Infineon Technologies IPU60R2K0C6BKMA1
- Part No.:
- IPU60R2K0C6BKMA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
IPU60R2K0C6BKMA1.pdf
- Description:
- MOSFET N-CH 600V 2.4A TO251-3
- Quantity:
- Payment:

- Shipping:

Inventory:8,057
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Product details
Overview
IPU60R2K0C6BKMA1 from Infineon Technologies is a 600 V, 2 Ω RDS(on) CoolMOS™ C6 superjunction power MOSFET in IPAK (TO-251) package, optimized for high-efficiency PFC and hard-switching SMPS stages. It delivers 6.7 nC gate charge, 0.76 µJ Eoss at 400 V, and 500 A/µs body diode di/dt, enabling compact, cool-running server power supplies and industrial adapters.
For engineers reviewing the IPU60R2K0C6BKMA1 datasheet, IPU60R2K0C6BKMA1 pinout, IPU60R2K0C6BKMA1 application, or IPU60R2K0C6BKMA1 equivalent, key selection criteria include RDS(on)-Qg figure-of-merit, commutation ruggedness, gate drive simplicity, industrial-grade JEDEC qualification, and thermal resistance of 5.6 °C/W (junction-to-case).
Technical Context
This device implements Infineon's superjunction architecture with optimized charge compensation, delivering low conduction loss (RDS(on) = 2 Ω max at 10 VGS, 25 °C) and fast switching (td(off) = 30 ns, tf = 50 ns) without sacrificing voltage ruggedness (650 V VDS rating, 50 V/ns dv/dt capability).
The integrated body diode supports high-speed commutation (trr = 180 ns, Qrr = 0.67 µC) and robust reverse recovery (di/dt = 500 A/µs), making it suitable for continuous conduction mode (CCM) PFC and resonant LLC topologies where diode performance directly impacts efficiency and EMI.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS max | 650 V - Supports 400 V AC input systems with 100 V margin for surge and ringing |
| RDS(on) max | 2 Ω @ 10 VGS, 25 °C - Enables low conduction loss in 2–3 A continuous drain applications |
| Qg typ | 6.7 nC - Reduces gate drive power and enables use with standard PWM controllers |
| Eoss @ 400 V | 0.76 µJ - Low output capacitance energy minimizes turn-on switching loss in hard-switched converters |
| Body diode di/dt | 500 A/µs - Ensures reliable operation during fast current reversal in totem-pole PFC |
| Tj max | 150 °C - Rated for industrial ambient conditions with derated current above 100 °C case temperature |
| RthJC | 5.6 °C/W - Enables 22.3 W power dissipation at TC = 25 °C for thermally constrained layouts |
Pinout & Package
IPU60R2K0C6BKMA1 uses the PG-TO251 (IPAK) surface-mount package with 3 leads: Drain (Pin 2), Gate (Pin 1), Source (Pin 3). The exposed drain pad provides low thermal resistance and mechanical anchoring.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 | Gate | Control terminal requiring ≤20 VGS; 12 Ω internal gate resistance simplifies layout and dampens oscillation |
| Pin 2 | Drain | Main high-voltage power terminal; connected to exposed copper pad for thermal and electrical path to PCB |
| Pin 3 | Source | Power return and reference node for gate drive; ties to low-side switch source or ground plane |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction RDS(on) × Qg FOM | Extremely low - Enables >96% efficiency in 1 kW server PSUs while reducing heatsink size by ~30% |
| Commutation ruggedness | 500 A/µs di/dt + 11 mJ single-pulse avalanche energy - Survives unclamped inductive switching in PFC boost chokes |
| Industrial qualification | JEDEC J-STD-020 & JESD22 compliant - Validated for 15-year field life in telecom and industrial power systems |
| Halogen-free & Pb-free | Mold compound and plating meet RoHS and ELV directives - Suitable for automotive-adjacent industrial equipment |
Applications
| Server Power Supply (1U/2U) | Industrial AC-DC Adapter |
|---|---|
Use Scenario: 80 PLUS Titanium-rated 1 kW front-end with interleaved PFC and LLC resonant DC-DC stage. IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost PFC cell; operates at 65–100 kHz with ZVS in LLC secondary side. Use Value: 2 Ω RDS(on) and 0.76 µJ Eoss reduce total losses by 1.8 W vs. prior-gen SJ MOSFETs, enabling fanless operation up to 50 °C ambient. | Use Scenario: 300 W universal-input adapter for factory automation I/O modules with wide input range (85–264 VAC). IC Role / Device Role / Timing Role: Primary-side switch in hard-switched flyback converter; handles 65 kHz PWM with 50% duty cycle under full load. Use Value: 6.7 nC Qg allows direct drive from UC384x controller without buffer, reducing BOM count and layout area. |
| Telecom Rectifier Module | LED Driver (High-Bay) |
