Infineon Technologies IPU60R2K1CEAKMA1

Overview

IPU60R2K1CEAKMA1 from Infineon Technologies is a 600 V, 2.1 Ω (max), 3.7 A continuous drain current CoolMOS™ CE superjunction power MOSFET in PG-TO251 (IPAK) package with drain-connected tab, gate on pin 1, and source on pin 3 - designed for high-efficiency PFC and hard-switching PWM stages in consumer lighting and adapter power supplies.

For engineers reviewing the IPU60R2K1CEAKMA1 datasheet, IPU60R2K1CEAKMA1 pinout, IPU60R2K1CEAKMA1 application, or IPU60R2K1CEAKMA1 equivalent, key selection criteria include its 6.7 nC total gate charge, 0.76 µJ output switching energy at 400 V, 50 V/ns dv/dt ruggedness, and 150 °C max junction temperature - all critical for stable operation in compact, thermally constrained AC-DC converters.

Technical Context

This CoolMOS™ CE device implements a superjunction cell structure optimized for cost-sensitive, high-efficiency 600 V applications. It delivers low conduction loss via 2.1 Ω R_DS(on) (max) at 10 V_GS, and fast switching with 7 ns turn-on delay and 50 ns fall time under 400 V/0.9 A test conditions.

The MOSFET integrates a robust body diode with 180 ns reverse recovery time and 7.1 A peak reverse recovery current, enabling reliable operation in discontinuous conduction mode (DCM) PFC and resonant topologies without external snubbing in many cases.

Key Specifications

Pinout & Package

IPU60R2K1CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain-connected copper tab for thermal conduction. Pin 1 is Gate, Pin 2 is Drain (tab-connected), and Pin 3 is Source.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Compared with IPD60R2K1CE and STP60N2K2, IPU60R2K1CEAKMA1 offers superior dv/dt immunity and lower E_oss, making it preferred for compact, high-reliability consumer power supplies where thermal headroom and EMI control are constrained.

Availability

IPU60R2K1CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC-DC adapter primary switches, and LCD TV backlight PFC circuits requiring stable component supply across multi-year production cycles.

Supply support for IPU60R2K1CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power, sensor, and automotive ICs, with leadership in silicon and wide-bandgap power devices since 1999.

This part belongs to the CoolMOS™ CE family - engineered for cost-optimized, high-efficiency 600 V switching in consumer and general-purpose lighting applications where performance must meet stringent energy regulations without premium pricing.

FAQ

What is the maximum recommended gate resistor value for IPU60R2K1CEAKMA1 in a 100 kHz flyback?

A 12.2 Ω gate resistor was used in the official datasheet switching characterization (td(on)=7 ns, tf=50 ns). For 100 kHz operation, 10–15 Ω balances switching loss reduction and EMI control. Lower values increase peak gate current and risk ringing; higher values extend switching times and raise conduction loss proportionally.

Can IPU60R2K1CEAKMA1 replace IPD60R2K1CE in an existing DPAK layout?

No - IPU60R2K1CEAKMA1 uses PG-TO251 (IPAK) with leaded pins and top-side drain tab, while IPD60R2K1CE uses PG-TO252 (DPAK) with bottom-side drain tab. Footprint, thermal pad placement, and solder stencil design differ significantly; mechanical redesign is required for substitution.

Does this MOSFET require a gate driver IC, or can it be driven directly from a microcontroller GPIO?

Direct GPIO drive is not recommended. With 6.7 nC Q_g, driving from a 20 mA GPIO would require >335 ns to fully charge the gate - causing excessive heating and unreliable turn-on. A dedicated gate driver (e.g., 1 A peak, 12 V supply) is required for stable 65–100 kHz operation.

What is the safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA curve (Figure 3 in datasheet) limits continuous operation to ≤1.8 A at 400 V, or ≤3.2 A at 200 V. Pulse operation up to 6 A is allowed for ≤100 µs at this temperature, provided peak power does not exceed 38 W and transient thermal impedance remains within Z_thJC limits.