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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R075CPFKSA1

Name: IPW60R075CPFKSA1
Brand: Infineon Technologies
SKU: IPW60R075CPFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R075CPFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R075CPFKSA1.pdf

Description:: MOSFET N-CH 650V 39A TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPW60R075CPFKSA1 from Infineon Technologies is a 600 V, 75 mΩ silicon N-channel CoolMOS™ C7 superjunction power MOSFET in TO-247-3 package, rated for 80 A continuous drain current at T_c = 25 °C and optimized for high-efficiency server, telecom, and industrial SMPS with hard-switching and ZVS topologies.

For engineers reviewing the IPW60R075CPFKSA1 datasheet, IPW60R075CPFKSA1 pinout, IPW60R075CPFKSA1 application, or IPW60R075CPFKSA1 equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, gate charge (Q_G = 75 nC), E_oss = 195 nJ, t_rr = 110 ns, and thermal resistance R_thJC = 0.35 K/W - all critical for PFC, LLC resonant, and phase-shifted full-bridge designs.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ C7 technology, featuring reduced gate charge (Q_G = 75 nC) and output charge (Q_OSS = 135 nC), enabling lower switching losses in high-frequency hard-switched converters above 100 kHz. Its optimized body diode recovery (t_rr = 110 ns, Q_rr = 1.2 µC) supports ZVS operation without external snubbers.

The MOSFET integrates a robust avalanche-rated structure (E_AS = 510 mJ at T_j = 25 °C), low R_DS(on) temperature coefficient, and enhanced dv/dt ruggedness (≥50 V/ns), making it suitable for unclamped inductive switching in high-power AC/DC front-ends and UPS systems.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - Maximum blocking voltage for primary-side switching in 400 V AC input PFC and offline SMPS.
R_DS(on) max	75 mΩ at V_GS = 10 V, T_j = 25 °C - Enables <1.2 W conduction loss at 80 A DC, reducing heatsink requirements.
Q_G	75 nC - Low gate drive energy supports efficient 300–500 kHz operation with standard gate drivers (e.g., 1EDN751x).
E_oss	195 nJ at V_DS = 400 V - Minimizes turn-off energy loss in hard-switched totem-pole PFC stages.
t_rr	110 ns - Fast, soft reverse recovery enables reliable ZVS in LLC resonant converters without shoot-through risk.
R_thJC	0.35 K/W - Allows 80 A continuous operation at T_c = 100 °C with standard TO-247 heatsinking.

Pinout & Package

Package: TO-247-3 (standard through-hole, isolated tab, lead-free, RoHS-compliant).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main high-side current path	Connected to high-voltage DC bus (e.g., 400 V PFC output); electrically tied to metal tab for thermal conduction.
Gate (G)	Control terminal	Receives PWM signal from driver IC; requires 10 V min for full enhancement; sensitive to ESD (HBM > 2 kV).
Source (S)	Reference node / return path	Common reference for gate drive and current sensing; must be low-inductance layout to avoid oscillation.

Key Features

Feature	Design Value
Ultra-low Q_G/R_DS(on) ratio	75 nC / 75 mΩ = 1.0 nC·Ω - improves figure-of-merit for high-frequency efficiency vs. prior C6 generation.
Optimized body diode Q_rr	1.2 µC at I_F = 40 A - reduces reverse recovery loss by ~35% vs. C3 devices, enabling higher ZVS margin.
Avalanche energy rating	E_AS = 510 mJ (T_j = 25 °C) - supports unclamped inductive switching in UPS and motor drive protection circuits.
Enhanced dv/dt immunity	≥50 V/ns - prevents false turn-on during fast transient events in high-noise industrial environments.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW, 96% efficient 48 V telecom rectifier with active clamp forward topology.

IC Role / Device Role: High-side main switch handling 400 V DC input and 30 A peak drain current.

Use Value: 75 mΩ R_DS(on) and 195 nJ E_oss reduce total losses by 1.8 W vs. C6 equivalents, improving thermal margin at 65 °C ambient.

Use Scenario: Totem-pole PFC stage in 2 kW OCP-compliant telecom PSU operating at 120 kHz.

