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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPU60R2K1CEBKMA1

Name: IPU60R2K1CEBKMA1
Brand: Infineon Technologies
SKU: IPU60R2K1CEBKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPU60R2K1CEBKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-251-3 Short Leads, IPAK, TO-251AA

Datasheet:: IPU60R2K1CEBKMA1.pdf

Description:: MOSFET N-CH 600V 2.3A TO251-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPU60R2K1CEBKMA1 from Infineon Technologies is a 600 V, 2.1 Ω (max) superjunction MOSFET in PG-TO251 (IPAK) package, optimized for cost-sensitive PFC and hard-switching SMPS stages in lighting and adapter applications. It delivers 3.7 A continuous drain current at 25°C, features 6.7 nC total gate charge, and integrates a fast-recovery body diode with 180 ns trr and 0.67 µC Qrr.

For engineers reviewing the IPU60R2K1CEBKMA1 datasheet, IPU60R2K1CEBKMA1 pinout, IPU60R2K1CEBKMA1 application, or IPU60R2K1CEBKMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss at 400 V (0.76 µJ), dv/dt ruggedness (50 V/ns), and gate drive simplicity enabled by 5.4 V plateau voltage and low Q_gd/Q_g ratio.

Technical Context

This CoolMOS™ CE device employs superjunction architecture to achieve ultra-low figure-of-merit (R_DS(on) × Q_g = 14.07 Ω·nC typ) while maintaining high commutation ruggedness-evidenced by 11 mJ single-pulse avalanche energy and 500 A/µs diode dif/dt rating. Its 600 V V_(BR)DSS and 150 °C max junction temperature support operation in high-voltage, thermally constrained environments.

The MOSFET exhibits strong temperature coefficient linearity in R_DS(on), rising from ~1.8 Ω at 25°C to ~4.68 Ω at 150°C, enabling predictable thermal derating. Gate threshold voltage (2.5–3.5 V) and low 12 Ω gate resistance simplify drive circuit design without requiring negative turn-off bias.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Ensures 50 V margin above 600 V rated breakdown, supporting reliable operation under transient overvoltage in offline SMPS.
R_DS(on) max	2.10 Ω @ T_j = 150°C - Defines worst-case conduction loss in thermally saturated PFC boost stages.
Q_g typ	6.7 nC - Enables efficient 100 kHz–300 kHz switching with standard gate drivers (e.g., 1 A peak output).
E_oss @ 400 V	0.76 µJ - Directly determines turn-on switching loss in hard-switched topologies; lower than legacy SJ-MOSFETs.
dv/dt ruggedness	50 V/ns - Allows stable operation without external snubbers in high-dV/dt resonant or phase-shifted full-bridge circuits.
trr / Q_rr	180 ns / 0.67 µC - Minimizes reverse recovery losses and EMI generation during diode commutation in LLC and QR flyback.

Pinout & Package

IPU60R2K1CEBKMA1 is housed in PG-TO251 (IPAK) package with exposed drain tab for enhanced thermal performance. The leadframe design supports PCB-mount thermal relief and direct heatsinking via the tab.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal; accepts 10 V logic-level drive; 12 Ω internal gate resistance reduces ringing risk.
Pin 2 (Drain)	High-side power node	Connected to internal die drain and exposed metal tab; must be electrically isolated from heatsink unless referenced to same potential.
Pin 3 (Source)	Reference return path	Serves as signal ground reference for gate drive and current sensing; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Superjunction FOM (R_DS(on) × Q_g)	14.07 Ω·nC typ - Reduces combined conduction + switching loss in 65–100 kHz PFC, improving efficiency >95% at full load.
Body diode commutation ruggedness	500 A/µs dif/dt rating - Supports zero-voltage switching transitions without oscillation or failure in resonant converters.
Thermal resistance R_thJC	3.26 °C/W - Enables 38 W power dissipation at T_C = 25°C; allows compact heatsink design in space-constrained adapters.
Pb-free & halogen-free construction	RoHS-compliant plating and mold compound - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) for reflow compatibility.

Applications

LED Driver Power Stage

PC Silverbox PFC Boost

Use Scenario: Constant-current LED driver operating from universal AC input (85–265 VAC) with active PFC and quasi-resonant flyback.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in boost PFC pre-regulator stage; handles 600 V DC bus and 100 kHz switching.

Use Value: Low E_oss (0.76 µJ) and fast diode (trr = 180 ns) reduce switching loss and audible noise compared to standard SJ-MOSFETs.

Use Scenario: Active PFC front-end in desktop PC power supplies delivering 300–500 W with THD <5% at full load.

IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) boost switch handling 400 V DC link and 65 kHz operation.

Use Value: 2.1 Ω R_DS(on) at 150°C ensures stable thermal performance across ambient temperatures up to 70°C without derating.

LCD TV Backlight Inverter

USB-C PD Adapter Primary Switch

Use Scenario: High-efficiency flyback converter powering CCFL or LED backlight in 32–55″ LCD TVs with wide input range (90–264 VAC).

