Infineon Technologies IPTG210N25NM3FDATMA1

Overview

IPTG210N25NM3FD from Infineon Technologies is a 250 V, 77 A N-channel enhancement-mode MOSFET in PG-HSOG-8-1 package with integrated fast-recovery diode (FD), optimized for hard-switching industrial power converters. It delivers 21.0 mΩ max R_DS(on) at V_GS = 10 V, 144 nC Q_oss, and 175 °C maximum junction temperature-enabling high-efficiency 3–5 kW DC-DC and motor drive stages in UPS, solar inverters, and industrial SMPS.

For engineers reviewing the IPTG210N25NM3FD datasheet, IPTG210N25NM3FD pinout, IPTG210N25NM3FD application, or IPTG210N25NM3FD equivalent, key selection criteria include its FD-diode Q_rr reduction, rugged avalanche rating (610 mJ), thermal resistance (R_thJC = 0.2 K/W), and HSOG-8-1 drain-tab layout for high-current PCB mounting.

Technical Context

This OptiMOSTM 3 device uses trench-gate superjunction architecture to achieve low conduction loss while maintaining fast switching performance. Its gate charge profile (Q_g = 65 nC typ., Q_gd = 7.5–11.3 nC) supports efficient gate driving at 100–500 kHz in hard-commutated topologies.

The integrated fast diode features trr = 134–268 ns and Q_rr = 406 nC at 125 V/69 A, reducing switching losses and voltage overshoot during freewheeling. Thermal design leverages the exposed drain tab for direct heatsink attachment, enabling 375 W power dissipation at T_C = 25 °C.

Key Specifications

Pinout & Package

PG-HSOG-8-1 is a surface-mount, thermally enhanced package with an exposed drain tab (Pin 1) and 7-source terminals (Pins 2–8). The gate is isolated on Pin 1 side, enabling low-inductance gate loop routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET applications.

Compared with STW77N220F7 and IXFH77N25X3, IPTG210N25NM3FD uniquely combines FD diode integration, lowest Q_oss (144 nC), and best thermal resistance (0.2 K/W), making it optimal for space- and efficiency-constrained industrial converters where diode-related losses dominate system inefficiency.

Availability

IPTG210N25NM3FD is available at Aetrix Electronics and suitable for industrial UPS inverters, solar DC-DC boost converters, and motor drive phase-legs requiring stable component supply, long-lifecycle support, and traceable sourcing for production ramp.

Supply support for IPTG210N25NM3FD includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors-with over 30 years of MOSFET innovation and JEDEC-qualified industrial product validation.

This device belongs to the OptiMOSTM 3 family, engineered specifically for high-efficiency, high-ruggedness industrial power conversion-emphasizing low R_DS(on), fast diode integration, and thermal robustness in hard-switched topologies.

FAQ

What is the recommended gate resistor value for IPTG210N25NM3FD in a 200 kHz hard-switched buck converter?

Based on measured td(on) = 13 ns and tr = 13 ns with RG,ext = 1.6 Ω, a 2.2–3.3 Ω gate resistor is recommended for 200 kHz operation. This balances switching speed (minimizing overlap loss) and gate oscillation damping, especially given the device's 2.8–4.2 Ω internal gate resistance and low Crss (6–11 pF).

Can IPTG210N25NM3FD be used in parallel configurations? What layout considerations apply?

Yes-its Kelvin source pins (Pins 2–8) and matched R_DS(on) tolerance (±10 %) support paralleling. Critical layout practices include symmetrical gate trace lengths, individual gate resistors per device, and shared drain tab soldering with uniform thermal mass to avoid current imbalance above 100 A total.

How does the fast diode (FD) in IPTG210N25NM3FD differ from a standard body diode in terms of reverse recovery behavior?

The FD diode exhibits trr = 134–268 ns and Q_rr = 406 nC at 125 V/69 A-35–40 % lower Q_rr than standard silicon body diodes. This results in reduced diode-induced voltage overshoot (<15 V spike vs. >35 V) and lower EMI generation during freewheeling transitions in synchronous rectifiers.

Is the PG-HSOG-8-1 package compatible with standard reflow profiles for lead-free assembly?

Yes-the package is qualified for IPC/JEDEC J-STD-020D moisture sensitivity level 1 and supports peak reflow temperatures up to 260 °C. Full drain-tab solder coverage requires 8–10 s above 220 °C with controlled ramp rates (≤2 °C/s) to ensure void-free thermal interface formation.