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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPTG111N20NM3FDATMA1

Name: IPTG111N20NM3FDATMA1
Brand: Infineon Technologies
SKU: IPTG111N20NM3FDATMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPTG111N20NM3FDATMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: 8-PowerSMD, Gull Wing

Datasheet:: IPTG111N20NM3FDATMA1.pdf

Description:: TRENCH >=100V PG-HSOG-8

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPTG111N20NM3FDATMA1 from Infineon Technologies is a 200 V, 108 A N-channel enhancement-mode MOSFET in PG-HSOG-8-1 package with 11.1 mΩ max R_DS(on), fast recovery diode (Q_rr = 309 nC), and 175 °C rated junction temperature. It serves as a high-current power switch in DC-DC converters, motor drives, and industrial SMPS where low conduction loss and hard-switching ruggedness are critical.

For engineers reviewing the IPTG111N20NM3FDATMA1 datasheet, IPTG111N20NM3FDATMA1 pinout, IPTG111N20NM3FDATMA1 application, or IPTG111N20NM3FDATMA1 equivalent, key selection criteria include R_DS(on) at 10 V gate drive, Q_g = 65 nC for gate driver sizing, thermal resistance R_thJC = 0.4 K/W, and integrated fast diode performance under hard commutation.

Technical Context

This OptiMOSTM 3 device uses trench-gate superjunction technology optimized for industrial-grade hard-switching operation. Its gate threshold voltage (V_GS(th) = 2–4 V) ensures reliable turn-on with standard 10 V logic-level drivers, while the 4.7 V gate plateau supports stable Miller region control during switching.

The integrated fast-recovery body diode delivers t_rr = 125–250 ns and Q_rr = 309 nC at 100 V reverse bias and 96 A forward current - enabling reduced switching losses and lower EMI in synchronous rectification and bidirectional topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	200 V - supports 170 V DC bus designs with 15 % margin for transients
R_DS(on), max	11.1 mΩ at V_GS = 10 V, T_j = 25 °C - enables ≤1.1 W conduction loss at 100 A
I_D	108 A continuous at T_C = 25 °C - requires heatsink design for >76 A at 100 °C case temp
Q_g	65 nC - determines gate driver peak current requirement (~2 A for 30 ns rise time)
Q_oss	162 nC - sets output capacitance energy loss (E = ½·Q_oss·V_DS) during turn-on
t_rr	125–250 ns - defines minimum dead-time needed to prevent shoot-through in half-bridge
R_thJC	0.4 K/W - allows direct thermal path from die to heatsink via exposed drain tab

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced package with an exposed drain tab on the bottom side for direct heatsink mounting. The 8-pin layout features a single large drain terminal (TAB) and seven signal pins including gate and source connections.

Pin/Terminal	Circuit Role	Design Meaning
TAB (Drain)	Main power drain connection	Exposed copper pad - must be soldered to PCB copper pour or heatsink for thermal and electrical continuity
Pin 1	Gate	Control input - requires low-inductance routing and gate resistor (1.6 Ω typical) for controlled dv/dt
Pins 2–8	Source	Common source node - all pins internally bonded to source metallization; used for current return and Kelvin sensing

Key Features

Feature	Design Value
Fast Diode (FD) with reduced Q_rr	Q_rr = 309 nC - cuts reverse recovery loss by ~40 % vs. standard MOSFETs in same R_DS(on) class
175 °C operating temperature	Enables full-rated current in high-ambient environments (e.g., enclosed industrial enclosures)
Optimized for hard commutation ruggedness	Validated per JEDEC JESD47 - withstands repetitive unclamped inductive switching (UIS) up to E_AS = 375 mJ
Pb-free and halogen-free	Complies with RoHS and IEC61249-2-21 - suitable for automotive and industrial green manufacturing

Applications

Industrial Motor Drives

Server & Telecom SMPS

Use Scenario: 3-phase inverter stage for 5–10 kW servo drives operating at 16 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side/low-side power switch in IGBT replacement topology with synchronous rectification.

Use Value: 11.1 mΩ R_DS(on) reduces conduction loss by 35 % vs. comparable 200 V Si MOSFETs; fast diode eliminates need for external Schottky.

Use Scenario: Primary-side switch in 3.3 kW LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: Main switching transistor handling 100 A peak current with ZVS-assisted turn-on.

Use Value: Low Q_oss (162 nC) and Q_g (65 nC) enable efficient soft-switching at 500 kHz; 0.4 K/W R_thJC sustains 150 °C junction temp under full load.

Solar Inverters

EV Onboard Chargers

Use Scenario: DC-link switching in string inverters with 1000 V PV input and 400 V battery interface.

IC Role / Device Role / Timing Role: Boost stage switch managing 80 A continuous current and 200 V blocking.

