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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG063N15NM5ATMA1

Name: IPTG063N15NM5ATMA1
Brand: Infineon Technologies
SKU: IPTG063N15NM5ATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG063N15NM5ATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IPTG063N15NM5ATMA1.pdf

Description:: TRENCH >=100V

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Product details

Overview

IPTG063N15NM5 from Infineon Technologies is an N-channel enhancement-mode MOSFET optimized for high-efficiency 150 V power conversion, featuring 6.3 mΩ max R_DS(on) at V_GS = 10 V, 122 A continuous drain current, and 100% avalanche-tested ruggedness. It serves as a primary switching device in DC-DC converters, motor drives, and industrial SMPS where low conduction loss and thermal robustness are critical.

For engineers reviewing the IPTG063N15NM5 datasheet, IPTG063N15NM5 pinout, IPTG063N15NM5 application, or IPTG063N15NM5 equivalent, key selection criteria include its PG-HSOG-8 package with exposed drain tab, gate charge profile (Q_G = 50 nC), reverse diode recovery (Q_rr = 88–176 nC), and thermal resistance (R_thJC = 0.7 °C/W).

Technical Context

This OptiMOSTM 5 device uses trench-gate superjunction technology to achieve ultra-low R_DS(on) while maintaining fast switching (t_d(on) = 15 ns, t_f = 5.0 ns) and low gate charge (Q_gd = 10–15 nC). Its 150 V V_DS rating and 154 mJ single-pulse avalanche energy support operation in hard-switched topologies with transient overvoltage stress.

The integrated body diode exhibits low forward voltage (V_SD = 0.84–1.0 V at 50 A) and controlled reverse recovery (t_rr = 63–127 ns), enabling use in synchronous rectification and freewheeling applications without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	150 V - Withstands up to 150 V drain-source blocking voltage, suitable for 48 V and 96 V bus systems with margin.
R_DS(on), max	6.3 mΩ at V_GS = 10 V - Enables <1 W conduction loss at 122 A, reducing heatsink requirements in high-current designs.
I_D, cont.	122 A at T_C = 25 °C - Supports high-power output stages in industrial inverters and server PSUs.
Q_G	50 nC - Low gate drive energy requirement, compatible with standard gate drivers (e.g., 1 A peak) at 100 kHz+ switching.
R_thJC	0.7 °C/W - Enables efficient heat transfer from junction to case, critical for compact thermal design with minimal copper area.
E_AS	154 mJ - Confirmed single-pulse avalanche capability allows reliable operation under inductive turn-off transients.
Q_oss	139 nC - Low output charge reduces turn-off losses and improves light-load efficiency in resonant converters.

Pinout & Package

Package: PG-HSOG-8 - Thermally enhanced surface-mount package with exposed drain tab (TAB) for direct PCB thermal coupling and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed metal pad tied to drain; must be soldered to large copper pour for thermal and current handling.
Pin 1	Gate	Control input; requires low-inductance gate loop layout to minimize ringing during fast switching.
Pins 2–8	Source	Parallel source terminals reduce parasitic inductance and improve current sharing across internal die connections.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	6.3 mΩ max enables >98% efficiency in 122 A, 150 V switch-node applications with minimal conduction loss.
100% avalanche tested	Each unit validated to withstand 154 mJ single-pulse avalanche energy, eliminating need for external clamping in inductive loads.
Optimized gate charge profile	Q_gd/Q_g ratio of ~20–30% ensures clean Miller plateau transition and reduced switching oscillation risk.
Thermally robust construction	R_thJC = 0.7 °C/W and 6.2 °C/W R_thJA (min footprint) supports operation up to 175 °C junction temperature.

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: Half-bridge inverter stage for 3 kW BLDC motor control in factory automation systems.

IC Role / Device Role / Timing Role: High-side and low-side main switching element with synchronous freewheeling via integrated body diode.

Use Value: 6.3 mΩ R_DS(on) cuts conduction loss by 35% vs. legacy 10 mΩ devices, reducing heatsink size by 40% at 100 °C ambient.

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: ZVS-capable main switch leveraging low Q_oss (139 nC) and fast t_f (5.0 ns) for <100 kHz operation.

Use Value: 154 mJ E_AS tolerance eliminates snubber circuits during resonant valley switching failures, improving reliability.

Solar Microinverters

EV Onboard Chargers

Use Scenario: DC-link switching stage in 300 W microinverter with MPPT and grid-synchronization.

IC Role / Device Role / Timing Role: Unidirectional power switch in interleaved boost stage operating at 65–100 kHz.

