Infineon Technologies IPU50R3K0CEBKMA1

Overview

IPU50R3K0CEBKMA1 from Infineon Technologies is a 500 V, 3.0 Ω R_DS(on) CoolMOS™ CE superjunction N-channel power MOSFET in PG-TO251 (IPAK) package, optimized for high-efficiency PFC and hard-switching SMPS stages in consumer lighting and adapter applications. It delivers 2.6 A continuous drain current at T_C = 25°C, 4.3 nC total gate charge, and 0.49 µJ output switching energy at 400 V.

For engineers reviewing the IPU50R3K0CEBKMA1 datasheet, IPU50R3K0CEBKMA1 pinout, IPU50R3K0CEBKMA1 application, or IPU50R3K0CEBKMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, low R_DS(on) × Q_g figure-of-merit, high commutation ruggedness (500 A/µs di/dt), and compatibility with standard gate drive voltages (V_GS(th) = 2.5–3.5 V).

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure enabling significantly lower conduction and switching losses than planar MOSFETs at 500 V. Its gate threshold voltage (2.5–3.5 V) ensures robust noise immunity while maintaining easy 10–15 V gate drive compatibility. The integrated body diode supports resonant topologies with 99 ns reverse recovery time and 0.3 µC Q_rr.

Thermal performance is defined by R_thJC = 4.85 °C/W and R_thJA = 62 °C/W on minimal PCB footprint. It operates across –55 to +150 °C junction temperature range and withstands single-pulse avalanche energy up to 18 mJ at T_j = 25°C.

Key Specifications

Pinout & Package

IPU50R3K0CEBKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain pad for thermal enhancement. The three-terminal configuration provides direct mechanical and thermal connection to PCB copper.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 500 V superjunction MOSFET applications.

Compared with IPD50R3K0CE, IPU50R3K0CEBKMA1 offers identical electrical performance in a smaller IPAK footprint ideal for space-constrained adapters; versus STP5NK50ZFP, it delivers 55% lower switching loss and 60% lower R_DS(on) × Q_g, enabling higher efficiency at 65–100 kHz without sacrificing ruggedness.

Availability

IPU50R3K0CEBKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC circuits, and universal AC/DC adapters requiring stable component supply, consistent parametric performance, and long-term industrial availability.

Supply support for IPU50R3K0CEBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices.

IPU50R3K0CEBKMA1 belongs to the CoolMOS™ CE product line-designed specifically for cost-sensitive, high-efficiency consumer and lighting applications where 500 V superjunction performance must be delivered at competitive pricing without compromising ease of use.

FAQ

Is IPU50R3K0CEBKMA1 pin-compatible with IPD50R3K0CE?

Yes-both share identical pinout (Gate-Drain-Source) and electrically equivalent die characteristics. However, IPU50R3K0CEBKMA1 uses PG-TO251 (IPAK) while IPD50R3K0CE uses PG-TO252 (DPAK); land patterns and thermal vias must be adjusted for the smaller IPAK footprint and different tab geometry.

What gate resistor value is recommended for 100 kHz operation?

A 5.3 Ω gate resistor is specified in the datasheet test conditions for dynamic characterization. For 100 kHz hard-switching, 4.7–6.8 Ω balances switching speed (reducing E_on/E_off) against ringing suppression; values below 4.7 Ω risk overshoot due to low gate resistance (6 Ω typ) and stray inductance.

Does this MOSFET require a gate driver with negative turn-off capability?

No-its gate threshold voltage (2.5–3.5 V) and 5.3 V gate plateau ensure stable turn-on with standard 10–15 V positive-only drivers. Negative turn-off is unnecessary; however, a 10–100 Ω pull-down resistor is recommended to prevent floating gate during controller reset or standby.

Can IPU50R3K0CEBKMA1 be paralleled for higher current?

Yes-but requires gate ferrite beads (or separate totem-pole drivers) per device to suppress oscillation and ensure current sharing. The datasheet explicitly recommends this for paralleling; mismatched layout inductance or thermal gradients will cause unequal current distribution above 2 A per device.