Infineon Technologies IPU60R3K4CEAKMA1

Overview

IPU60R3K4CEAKMA1 from Infineon Technologies is a 600 V, 3.4 Ω (max), 2.6 A continuous drain current CoolMOS™ CE superjunction MOSFET in PG-TO251 (IPAK) package, featuring 4.6 nC total gate charge and 0.57 µJ output energy at 400 V. It serves as a high-voltage switching device in PFC and hard-switching SMPS stages for consumer lighting and adapter applications.

For engineers reviewing the IPU60R3K4CEAKMA1 datasheet, IPU60R3K4CEAKMA1 pinout, IPU60R3K4CEAKMA1 application, or IPU60R3K4CEAKMA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss-driven switching loss trade-offs, commutation ruggedness under hard-switching conditions, and gate drive simplicity in cost-sensitive AC/DC designs.

Technical Context

This CoolMOS™ CE device implements a superjunction structure optimized for low FOM (R_DS(on) × Q_g = 15.6 Ω·nC typ) and low E_oss (0.57 µJ @ 400 V), enabling high efficiency in discontinuous and critical conduction mode PFC. Its 5.4 V gate plateau voltage and 15 Ω intrinsic gate resistance simplify gate driver design without external damping.

It delivers 6 mJ single-pulse avalanche energy and supports 50 V/ns dv/dt ruggedness in low-side configurations. The integrated body diode exhibits 160 ns reverse recovery time and 0.42 µC Q_rr, suitable for non-synchronous rectification in resonant topologies where diode commutation speed matters.

Key Specifications

Pinout & Package

IPU60R3K4CEAKMA1 uses the PG-TO251 (IPAK) surface-mount package with exposed drain tab for thermal enhancement. The package measures 6.5 mm × 3.5 mm × 1.7 mm and features gull-wing leads compatible with standard reflow profiles (MSL1, 260 °C peak).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage switching applications.

Compared with STP6NK60ZFP and FDPF18N50, IPU60R3K4CEAKMA1 offers superior R_DS(on) × Q_g FOM and smaller IPAK footprint, delivering higher power density and lower system-level thermal overhead in universal-input consumer power supplies.

Availability

IPU60R3K4CEAKMA1 is available at Aetrix Electronics and suitable for LED driver power stages, AC/DC adapter PFC circuits, and smart home power supplies requiring stable component supply and long-term industrial availability.

Supply support for IPU60R3K4CEAKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global R&D and wafer fabrication facilities.

This part belongs to the CoolMOS™ CE product line-designed specifically for cost-sensitive, high-efficiency consumer and lighting power conversion applications where performance-per-dollar and ease of implementation are critical.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

The datasheet specifies 20 Ω external gate resistor for characterization (td(on)/td(off) test conditions). For stable operation with minimal overshoot, a 10–15 Ω series resistor is recommended when driving directly from a 5 V logic-level controller. Values above 22 Ω increase switching time and conduction loss; below 5 Ω may cause ringing due to PCB inductance interacting with the device's 15 Ω internal RG.

Can IPU60R3K4CEAKMA1 be used in parallel configurations?

Yes, but only with gate ferrite beads (e.g., 100 Ω @ 100 MHz) on each gate line or individual totem-pole drivers to suppress oscillation. Parallel operation requires matched PCB trace lengths, symmetric thermal mounting, and current-sharing resistors (0.1–0.22 Ω) in source lines to compensate for R_DS(on) tolerance (±20 %) and thermal drift.

Does this MOSFET require a negative gate turn-off voltage?

No. The device is fully specified for 0 V to +10 V or +13 V gate drive. Negative turn-off voltage is not required or recommended-the datasheet confirms stable operation with V_GS = 0 V during off-state, and IGSS remains < 100 nA at V_GS = –20 V. Applying negative voltage adds complexity without reliability benefit.

What is the thermal resistance from junction to case (R_thJC) and how should it be applied in layout?

R_thJC is 4.26 °C/W, measured from die to the exposed drain tab. To achieve this value, the PCB must provide ≥6 cm² of 70 µm-thick copper connected directly to the tab via ≥4 thermal vias (0.3 mm diameter, 0.8 mm pitch). Without this copper area, R_thJA degrades to 45 °C/W, limiting continuous current to ~1.3 A at 85 °C ambient.