Infineon Technologies IPTG054N15NM5ATMA1

Overview

IPTG054N15NM5 from Infineon Technologies is a 150 V, 143 A N-channel enhancement-mode MOSFET in PG-HSOG-8 package with 5.4 mΩ max R_DS(on) at V_GS = 10 V, 100% avalanche tested, and optimized for high-efficiency DC-DC converters and motor drives requiring low conduction loss and robust thermal performance.

For engineers reviewing the IPTG054N15NM5 datasheet, IPTG054N15NM5 pinout, IPTG054N15NM5 application, or IPTG054N15NM5 equivalent, key selection criteria include R_DS(on) stability over temperature, Q_g = 58 nC for fast switching, Q_oss = 163 nC for reduced turn-off loss, and thermal resistance R_thJC = 0.6 °C/W for high-power density designs.

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve low R_DS(on) × Q_g figure-of-merit (FoM) of 313 Ω·nC, enabling high-frequency operation up to 500 kHz in synchronous buck converters. Its gate plateau voltage is 5.5 V, supporting standard 10 V gate drivers while maintaining noise immunity.

The integrated body diode features t_rr = 48–96 ns and Q_rr = 61–121 nC, enabling efficient hard-switched topologies without external Schottky clamping. Thermal design leverages the exposed drain tab for direct heatsink mounting, achieving 250 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

PG-HSOG-8 package with exposed drain tab (thermal pad) on bottom side; 8-pin surface-mount outline optimized for high-current PCB routing and thermal transfer to heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Compared with STL220N15F7AG and IXFH50N15X3, IPTG054N15NM5 delivers the lowest R_thJC and best R_DS(on) × Q_g FoM in surface-mount form, making it optimal for space-constrained, high-power-density industrial and computing power supplies.

Availability

IPTG054N15NM5 is available at Aetrix Electronics and suitable for motor drives, server PSUs, solar microinverters, and battery energy storage systems requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production lots.

Supply support for IPTG054N15NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949 standards.

This device belongs to the OptiMOSTM 5 family-designed specifically for high-efficiency, high-power-density DC-DC conversion and motor control applications demanding low R_DS(on), fast switching, and rugged avalanche capability.

FAQ

What is the maximum continuous drain current at T_C = 100 °C?

The maximum continuous drain current is 101 A at case temperature of 100 °C and V_GS = 10 V, as specified in Table 2 of the datasheet. This rating accounts for thermal de-rating due to reduced heat transfer at elevated temperatures and must be validated against actual PCB layout and heatsink performance.

Does IPTG054N15NM5 support logic-level gate drive?

No-it is a normal-level MOSFET with V_GS(th) ranging from 3.0 V to 4.6 V and rated for V_GS = 10 V operation. While it may turn on partially at 5 V, full enhancement and guaranteed R_DS(on) require ≥8 V gate drive; logic-level drivers (e.g., 3.3 V or 5 V) are insufficient for reliable conduction.

How is the drain tab electrically isolated in PG-HSOG-8?

The drain tab is not electrically isolated-it is the drain terminal itself, directly connected to the silicon die's drain region. It must be soldered to a PCB copper pour tied to the system drain net and thermally coupled to a heatsink. No insulating pad or sil-pad is required or recommended unless system isolation mandates reinforced insulation.

Can IPTG054N15NM5 replace older OptiMOSTM 4 devices in existing designs?

Yes-pin-compatible with previous OptiMOSTM 4 150 V devices in PG-HSOG-8, offering identical footprint and improved R_DS(on) (−15%), lower Q_g (−12%), and enhanced avalanche ruggedness. Layout reuse is supported, but gate drive strength and layout parasitics should be re-verified due to faster switching edges.