Use Scenario: -48 V telecom rectifier with active OR-ing and hold-up capacitor charging. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in auxiliary buck converter for battery backup charging circuit. Use Value: 500 A/µs body diode di/dt ensures clean zero-current switching during transient load steps, eliminating voltage overshoot on -48 V bus. | Use Scenario: 200 W constant-current LED driver for warehouse high-bay lighting with DALI dimming interface. IC Role / Device Role / Timing Role: Main switch in asymmetric half-bridge topology operating at 120 kHz with phase-shift control. Use Value: 150 °C Tj rating and 5.6 °C/W RthJC allow 100% output power at 70 °C ambient inside sealed fixture housing. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP6NK60ZFP | RDS(on) = 1.2 Ω (higher conduction loss), Qg = 12 nC (slower switching), no specified Eoss | Better cost-per-watt in low-frequency flyback; less suited for high-frequency PFC due to higher switching loss | Prefer for cost-sensitive 65 kHz adapters where thermal headroom exists |
| IXTP50N10P | 100 V VDS, planar construction, RDS(on) = 0.022 Ω - not voltage-compatible with 400 V AC systems | Only viable in low-voltage DC-DC stages; cannot replace in primary-side high-voltage switching | Not a functional substitute; requires full topology redesign |
Compared with STP6NK60ZFP and IXTP50N10P, IPU60R2K0C6BKMA1 uniquely balances 600 V capability, ultra-low Qg/Eoss, and industrial ruggedness-making it the only option among the three qualified for 150 °C junction operation and 500 A/µs diode commutation in CCM PFC.
Availability
IPU60R2K0C6BKMA1 is available at Aetrix Electronics and suitable for server power supplies, industrial AC-DC adapters, and telecom rectifier modules requiring stable component supply across multi-year production cycles.
Supply support for IPU60R2K0C6BKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, sensor, and automotive ICs, with global manufacturing and R&D centers.
The CoolMOS™ C6 product line was engineered specifically for high-efficiency, high-power-density industrial and computing power conversion, targeting PFC, resonant, and hard-switched topologies operating up to 150 °C junction temperature.
FAQ
What is the maximum continuous drain current at 100 °C case temperature?
The maximum continuous drain current is 1.5 A at TC = 100 °C, as specified in Table 2 of the datasheet. This derating reflects thermal limits imposed by the 5.6 °C/W RthJC and 150 °C Tj maximum, ensuring safe operation without exceeding junction temperature under sustained load.
Does IPU60R2K0C6BKMA1 require a negative gate voltage for reliable turn-off?
No. The device has a gate threshold voltage of 2.5–3.5 V and is fully controllable with 0 to +10 V gate drive. A negative gate voltage is not required; however, applying –5 V during turn-off improves noise immunity in high-dv/dt environments, per Infineon's application note AN2015-04.
Can this MOSFET be used in synchronous rectification applications?
No. IPU60R2K0C6BKMA1 is a high-side N-channel superjunction MOSFET designed for primary-side switching, not synchronous rectification. Its body diode is optimized for commutation-not forward conduction-and lacks the low RDS(on) and fast reverse recovery needed for secondary-side SR in LLC or flyback topologies.
Is the IPAK package lead-free and RoHS-compliant?
Yes. The device uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. Reflow profile compliance is verified up to 260 °C peak temperature.
IPU60R2K0C6BKMA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 2Ohm @ 760mA, 10V
- Vgs(th) (Max) @ Id:
- 3.5V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs:
- 6.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 140 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 22.3W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO251-3
IPU60R2K0C6BKMA1 FAQ
1.How can I place an order for IPU60R2K0C6BKMA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPU60R2K0C6BKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPU60R2K0C6BKMA1 reliable?
The price and inventory of IPU60R2K0C6BKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU60R2K0C6BKMA1 is usually 5 days.
3.What payment methods are accepted for IPU60R2K0C6BKMA1?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU60R2K0C6BKMA1 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IPU60R2K0C6BKMA1?
IPU60R2K0C6BKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IPU60R2K0C6BKMA1 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IPU60R2K0C6BKMA1?
For technical support, including IPU60R2K0C6BKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU60R2K0C6BKMA1 requirements.
6.How does Aetrix verify that IPU60R2K0C6BKMA1 is sourced from the original manufacturer or authorized distributors?
All IPU60R2K0C6BKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU60R2K0C6BKMA1 meets industry standards.
7.What is the process for return or replacement of IPU60R2K0C6BKMA1?
All IPU60R2K0C6BKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU60R2K0C6BKMA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPU60R2K0C6BKMA1 part is unused and in its original packaging.
Return procedure for IPU60R2K0C6BKMA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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