Infineon Technologies IPU50R950CEAKMA1

Overview

IPU50R950CEAKMA1 from Infineon Technologies is a 500 V, 6.6 A superjunction N-channel MOSFET in PG-TO251 (IPAK) package, featuring R_DS(on) = 0.95 Ω (max), Q_g = 10.5 nC (typ), and E_oss = 1.28 µJ at 400 V. It serves as a primary switch in hard-switched and resonant PFC and PWM stages for consumer power supplies including LCD TV and indoor lighting adapters.

For engineers reviewing the IPU50R950CEAKMA1 datasheet, IPU50R950CEAKMA1 pinout, IPU50R950CEAKMA1 application, or IPU50R950CEAKMA1 equivalent, key selection criteria include its 500 V V_(BR)DSS, low gate charge for high-frequency operation, robust commutation ruggedness (d_i/d_t = 500 A/µs), and thermal resistance of 2.35 °C/W (j–case).

Technical Context

This CoolMOS™ CE device implements a superjunction structure optimized for cost-sensitive, high-efficiency AC–DC conversion. Its gate threshold voltage (V_GS(th) = 2.5–3.5 V) enables standard 10–13 V gate drive compatibility, while low C_iss (231 pF) and C_oss (19 pF) support fast switching with reduced capacitive losses.

The integrated body diode exhibits t_rr = 140 ns and Q_rr = 0.7 µC at 400 V, supporting ZVS-capable topologies. Its 150 °C maximum junction temperature and 2.35 °C/W R_thJC allow stable operation under continuous conduction mode in compact SMD layouts.

Key Specifications

Pinout & Package

IPU50R950CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with gull-wing leads and exposed drain pad for thermal performance. The package measures 6.5 mm × 6.2 mm × 2.3 mm and is RoHS-compliant with halogen-free mold compound.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage MOSFET applications.

Compared with IPD50R950CE, IPU50R950CEAKMA1 offers identical electrical performance in a smaller IPAK footprint with superior R_thJA; versus STP5NK50ZFP, it delivers 35% lower conduction loss and 52% lower gate charge-critical for meeting CoC Tier 2 and ENERGY STAR 7.0 requirements.

Availability

IPU50R950CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silver box PFC modules, and consumer adapter designs requiring stable component supply, long-lifecycle availability, and consistent parametric performance across production batches.

Supply support for IPU50R950CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

IPU50R950CEAKMA1 belongs to the CoolMOS™ CE product line, engineered specifically for cost-sensitive, high-efficiency AC–DC conversion in consumer and lighting applications-balancing low R_DS(on), fast switching, and ease of use without sacrificing ruggedness.

FAQ

What is the maximum continuous drain current for IPU50R950CEAKMA1 at 100 °C case temperature?

The maximum continuous drain current is 4.2 A at T_C = 100 °C, limited by junction temperature not exceeding 150 °C under 50% duty cycle. This value is specified in Table 2 of the Rev. 2.3 datasheet and reflects thermal derating due to reduced heat transfer at elevated case temperatures.

Does IPU50R950CEAKMA1 require a gate resistor for stability in hard-switching applications?

Yes-a 5.3 Ω gate resistor is used in the datasheet's dynamic test conditions (Table 5) to limit peak gate current and suppress oscillation. For 100–300 kHz PFC operation, a 5–10 Ω non-inductive resistor is recommended to balance switching speed and EMI control without compromising dv/dt immunity.

Can IPU50R950CEAKMA1 be paralleled with identical units in high-power PFC designs?

Yes, but only with gate ferrite beads or separate totem-pole drivers per device to equalize gate loop inductance and prevent current imbalance. The datasheet explicitly recommends this in the Applications section for MOSFET paralleling, citing commutation mismatch risks above 3 kW.

Is the body diode of IPU50R950CEAKMA1 suitable for synchronous rectification in LLC converters?

No-the body diode is optimized for PFC commutation, not low-loss synchronous rectification. Its V_SD = 0.83 V and Q_rr = 0.7 µC are higher than dedicated SR MOSFETs; use a dedicated 100 V logic-level FET (e.g., IRF7832) for secondary-side synchronous rectification instead.