IC Role / Device Role / Timing Role: Primary-side switching transistor in quasi-resonant (QR) topology; operates at variable frequency up to 130 kHz.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering during high-slew-rate transitions, eliminating need for gate clamping networks.

Use Scenario: 65 W USB-C Power Delivery adapter using active clamp flyback or asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: Main primary-side switch handling 600 V blocking and 100–200 kHz switching with tight duty cycle control.

Use Value: Low Q_gd/Q_g ratio (3.6/6.7 ≈ 54%) improves controllability during transition between CCM and DCM, enhancing light-load efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPD60R2K1CE	Same die, PG-TO252 (DPAK) package; R_thJC = 3.26 °C/W identical, but larger footprint and higher R_thJA (62 °C/W vs. 62 °C/W - same value, different test condition).	Preferred where board space permits larger DPAK and thermal vias are limited; less suitable for ultra-thin adapter PCBs.	Select IPD60R2K1CE when mechanical mounting constraints favor DPAK's dual leads and higher creepage distance.
STP60N2K2	600 V, 2.2 Ω R_DS(on), 7.2 nC Q_g, TO-220 package; lacks Co(er) specification and has higher E_oss (1.1 µJ @ 400 V).	Used in industrial SMPS where cost is prioritized over efficiency; not recommended for consumer-grade lighting due to higher thermal impedance.	Choose STP60N2K2 only if legacy TO-220 socket compatibility is mandatory and efficiency targets allow ≥0.3% penalty at full load.

Compared with IPD60R2K1CE, IPU60R2K1CEBKMA1 offers identical electrical specs in a smaller IPAK footprint ideal for space-constrained designs, while STP60N2K2 trades efficiency for broader legacy compatibility but requires larger heatsinking due to TO-220 thermal limitations.

Availability

IPU60R2K1CEBKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, PC silverbox PFC boost circuits, and LCD TV backlight inverters requiring stable component supply, long-term lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IPU60R2K1CEBKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and RF solutions, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

This part belongs to the CoolMOS™ CE family-a cost-optimized superjunction platform targeting high-efficiency, high-volume consumer and lighting power supplies where price-performance balance is critical.

FAQ

Is IPU60R2K1CEBKMA1 pin-compatible with IPD60R2K1CE?

No. While both share identical die characteristics, IPU60R2K1CEBKMA1 uses PG-TO251 (IPAK) with 3-pin single-leaded configuration (G-D-S), whereas IPD60R2K1CE uses PG-TO252 (DPAK) with 3-pin dual-leaded layout (G-S-D). Footprint and solder pad geometry differ, requiring PCB redesign for substitution.

What gate resistor value is recommended for 100 kHz operation?

A 10 Ω series gate resistor is recommended for 100 kHz hard-switching operation. This value balances switching speed (reducing turn-on delay to ~7 ns and fall time to ~50 ns) against gate ringing, leveraging the device's 12 Ω intrinsic gate resistance and 5.4 V gate plateau to ensure clean Miller region crossing.

Can this MOSFET be paralleled for higher current capability?

Yes, but with precautions: use individual ferrite beads (≥100 Ω @ 100 MHz) on each gate line and separate totem-pole drivers to prevent dynamic current imbalance. The device's positive R_DS(on) temperature coefficient supports thermal sharing, but layout symmetry is critical to avoid oscillation.

Does the body diode support ZVS in LLC resonant converters?

Yes-the 180 ns reverse recovery time and 0.67 µC Q_rr enable reliable zero-voltage switching in LLC half-bridge topologies operating up to 500 kHz. However, soft-start sequencing must ensure diode conduction before main switch turn-on to avoid hard commutation stress.

IPU60R2K1CEBKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CE

Package/Case:: TO-251-3 Short Leads, IPAK, TO-251AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 2.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.1Ohm @ 760mA, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 60µA

Gate Charge (Qg) (Max) @ Vgs:: 6.7 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 140 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 22W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO251-3

IPU60R2K1CEBKMA1 FAQ

1.How can I place an order for IPU60R2K1CEBKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPU60R2K1CEBKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPU60R2K1CEBKMA1 reliable?

The price and inventory of IPU60R2K1CEBKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPU60R2K1CEBKMA1 is usually 5 days.

3.What payment methods are accepted for IPU60R2K1CEBKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPU60R2K1CEBKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPU60R2K1CEBKMA1?

IPU60R2K1CEBKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPU60R2K1CEBKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPU60R2K1CEBKMA1?

For technical support, including IPU60R2K1CEBKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPU60R2K1CEBKMA1 requirements.

6.How does Aetrix verify that IPU60R2K1CEBKMA1 is sourced from the original manufacturer or authorized distributors?

All IPU60R2K1CEBKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPU60R2K1CEBKMA1 meets industry standards.

7.What is the process for return or replacement of IPU60R2K1CEBKMA1?

All IPU60R2K1CEBKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPU60R2K1CEBKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPU60R2K1CEBKMA1 part is unused and in its original packaging.

Return procedure for IPU60R2K1CEBKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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