Infineon Technologies IPTG044N15NM5ATMA1

Overview

IPTG044N15NM5 from Infineon Technologies is a 150 V, 4.4 mΩ N-channel enhancement-mode MOSFET in PG-HSOG-8 package with 174 A continuous drain current at T_C = 25 °C, 100% avalanche tested, and optimized for high-efficiency DC-DC converters and motor drives requiring low conduction loss and robust thermal performance.

For engineers reviewing the IPTG044N15NM5 datasheet, IPTG044N15NM5 pinout, IPTG044N15NM5 application, or IPTG044N15NM5 equivalent, key selection criteria include R_DS(on) ≤ 4.4 mΩ at V_GS = 10 V, Q_g = 71 nC, Q_oss = 200 nC, thermal resistance R_thJC = 0.5 °C/W, and avalanche energy E_AS = 321 mJ - all critical for hard-switched industrial power stages.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 17 ns, t_f = 6.5 ns) and low gate charge (Q_g = 71 nC, Q_gd = 14–21 nC). Its integrated body diode exhibits t_rr = 45–91 ns and Q_rr = 49–98 nC, enabling efficient synchronous rectification in LLC and phase-shifted full-bridge topologies.

The PG-HSOG-8 package features an exposed drain tab for direct thermal mounting, delivering R_thJC = 0.5 °C/W and supporting P_tot = 300 W at T_C = 25 °C. It is fully qualified per JEDEC JESD47 for industrial temperature range (−55 °C to +175 °C) and rated for 100% UIS testing at I_D = 100 A.

Key Specifications

Pinout & Package

PG-HSOG-8 is a thermally enhanced surface-mount package with an exposed drain tab on the bottom side and 8 leads arranged in a single-row gull-wing configuration. The drain tab provides low-inductance, high-current connection and primary thermal path to the PCB heatsink area.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with STL220N15F7AG and IXTH174N15X6, IPTG044N15NM5 offers the best balance of low Q_g/R_DS(on) ratio (16.1 nC/mΩ), surface-mount manufacturability, and guaranteed avalanche ruggedness - making it optimal for automated, high-reliability industrial power modules.

Availability

IPTG044N15NM5 is available at Aetrix Electronics and suitable for industrial motor drives, server DC-DC converters, renewable energy inverters, and EV onboard chargers requiring stable component supply across multi-year production cycles.

Supply support for IPTG044N15NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

This device belongs to the OptiMOSTM 5 family - engineered specifically for high-efficiency, high-current power conversion in industrial and renewable energy systems where low R_DS(on), avalanche ruggedness, and thermal reliability are design-critical.

FAQ

What is the maximum junction temperature rating for IPTG044N15NM5?

The absolute maximum junction temperature is 175 °C, validated per JEDEC JESD47 for industrial applications. Operation at this limit requires strict thermal design: R_thJC = 0.5 °C/W mandates direct heatsink contact to the drain tab, and PCB layout must provide ≥6 cm² of 70 µm copper on FR4 with vertical orientation in still air.

Does IPTG044N15NM5 support gate drive voltages below 10 V?

Yes - it is a normal-level N-channel MOSFET with V_GS(th) = 3.0–4.6 V and specified R_DS(on) down to 4.0 mΩ at V_GS = 8 V and I_D = 25 A. However, full 174 A rating requires V_GS ≥ 10 V; operation at 8 V limits continuous current to 115 A at T_C = 100 °C per datasheet Table 2.

How is the PG-HSOG-8 package different from standard SO-8?

PG-HSOG-8 replaces the plastic body and isolated leads of SO-8 with an exposed metal drain tab and gull-wing leads optimized for thermal and electrical performance. Unlike SO-8, its drain tab is electrically active and must be soldered to a large copper area; pins 2–8 are all internally tied to source, enabling low-inductance Kelvin-source routing and parallel current sharing.

Is the body diode suitable for synchronous rectification in resonant converters?

Yes - the integrated body diode has characterized Q_rr = 49–98 nC and t_rr = 45–91 ns at I_F = 50 A, with soft recovery behavior confirmed in Diagram 12. This enables reliable zero-current switching in LLC and phase-shifted full-bridge topologies without external Schottky assist diodes.