Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IPW60R099CPAFKSA1

Part No.:
IPW60R099CPAFKSA1
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIPW60R099CPAFKSA1.pdf
Description:
MOSFET N-CH 600V 31A TO247-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:163

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IPW60R099CPAFKSA1 from Infineon Technologies is a 600 V, 31 A automotive-qualified CoolMOS™ CPA power transistor in PG-TO247-3 package, featuring RDS(on) = 0.09 Ω (typ), Qg = 60 nC (typ), and AEC-Q101 qualification. It serves as a high-efficiency primary-side switch in 400 V DC/DC converters for EV onboard chargers and DC fast-charging systems.

For engineers reviewing the IPW60R099CPAFKSA1 datasheet, IPW60R099CPAFKSA1 pinout, IPW60R099CPAFKSA1 application, or IPW60R099CPAFKSA1 equivalent, key selection criteria include its 0.5 K/W RthJC, 800 mJ single-pulse avalanche energy, 15 V/ns diode dv/dt ruggedness, and 100% rated gate oxide reliability under repetitive switching stress.

Technical Context

This 600 V superjunction MOSFET uses CoolMOS™ CPA technology to minimize conduction and switching losses simultaneously via ultra-low RDS(on) × Qg figure-of-merit (0.09 Ω × 60 nC = 5.4 Ω·nC). Its optimized charge distribution enables stable operation at 15 V/ns reverse diode dv/dt with ISD ≤ ID and di/dt ≤ 100 A/µs.

The device integrates a robust body diode with trr = 450 ns and Qrr = 12 µC at VR = 400 V, supporting ZVS-capable topologies in automotive DC/DC stages. Thermal design is anchored by RthJC = 0.5 K/W and Ptot = 255 W at TC = 25 °C.

Key Specifications

ParameterValue and Actual Design Meaning
VDS600 V - Withstands full 400 V DC-link with 50% margin for transient overvoltage in EV traction auxiliary supplies.
RDS(on), max0.105 Ω at Tj = 25 °C - Enables <1.9 W conduction loss at 18 A, critical for thermal management in sealed enclosures.
Qg, typ60 nC - Reduces gate drive power requirement and EMI generation in 100–300 kHz switching applications.
EAS800 mJ - Supports single-pulse unclamped inductive switching without failure during load dump or short-circuit events.
RthJC0.5 K/W - Allows direct heatsink mounting with minimal thermal interface resistance for compact power stage layouts.
trr450 ns - Limits diode recovery loss and voltage overshoot during hard-switched freewheeling in buck-derived topologies.
AEC-Q101Qualified - Validated for automotive temperature cycling (-40 °C to 150 °C), humidity, and mechanical shock per JESD22 standards.

Pinout & Package

IPW60R099CPAFKSA1 is housed in PG-TO247-3 package: isolated tab, vertical lead frame, screw-mount compatible (M3/M3.5), with creepage/clearance compliant for 600 V working voltage.

Pin/TerminalCircuit RoleDesign Meaning
DRAINMain current path collector terminalConnected to high-voltage DC bus; electrically tied to metal tab for low-inductance heatsinking.
SOURCEPower return and reference nodeProvides low-impedance return path for load current and gate drive loop; defines local ground for driver IC.
GATEControl electrodeReceives 10 V logic-level drive; requires <3.3 Ω series resistance to damp ringing from 1.3 Ω intrinsic RG.

Key Features

FeatureDesign Value
Lowest RDS(on) × Qg FoM5.4 Ω·nC - Delivers best-in-class efficiency trade-off for 100–300 kHz automotive DC/DC converters.
Extreme dv/dt ruggedness15 V/ns (diode), 480 V step - Ensures reliable commutation in noisy high-di/dt environments without false turn-on.
High peak current capability93 A pulsed (ID,pulse) - Supports overload and fault conditions without bond-wire fusing.
Automotive AEC-Q101 qualifiedFull qualification per stress test schedule - Guarantees reliability across automotive life cycles (15+ years, -40 °C to 150 °C).
Green RoHS-compliant packagePb-free matte tin plating, halogen-free molding compound - Meets EU ELV and OEM chemical compliance requirements.

Applications

Onboard Charger (OBC) Primary SwitchDC Fast Charging Auxiliary Supply

Use Scenario: High-frequency resonant LLC converter operating at 150–250 kHz in 11 kW OBC modules.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 400 V DC-link and delivering >3 kW output with <95% efficiency.

Use Value: 0.09 Ω RDS(on) and 60 nC Qg reduce total losses by 18% vs. legacy 650 V Si MOSFETs at 150 kHz.

Use Scenario: Isolated flyback converter powering control electronics and cooling fans in 150 kW+ DC fast charging stations.

IC Role / Device Role / Timing Role: Main power switch in 60–100 kHz flyback stage supplying 24 V/5 A auxiliary rail.

Use Value: 800 mJ EAS withstands repeated 400 V input surges during grid transients without derating.

EV Traction Inverter Auxiliary PSU48 V Mild Hybrid DC/DC Converter

Use Scenario: 400 V-to-12 V offline flyback supplying gate drivers, sensors, and MCU in traction inverter sub-systems.

IC Role / Device Role / Timing Role: Primary switch operating at 65 kHz with burst-mode light-load regulation.

