Infineon Technologies IPW60R099C6FKSA1

Overview

IPW60R099C6FKSA1 from Infineon Technologies is a 600 V, 99 mΩ CoolMOS C6 superjunction power MOSFET in TO-247-3 package, rated for 35 A continuous drain current at T_c = 25 °C, featuring 19 nC total gate charge and 1.4 nF output capacitance, designed for high-efficiency hard-switched PFC and SMPS primary-side switching in industrial power supplies.

For engineers reviewing the IPW60R099C6FKSA1 datasheet, IPW60R099C6FKSA1 pinout, IPW60R099C6FKSA1 application, or IPW60R099C6FKSA1 equivalent, key selection criteria include R_DS(on) vs. gate charge trade-off, avalanche ruggedness (E_AS = 780 mJ), thermal resistance (R_thJC = 0.55 K/W), and fast turn-on/turn-off times (t_on = 24 ns, t_off = 70 ns) under standardized test conditions.

Technical Context

This device implements Infineon's 6th-generation CoolMOS superjunction architecture with optimized charge balance and reduced specific on-resistance. It features a fully avalanche-rated structure (E_AS = 780 mJ at T_j = 25 °C) and supports hard-switching operation up to 100 kHz without requiring snubbers in well-designed layouts.

The gate threshold voltage (V_GS(th) = 3.0–4.0 V) enables direct drive from standard 12 V gate drivers, while its low Q_g/Q_gd ratio (19 nC / 5.5 nC) ensures clean switching waveforms and reduced Miller-induced shoot-through risk in half-bridge configurations.

Key Specifications

Pinout & Package

IPW60R099C6FKSA1 uses the industry-standard TO-247-3 plastic package with isolated tab, offering mechanical robustness and proven thermal performance in high-power applications. The package supports screw-mounting and accommodates >200 W dissipation with appropriate heatsinking.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V superjunction MOSFET applications.

Compared with STP60N6F6 and IXFH60N60X3, IPW60R099C6FKSA1 delivers the best combination of low R_DS(on), moderate Q_g, and highest E_AS, making it optimal for unclamped hard-switching applications demanding both efficiency and reliability.

Availability

IPW60R099C6FKSA1 is available at Aetrix Electronics and suitable for industrial switch-mode power supplies, server rectifiers, motor drive inverters, and renewable energy inverters requiring stable component supply across multi-year production cycles.

Supply support for IPW60R099C6FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and wide-bandgap technologies.

The CoolMOS C6 product line targets high-efficiency, high-reliability power conversion systems, specifically engineered to replace older superjunction generations in PFC, SMPS, UPS, and solar inverter applications.

FAQ

What is the maximum recommended gate-source voltage for IPW60R099C6FKSA1?

The absolute maximum V_GS is ±20 V per datasheet Rev. 2.3. Operation above +20 V risks permanent gate oxide damage, while sustained negative gate voltage below –5 V may cause unintended turn-off during high dv/dt events. Recommended drive range is +12 V to +15 V for reliable enhancement and noise immunity.

Does IPW60R099C6FKSA1 require a gate resistor for stability?

Yes - a gate resistor (typically 5–22 Ω) is required to dampen parasitic oscillation and control dV/dt during switching. The device's low Q_gd/Q_g ratio makes it less prone to Miller-induced turn-on, but proper gate loop inductance minimization and resistor placement remain critical for EMI and reliability.

Can IPW60R099C6FKSA1 be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) enables inherent current sharing. However, matched PCB layout (symmetrical gate and source paths), individual gate resistors, and Kelvin source connections are mandatory to avoid dynamic imbalance and localized thermal runaway.

Is the TO-247-3 package of IPW60R099C6FKSA1 electrically isolated?

No - the metal tab is internally connected to the Drain terminal. Electrical isolation from the heatsink must be achieved using insulating thermal pads or mica washers with appropriate dielectric strength (>2 kV) and thermal resistance <0.5 K·in²/W to maintain R_thJC advantage.