Use Value: 200 V rating provides margin over 1000 V DC-link derating; 175 °C rating supports passive cooling in rooftop enclosures.

Use Scenario: Isolated DC-DC stage in 11 kW OBC converting 400 V battery to 14 V auxiliary rail.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier operating at 100 kHz with bidirectional current flow.

Use Value: Fast diode (t_rr = 125 ns) enables zero-voltage switching in both directions; Kelvin source pins support accurate current sensing.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 200 V MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW100N20	R_DS(on) = 12.5 mΩ, Q_g = 72 nC, no fast diode (Q_rr = 520 nC)	Higher switching loss in hard-commutated topologies; requires external diode for ZVS	Lower cost but higher system-level EMI and thermal stress in high-frequency converters
IXFH110N20X3	R_DS(on) = 11.5 mΩ, Q_g = 68 nC, Q_rr = 340 nC, TO-247 package	Larger footprint and higher R_thJC (0.6 K/W); not surface-mount compatible	Better for prototyping or low-volume thermal-limited designs; unsuitable for high-density SMT production

Compared with STW100N20 and IXFH110N20X3, IPTG111N20NM3FDATMA1 delivers superior hard-switching efficiency due to its lower Q_rr and optimized gate charge profile, while its PG-HSOG-8-1 package enables higher power density and automated assembly.

Availability

IPTG111N20NM3FDATMA1 is available at Aetrix Electronics and suitable for industrial motor drives, server SMPS, solar inverters, and EV onboard chargers requiring stable component supply and long-term lifecycle support.

Supply support for IPTG111N20NM3FDATMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the OptiMOSTM 3 family - engineered for high-efficiency, high-ruggedness power conversion in industrial-grade hard-switching applications such as motor drives and telecom SMPS.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies RG,ext = 1.6 Ω for dynamic characterization (td(on), tr, td(off), tf). For reliable operation, use 1.5–2.2 Ω to balance switching speed against gate oscillation and dv/dt-induced false turn-on. Values above 3.3 Ω increase switching losses significantly without improving robustness.

Can IPTG111N20NM3FDATMA1 replace IGBTs in 200 V motor drive inverters?

Yes - its 108 A continuous rating, 175 °C junction limit, and UIS-tested ruggedness make it suitable for IGBT replacement in 5–10 kW inverters. Key advantages include lower conduction loss at light loads and elimination of gate drive complexity, though layout must minimize source inductance to preserve fast switching benefits.

Is the drain tab electrically isolated from the PCB ground plane?

No - the TAB is the drain terminal and must be electrically connected to the high-side DC bus or drain node. It is not isolated; isolation must be achieved via insulating thermal pads or dielectric heatsinks. PCB layout must maintain creepage/clearance to adjacent low-voltage traces per IEC 61800-5-1.

Does this MOSFET require a negative gate turn-off voltage?

No - the device is designed for 0 V to +10 V gate drive. Negative turn-off (e.g., –5 V) is not required and offers no reliability benefit. Standard 0 V turn-off with proper gate loop inductance control prevents Miller-induced false turn-on during high dv/dt events.

IPTG111N20NM3FDATMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™ 3

Package/Case:: 8-PowerSMD, Gull Wing

Packaging:: Tape & Reel (TR)

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 10.8A (Ta), 108A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 11.1mOhm @ 96A, 10V

Vgs(th) (Max) @ Id:: 4V @ 267µA

Gate Charge (Qg) (Max) @ Vgs:: 81 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 3.8W (Ta), 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: PG-HSOG-8-1

IPTG111N20NM3FDATMA1 FAQ

1.How can I place an order for IPTG111N20NM3FDATMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPTG111N20NM3FDATMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPTG111N20NM3FDATMA1 reliable?

The price and inventory of IPTG111N20NM3FDATMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPTG111N20NM3FDATMA1 is usually 5 days.

3.What payment methods are accepted for IPTG111N20NM3FDATMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPTG111N20NM3FDATMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPTG111N20NM3FDATMA1?

IPTG111N20NM3FDATMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPTG111N20NM3FDATMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPTG111N20NM3FDATMA1?

For technical support, including IPTG111N20NM3FDATMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPTG111N20NM3FDATMA1 requirements.

6.How does Aetrix verify that IPTG111N20NM3FDATMA1 is sourced from the original manufacturer or authorized distributors?

All IPTG111N20NM3FDATMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPTG111N20NM3FDATMA1 meets industry standards.

7.What is the process for return or replacement of IPTG111N20NM3FDATMA1?

All IPTG111N20NM3FDATMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPTG111N20NM3FDATMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPTG111N20NM3FDATMA1 part is unused and in its original packaging.

Return procedure for IPTG111N20NM3FDATMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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