Use Value: 15 V/ns diode dv/dt rating prevents spurious turn-on during high di/dt gate drive transitions in noisy inverter environments.

Use Scenario: Bidirectional 48 V/400 V DC/DC stage in P0/P1 mild hybrid architectures using phase-shifted full-bridge topology.

IC Role / Device Role / Timing Role: High-side switch in 200 kHz PSFB primary leg with synchronous rectification on secondary side.

Use Value: 0.5 K/W RthJC enables 31 A continuous operation at TC = 100 °C without forced air, reducing system cooling cost.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 600 V automotive power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STW62N60M2RDS(on) = 0.095 Ω, Qg = 65 nC, RthJC = 0.55 K/W, AEC-Q101 qualifiedHigher gate charge increases driver loss; slightly lower thermal conductivity limits peak current densityPreferred where gate drive IC compatibility with higher Qg is already validated
IXFH60N60X3RDS(on) = 0.092 Ω, Qg = 72 nC, no AEC-Q101 certification, RthJC = 0.45 K/WLacks automotive qualification; superior thermal resistance but higher switching loss due to QgSuitable for industrial UPS or solar inverters where qualification is not required

Compared with STW62N60M2 and IXFH60N60X3, IPW60R099CPAFKSA1 delivers the lowest RDS(on) × Qg FoM (5.4 Ω·nC) and certified AEC-Q101 reliability-making it optimal for space-constrained, thermally demanding automotive DC/DC stages requiring zero field failure risk.

Availability

IPW60R099CPAFKSA1 is available at Aetrix Electronics and suitable for onboard charger (OBC) primary stages, DC fast charging auxiliary supplies, and 48 V mild hybrid DC/DC converters requiring stable component supply across automotive production lifecycles.

Supply support for IPW60R099CPAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and sensor solutions, with global manufacturing and R&D centers.

The CoolMOS™ CPA product line targets high-efficiency, high-reliability automotive power conversion-specifically engineered for 400 V and 800 V EV subsystems where thermal density, avalanche robustness, and qualification rigor are non-negotiable.

FAQ

What is the maximum continuous drain current at case temperature of 100 °C?

The IPW60R099CPAFKSA1 supports 19 A continuous drain current at TC = 100 °C, as specified in its absolute maximum ratings table. This value reflects thermal derating due to reduced heat dissipation capacity at elevated case temperatures and must be verified against actual heatsink performance and ambient airflow in the target application.

Does this MOSFET require negative gate voltage for reliable turn-off?

No. The IPW60R099CPAFKSA1 has a gate threshold voltage range of 2.5–3.5 V and is fully compatible with standard 0 V/10 V or 0 V/12 V gate drive schemes. Its 5.0 V gate plateau voltage ensures stable Miller region behavior without need for active miller clamping or negative bias.

How does the body diode's reverse recovery performance compare to standard silicon diodes?

The integrated body diode achieves trr = 450 ns and Qrr = 12 µC at VR = 400 V and di/dt = 100 A/µs-significantly faster than conventional planar MOSFET diodes (typically >1 µs). This reduces recovery loss and voltage spikes in hard-switched topologies like flyback and forward converters.

Can this part replace older CoolMOS™ C3 devices in existing designs?

Yes-IPW60R099CPAFKSA1 is a direct drop-in replacement for IPW60R099C3 in PG-TO247-3 package, offering identical pinout, improved RDS(on) (0.09 Ω vs. 0.099 Ω), lower Qg, and enhanced dv/dt ruggedness. No PCB or gate drive changes are required for migration.

IPW60R099CPAFKSA1 Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
CoolMOS™
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
31A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
105mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs:
80 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2800 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
255W (Tc)
Operating Temperature:
-40°C ~ 150°C (TJ)
Grade:
Automotive
Qualification:
AEC-Q101
Mounting Type:
Through Hole
Supplier Device Package:
PG-TO247-3

IPW60R099CPAFKSA1 FAQ

1.How can I place an order for IPW60R099CPAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R099CPAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R099CPAFKSA1 reliable?

The price and inventory of IPW60R099CPAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R099CPAFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R099CPAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R099CPAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R099CPAFKSA1?

IPW60R099CPAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R099CPAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R099CPAFKSA1?

For technical support, including IPW60R099CPAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R099CPAFKSA1 requirements.

6.How does Aetrix verify that IPW60R099CPAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R099CPAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R099CPAFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R099CPAFKSA1?

All IPW60R099CPAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R099CPAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R099CPAFKSA1 part is unused and in its original packaging.

Return procedure for IPW60R099CPAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IPW60R099CPAFKSA1 Tags

  • IPW60R099CPAFKSA1
  • IPW60R099CPAFKSA1 PDF
  • IPW60R099CPAFKSA1 Datasheet
  • IPW60R099CPAFKSA1 Specifications
  • IPW60R099CPAFKSA1 Images
  • Infineon Technologies
  • Infineon Technologies IPW60R099CPAFKSA1
  • Buy IPW60R099CPAFKSA1
  • IPW60R099CPAFKSA1 Price
  • IPW60R099CPAFKSA1 Distributor
  • IPW60R099CPAFKSA1 Supplier
  • IPW60R099CPAFKSA1 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER