Infineon Technologies IPU60R2K0C6AKMA1

Overview

IPU60R2K0C6AKMA1 from Infineon Technologies is a 600 V, 2 Ω R_DS(on) CoolMOS™ C6 superjunction power MOSFET in IPAK (TO-251) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 6.7 nC total gate charge, 0.76 µJ output energy at 400 V, and 500 A/µs body diode di/dt, enabling compact, cool-running server power supplies and industrial adapters.

For engineers reviewing the IPU60R2K0C6AKMA1 datasheet, IPU60R2K0C6AKMA1 pinout, IPU60R2K0C6AKMA1 application, or IPU60R2K0C6AKMA1 equivalent, key selection criteria include its 650 V V_DS rating, 2.4 A continuous drain current at 25°C, 5.6 °C/W R_thJC, 30 ns turn-off delay, and industrial-grade JEDEC qualification.

Technical Context

This CoolMOS™ C6 device implements a superjunction structure to achieve ultra-low R_DS(on) × Q_g figure-of-merit and reduced E_oss, directly lowering conduction and switching losses in continuous conduction mode (CCM) PFC and fixed-frequency PWM converters. Its 5.4 V gate plateau voltage and 12 Ω gate resistance simplify drive design without external gate resistors in many cases.

The MOSFET features high commutation ruggedness with 500 A/µs body diode di/dt capability and 15 V/ns reverse diode dv/dt rating, supporting reliable operation in hard-switched topologies where reverse recovery stress is critical. Its 11 mJ single-pulse avalanche energy ensures robustness against transient overvoltage events.

Key Specifications

Pinout & Package

IPU60R2K0C6AKMA1 uses the PG-TO251 (IPAK) surface-mount package with gull-wing leads and exposed drain pad for thermal performance. The package measures 6.5 mm × 6.2 mm × 4.9 mm and is qualified for reflow soldering at 260°C (MSL 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPU60R2K0C6AKMA1, the IPU60R1K4C6AKMA1 trades higher gate charge for lower conduction loss-ideal for thermally limited 50–100 kHz adapters-while the IPU60R2K8C7AKMA1 reduces switching loss at high frequency but increases conduction loss, making it preferable for high-speed telecom rectifiers.

Availability

IPU60R2K0C6AKMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply, long-lifecycle support, and JEDEC-qualified reliability.

Supply support for IPU60R2K0C6AKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and R&D centers.

The CoolMOS™ C6 product line targets high-efficiency, high-reliability industrial and computing power conversion, delivering optimized trade-offs between switching speed, ruggedness, and ease of drive for PFC and hard-switched SMPS.

FAQ

What is the maximum continuous drain current for IPU60R2K0C6AKMA1 at 100°C case temperature?

The maximum continuous drain current is 1.5 A at T_C = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This rating is thermally limited by the 150°C maximum junction temperature and 5.6 °C/W junction-to-case thermal resistance. Derating follows a linear curve from 2.4 A at 25°C to zero at 150°C junction temperature.

Does IPU60R2K0C6AKMA1 require a negative gate voltage for reliable turn-off?

No. The device has a gate threshold voltage of 2.5–3.5 V and is fully enhanced at V_GS = 10 V. A gate drive voltage of 0 V is sufficient for turn-off; applying –5 V offers no functional benefit and is not recommended per Infineon's application notes. The gate oxide is rated for ±20 V static and ±30 V AC.

Can IPU60R2K0C6AKMA1 be used in synchronous rectification applications?

No. It is a standard N-channel enhancement-mode MOSFET designed for high-side switching, not bidirectional conduction. Its body diode is optimized for commutation-not forward conduction-and lacks the low V_SD (<0.5 V) and controlled Q_rr required for efficient synchronous rectification. Dedicated SR controllers with logic-level FETs are recommended instead.

What is the recommended PCB layout for thermal performance of the IPAK package?

Infineon specifies a 6 cm² copper area (70 µm thick) connected to the exposed drain pad on a 40 mm × 40 mm × 1.5 mm FR4 PCB, mounted vertically without forced airflow. Thermal vias (≥8 × 0.3 mm) under the pad are mandatory to transfer heat to inner or bottom layers. Source and gate traces must be kept short and wide to minimize inductance and ringing during switching.