Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R090CFD7XKSA1

Name: IPW60R090CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW60R090CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW60R090CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R090CFD7XKSA1.pdf

Description:: MOSFET N-CH 600V 25A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:238

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW60R090CFD7XKSA1 from Infineon is a 600 V, 90 mΩ superjunction MOSFET with integrated ultrafast body diode, designed for primary-side switching in resonant LLC and ZVS phase-shift full-bridge topologies. Confirmed parameters: R_DS(on) max = 90 mΩ, V_DS = 600 V, Q_g = 54 nC, Q_rr = 125 nC, t_rr = 110 ns. Used in 2–3 kW server PSUs and EV charging stations.

For engineers reviewing the IPW60R090CFD7XKSA1 datasheet, IPW60R090CFD7XKSA1 pinout, IPW60R090CFD7XKSA1 application, or IPW60R090CFD7XKSA1 equivalent, key selection criteria include reverse recovery charge (Q_rr), gate charge (Q_g), R_DS(on) × Q_g figure-of-merit, hard commutation ruggedness, and TO-247 package thermal performance in high-frequency soft-switching designs.

Technical Context

The device implements CoolMOS™ CFD7 technology - a silicon-based superjunction structure with optimized charge compensation and integrated fast-recovery body diode. It delivers Q_rr as low as 125 nC and t_rr of 110 ns, enabling reliable zero-voltage switching at >300 kHz in LLC converters.

Its R_DS(on) × Q_g FOM of 4.86 Ω·nC and E_oss of 32 nJ support high-efficiency operation while maintaining robust dv/dt and di/dt ruggedness during hard commutation events typical in phase-shifted full-bridge circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - supports 400 V DC bus with 50% margin for transient overvoltage in telecom/server SMPS
R_DS(on) max	90 mΩ at T_j = 100 °C - enables <2.5 W conduction loss at 5 A RMS in 2 kW LLC primary
Q_g	54 nC - reduces gate drive power and allows use of lower-cost 2EDN EiceDRIVER™ ICs
Q_rr	125 nC - 69% lower than comparable 190 mΩ competition, cutting diode-related switching loss by >40%
t_rr	110 ns - lowest published trr in 600 V superjunction class, minimizing voltage overshoot during turn-on
E_oss	32 nJ - lowers capacitive turn-on loss in ZVS operation above 250 kHz
FOM (R_DS(on) × Q_g)	4.86 Ω·nC - best-in-class trade-off between conduction and switching loss for 2–3 kW density targets

Pinout & Package

IPW60R090CFD7XKSA1 uses TO-247-3L package: isolated tab, standard lead pitch, 3.5 mm creepage, 125 °C maximum junction temperature rating, and 1.5 K/W typical R_thJC.

Pin/Terminal	Circuit Role	Design Meaning
DRAIN	High-voltage power output terminal	Connected to primary winding of LLC transformer; handles 600 V blocking and 15 A peak current
GATE	Control input	Receives PWM signal from gate driver; requires 10–15 V drive with <1 Ω source impedance for clean 110 ns t_rr-enabled turn-off
SOURCE	Power return and reference node	Common node for gate driver ground, current sense resistor, and half-bridge low-side reference; critical for dv/dt noise immunity

Key Features

Feature	Design Value
Ultrafast body diode	Q_rr = 125 nC and t_rr = 110 ns - eliminates need for external SiC Schottky anti-parallel diode in LLC
Lowest R_DS(on) × Q_g FOM	4.86 Ω·nC - enables >96.5% full-load efficiency in 3 kW ZVS designs without forced air
Hard commutation ruggedness	Rated for 100% I_D single-pulse avalanche energy (E_AS) - sustains repeated line transients in telecom rectifier stages
Optimized for LLC/ZVS	Guaranteed t_rr stability across -40 to 150 °C - ensures consistent zero-voltage turn-on timing over full operating range

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 2 kW redundant AC/DC front-end in hyperscale data center rack PSUs.

IC Role / Device Role / Timing Role: Primary-side synchronous switch in asymmetric half-bridge LLC resonant converter operating at 300–500 kHz.

Use Value: 1.45% higher full-load efficiency vs. prior-gen CFD2, reducing cooling requirements and enabling 2U form factor.

Use Scenario: 3 kW -48 V telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology with ZVS at light load.

Use Value: 0.79% efficiency gain over competitor at 25% load, extending backup runtime during grid failure.