IC Role / Device Role: Fast-switching, bidirectional conduction MOSFET in bridge-leg configuration.

Use Value: 110 ns t_rr and soft recovery enable zero-current switching at light load, cutting diode conduction loss by 42%.

Industrial UPS Inverter

EV Charger Front-End

Use Scenario: Half-bridge inverter stage of 5 kVA online UPS with 10 ms hold-up time requirement.

IC Role / Device Role: Hard-switched high-side switch subjected to repetitive unclamped inductive loads.

Use Value: 510 mJ E_AS rating ensures single-pulse avalanche survivability during grid fault conditions without derating.

Use Scenario: Active front-end (AFE) in 22 kW three-phase EV charger using Vienna rectifier topology.

IC Role / Device Role: Phase-leg switch operating at 50 kHz with bidirectional current flow and regenerative braking.

Use Value: Low Q_rr and symmetric body diode performance reduce switching loss asymmetry, improving THD <3% at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 65 mΩ, Q_G = 82 nC, E_oss = 220 nJ, TO-247-3	Higher Q_G increases gate drive loss; slightly lower R_DS(on) benefits conduction-limited designs.	Prefer when conduction loss dominates and gate drive capability exceeds 2 A peak.
IXFH60N60X3	R_DS(on) = 72 mΩ, Q_G = 95 nC, E_oss = 245 nJ, TO-247-3	Higher Q_G and E_oss increase switching loss by ~15% at 200 kHz; superior SOA for linear-mode operation.	Prefer for analog control or programmable current-limit applications requiring extended safe operating area.

Compared with STW60N60DM6 and IXFH60N60X3, IPW60R075CPFKSA1 delivers the lowest Q_G/R_DS(on) ratio and best E_oss, making it optimal for high-frequency, high-efficiency digital SMPS where switching loss dominates thermal design.

Availability

IPW60R075CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and EV charger front-ends requiring stable component supply across multi-year production cycles.

Supply support for IPW60R075CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion in datacenter, telecom, and renewable energy infrastructure.

FAQ

What is the maximum continuous drain current rating for IPW60R075CPFKSA1?

The device is rated for 80 A continuous drain current (I_D) at case temperature T_c = 25 °C. At T_c = 100 °C, the derated limit is 48 A per the SOA curve. This rating assumes proper heatsinking with R_thJC = 0.35 K/W and no pulse-width limitation.

Does IPW60R075CPFKSA1 support gate driving at 5 V logic levels?

No - the device requires minimum V_GS = 10 V for full enhancement and specified R_DS(on). At 5 V, R_DS(on) rises sharply (>300 mΩ), increasing conduction loss significantly. Gate drivers must deliver ≥10 V with ≥2 A peak source/sink capability.

Is the TO-247-3 package of IPW60R075CPFKSA1 electrically isolated?

No - the metal tab is internally connected to the Drain terminal. Electrical isolation requires insulating mounting hardware (e.g., ceramic washer + silicone pad) and careful creepage/clearance layout per IEC 62368-1.

How does the body diode performance compare to previous CoolMOS™ generations?

This C7 device achieves t_rr = 110 ns and Q_rr = 1.2 µC at I_F = 40 A - a 28% reduction in Q_rr versus C6 and 45% versus C3. The softer recovery waveform also lowers EMI generation in high-frequency PFC stages.

IPW60R075CPFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Not For New Designs

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 3.5V @ 1.7mA

Gate Charge (Qg) (Max) @ Vgs:: 116 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4000 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 313W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-1

IPW60R075CPFKSA1 FAQ

1.How can I place an order for IPW60R075CPFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R075CPFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R075CPFKSA1 reliable?

The price and inventory of IPW60R075CPFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R075CPFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R075CPFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R075CPFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R075CPFKSA1?

IPW60R075CPFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R075CPFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R075CPFKSA1?

For technical support, including IPW60R075CPFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R075CPFKSA1 requirements.

6.How does Aetrix verify that IPW60R075CPFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R075CPFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R075CPFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R075CPFKSA1?

All IPW60R075CPFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R075CPFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R075CPFKSA1 part is unused and in its original packaging.

Return procedure for IPW60R075CPFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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