Use Value: Low Q_g (50 nC) and Q_gd (10–15 nC) enable precise gate timing control with minimal driver power consumption (<150 mW).

Use Scenario: Isolated DC-DC stage in 11 kW bidirectional OBC for Level 2 AC charging.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier with body diode used for startup and fault protection.

Use Value: V_SD = 0.84 V and t_rr = 63 ns minimize reverse recovery loss, increasing full-load efficiency by 0.4% over discrete Schottky solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N15F7	R_DS(on) = 5.5 mΩ (typ), Q_G = 62 nC, PG-HSOG-8 package	Higher gate charge increases driver loss; lower R_DS(on) benefits low-frequency, high-current apps only	Prefer when lowest conduction loss dominates and gate drive capability supports higher Q_G.
IXFH50N15X3	R_DS(on) = 15 mΩ (max), TO-247 package, R_thJC = 0.45 °C/W	Larger footprint and higher R_DS(on) but superior thermal resistance for forced-air cooling	Choose for legacy TO-247 designs requiring higher avalanche margin and simpler thermal interface.

Compared with STL220N15F7 and IXFH50N15X3, IPTG063N15NM5 delivers optimal balance of low R_DS(on), moderate Q_G, and surface-mount thermal performance-making it ideal for space-constrained, high-frequency industrial and EV power stages where PCB thermal management is prioritized over raw avalanche margin.

Availability

IPTG063N15NM5 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, solar microinverters, and EV onboard chargers requiring stable component supply and JEDEC-qualified reliability.

Supply support for IPTG063N15NM5 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The OptiMOSTM 5 product line targets high-efficiency, high-reliability power conversion in industrial, renewable energy, and e-mobility applications-designed specifically to replace older planar MOSFETs with trench-based superjunction architecture for lower losses and improved thermal behavior.

FAQ

What is the maximum recommended gate voltage for IPTG063N15NM5?

The absolute maximum gate-source voltage is ±20 V, but the device is characterized and optimized for operation at V_GS = 10 V for full R_DS(on) specification. Driving above 12 V provides no significant R_DS(on) improvement and increases gate oxide stress risk; 8 V is the minimum recommended for guaranteed 122 A conduction at T_C = 100 °C.

Does IPTG063N15NM5 require a gate resistor for safe operation?

Yes-a gate resistor (typically 1.6 Ω, as used in datasheet switching tests) is required to control dV/dt and prevent oscillation during turn-on/turn-off. Without it, the low gate resistance (R_G = 0.9–1.2 Ω) and high C_iss (3700–4800 pF) can cause ringing, leading to false triggering or localized overheating at the gate edge.

Can IPTG063N15NM5 be used in parallel configurations?

Yes-the device features positive temperature coefficient for R_DS(on) (confirmed in Diagram 9), enabling stable current sharing across paralleled units. For best results, match gate drive loop inductance and PCB trace length, and ensure symmetric thermal mounting to maintain uniform junction temperature across all paralleled devices.

Is the body diode suitable for continuous conduction mode (CCM) operation?

Yes-the body diode is rated for 122 A continuous forward current (I_S) and has characterized reverse recovery parameters (Q_rr = 88–176 nC, t_rr = 63–127 ns). It supports CCM in synchronous buck or half-bridge topologies, though external Schottky may still be preferred in ultra-high-frequency (>500 kHz) designs to minimize recovery loss.

IPTG063N15NM5ATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 5

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 16.2A (Ta), 122A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 8V, 10V

Rds On (Max) @ Id, Vgs:: 6.3mOhm @ 50A, 10V

Vgs(th) (Max) @ Id:: 4.6V @ 163µA

Gate Charge (Qg) (Max) @ Vgs:: 63 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4800 pF @ 75 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 214W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8

IPTG063N15NM5ATMA1 FAQ

1.How can I place an order for IPTG063N15NM5ATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG063N15NM5ATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG063N15NM5ATMA1 reliable?

The price and inventory of IPTG063N15NM5ATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG063N15NM5ATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG063N15NM5ATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG063N15NM5ATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG063N15NM5ATMA1?

IPTG063N15NM5ATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG063N15NM5ATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG063N15NM5ATMA1?

For technical support, including IPTG063N15NM5ATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG063N15NM5ATMA1 requirements.

6.How does Aetrix verify that IPTG063N15NM5ATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG063N15NM5ATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG063N15NM5ATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG063N15NM5ATMA1?

All IPTG063N15NM5ATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG063N15NM5ATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG063N15NM5ATMA1 part is unused and in its original packaging.

Return procedure for IPTG063N15NM5ATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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