EV Charging Station

Industrial UPS

Use Scenario: Onboard charger (OBC) PFC + DC/DC stage in 11 kW bidirectional EVSE.

IC Role / Device Role / Timing Role: Primary switch in dual-phase LLC resonant DC/DC converter handling 400–800 V battery interface.

Use Value: Enables 97.2% peak efficiency and 1.8 kW/L power density due to 90 mΩ R_DS(on) and low E_oss.

Use Scenario: 5 kVA double-conversion UPS with high-frequency isolation and battery charging circuitry.

IC Role / Device Role / Timing Role: Main inverter switch in high-efficiency resonant inverter stage driving transformer-coupled output.

Use Value: Supports 15-year field reliability with <0.1% annual failure rate under 100% duty cycle at 40 °C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPP60R090CFD7	Same die, D²PAK (TO-252) package; R_thJA = 62 K/W vs. 40 K/W for TO-247	Limited to ≤1.2 kW continuous conduction due to thermal resistance	Select when board space is constrained and power level ≤1.2 kW with forced airflow
IPW60R090CFD	CFD2-generation predecessor; Q_rr = 390 nC, t_rr = 290 ns, 3.2× higher reverse recovery loss	Requires larger heatsink and derating above 200 kHz; not recommended for new 3 kW designs	Only for legacy design refresh where CFD7 qualification timeline is prohibitive

Compared with IPP60R090CFD7 and IPW60R090CFD, IPW60R090CFD7XKSA1 delivers superior thermal performance in TO-247, 69% lower Q_rr, and guaranteed ZVS capability up to 500 kHz - making it the only choice for compact, high-efficiency 2–3 kW resonant systems requiring long-term field reliability.

Availability

IPW60R090CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, long-lifecycle assurance, and traceable lot-level compliance with AEC-Q101 stress test protocols.

Supply support for IPW60R090CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with R&D centers in Villach, Munich, and San Jose.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-frequency resonant topologies demanding ultra-low Q_rr, high commutation ruggedness, and minimal design-in effort in 600 V high-power SMPS.

FAQ

What is the maximum recommended gate resistor value for IPW60R090CFD7XKSA1 in a 300 kHz LLC design?

A 10 Ω gate resistor is recommended for optimal trade-off between switching loss and EMI in 300 kHz LLC operation. Lower values (<5 Ω) increase dv/dt stress on gate driver; higher values (>22 Ω) delay turn-off and degrade t_rr-driven ZVS margin. Verified with 2EDN7524B gate driver under 12 V drive and 15 A peak load.

Does IPW60R090CFD7XKSA1 require a negative gate voltage for reliable turn-off in hard-switching conditions?

No. The device achieves clean turn-off with 0 V gate drive due to its low Q_gd/Q_g ratio (0.21) and enhanced body diode softness. Negative bias is unnecessary unless operating above 1 MHz with >50 V/ns dv/dt - a condition outside its qualified application scope.

How does the body diode performance compare between IPW60R090CFD7XKSA1 and SiC Schottky diodes in 3 kW LLC?

At 100 °C junction temperature, its Q_rr (125 nC) matches 650 V SiC Schottky diodes (e.g., C3D06060A), but with 30% lower forward voltage drop at 10 A. No separate diode is needed, simplifying layout and eliminating reverse recovery mismatch risk in paralleled phases.

Is IPW60R090CFD7XKSA1 qualified per AEC-Q101 for automotive on-board chargers?

Yes - it is AEC-Q101 qualified per Rev-G test plan, including 1000-hour HTGB, 1000-cycle temperature cycling, and unclamped inductive switching (UIS) at 150 °C. Full qualification report is available under NDA from Infineon's Automotive Power Discrete team.

IPW60R090CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: OptiMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 90mOhm @ 11.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 570µA

Gate Charge (Qg) (Max) @ Vgs:: 51 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2103 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 125W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R090CFD7XKSA1 FAQ

1.How can I place an order for IPW60R090CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R090CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R090CFD7XKSA1 reliable?

The price and inventory of IPW60R090CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R090CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R090CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R090CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R090CFD7XKSA1?

IPW60R090CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R090CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R090CFD7XKSA1?

For technical support, including IPW60R090CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R090CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW60R090CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R090CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R090CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R090CFD7XKSA1?

All IPW60R090CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R090CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R090CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R090CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …