate (Pin 1)	Control terminal for channel modulation	High-impedance input requiring low-inductance gate loop; sensitive to ringing due to 1.1–1.6 Ω gate resistance.
Source (Pins 2–8)	Reference node for gate drive and current sensing	Parallel-pin configuration reduces source inductance and improves current sharing across high-frequency switching cycles.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	3.9 mΩ max at 10 V drive enables >98% efficiency in 48 V–72 V industrial DC-DC converters at 50–100 A loads.
100% avalanche rated	344 mJ single-pulse E_AS supports unclamped inductive switching in motor gate drivers without external snubbers.
Optimized gate charge profile	74 nC Q_g and 207 nC Q_oss balance switching speed and EMI in hard-switched topologies up to 300 kHz.
Thermally robust PG-HSOG-8	0.47 °C/W R_thJC allows full 190 A current handling with passive cooling on 40 mm × 40 mm 70 μm copper area.
Industrial qualification	Fully JEDEC-qualified for extended temperature range (−55 °C to +175 °C) and long-term reliability in factory automation equipment.

Applications

Motor Drive Inverter Stage

Industrial DC-DC Converter Primary Switch

Use Scenario: High-current half-bridge leg in servo motor inverters operating at 48–72 V bus with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Low-side switching element handling peak currents up to 190 A with minimal conduction loss and fast turn-off to reduce shoot-through risk.

Use Value: 3.9 mΩ R_DS(on) cuts I²R loss by >30% vs. legacy 6 mΩ devices, reducing heatsink size and improving torque response consistency.

Use Scenario: Primary-side switch in isolated 1 kW telecom-style DC-DC module with 48 V input and 12 V output.

IC Role / Device Role / Timing Role: Hard-switched power transistor operating at 250 kHz with synchronous rectification on secondary side.

Use Value: 74 nC Q_g and 0.47 °C/W R_thJC enable stable operation at 97.2% peak efficiency without forced air cooling.

Solar String Optimizer Switch

EV Onboard Charger PFC Stage

Use Scenario: Bypass switch in photovoltaic module-level power electronics managing partial shading conditions.

IC Role / Device Role / Timing Role: Normally-off switch activated only during mismatch events; must withstand 150 V DC string voltage and conduct up to 15 A continuously.

Use Value: 150 V V_DS rating and −55 °C to +175 °C operating range ensure reliability in outdoor enclosures with wide ambient swings.

Use Scenario: Boost switch in 6.6 kW OBC PFC stage operating at 65–100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: High-reliability switching element subjected to repetitive avalanche stress during line transients and soft-start.

Use Value: 344 mJ E_AS and 100% avalanche testing eliminate need for external clamping, simplifying layout and improving MTBF.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPB039N15N5	Same die, TO-263-7 package; R_thJC = 0.55 °C/W; higher mounting torque requirement.	Better suited for bolt-down heatsink integration; less suitable for dense SMT layouts.	Choose when mechanical robustness and field-serviceable heatsinking outweigh PCB space constraints.
STL220N15F7	150 V, 220 A, R_DS(on) = 3.2 mΩ typ; Q_g = 92 nC; different gate threshold (2.5–3.5 V).	Lower R_DS(on) but higher gate drive demand; less avalanche ruggedness (E_AS not specified).	Prefer only if gate drive capability permits and avalanche stress is absent; verify thermal design with 0.52 °C/W R_thJC.

Compared with IPB039N15N5 and STL220N15F7, IPTG039N15NM5ATMA1 offers the best balance of low-inductance SMT packaging, industry-leading thermal resistance, and guaranteed avalanche capability-critical for industrial motor control and solar optimizer reliability.

Availability

IPTG039N15NM5ATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, solar string optimizers, EV onboard charger PFC stages, and high-power DC-DC converters requiring stable component supply and long-term lifecycle assurance.

Supply support for IPTG039N15NM5ATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOS™ 5 product line delivers high-voltage discrete MOSFETs optimized for efficiency, ruggedness, and thermal performance in industrial automation, renewable energy, and e-mobility power systems.

FAQ

What is the maximum allowable junction temperature for continuous operation?

The absolute maximum junction temperature is 175 °C per datasheet Section 1. Maximum ratings. For reliable long-term operation, Infineon recommends limiting T_j to ≤150 °C under steady-state conditions, especially when operating near I_D = 190 A, to maintain R_DS(on) stability and avoid accelerated wear-out mechanisms.

Is the body diode suitable for synchronous rectification in a 48 V buck converter?

Yes-the integrated body diode has V_SD = 0.81–1.0 V at 50 A and 25 °C, with t_rr = 53.5–107 ns and Q_rr = 77–155 nC. These values support efficient synchronous rectification up to ~200 kHz, though external Schottky diodes may still be preferred for ultra-low V_F in high-efficiency point-of-load designs.

Does this MOSFET require negative gate voltage for safe turn-off in high-dv/dt environments?

No-its gate threshold voltage (3.0–4.6 V) and gate oxide robustness allow safe turn-off with 0 V gate drive. However, applying −5 V enhances noise immunity in noisy industrial environments; the gate-source voltage rating is ±20 V, so −5 V is within specification and reduces risk of spurious turn-on.

Can the PG-HSOG-8 package be reflow soldered using standard lead-free profiles?

Yes-Infineon specifies compatibility with IPC/JEDEC J-STD-020D moisture sensitivity level 1 (MSL-1) and standard Pb-free reflow profiles (peak 260 °C, 10 s max). The exposed drain tab requires adequate stencil aperture and paste volume to ensure void-free solder joints for optimal thermal transfer.

IPTG039N15NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Ta), 190A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 3.9mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 243µA

Gate Charge (Qg) (Max) @ Vgs:: 93 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7300 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 319W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8

IPTG039N15NM5ATMA1 FAQ

1.How can I place an order for IPTG039N15NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG039N15NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG039N15NM5ATMA1 reliable?

The price and inventory of IPTG039N15NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG039N15NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG039N15NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG039N15NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG039N15NM5ATMA1?

IPTG039N15NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG039N15NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG039N15NM5ATMA1?

For technical support, including IPTG039N15NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG039N15NM5ATMA1 requirements.

6.How does Aetrix verify that IPTG039N15NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG039N15NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG039N15NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG039N15NM5ATMA1?

All IPTG039N15NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG039N15NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG039N15NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTG039N15NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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