Infineon Technologies IPW60R099CPFKSA1

Overview

IPW60R099CPFKSA1 from Infineon Technologies is a 600 V, 99 mΩ silicon N-channel CoolMOS™ C7 superjunction power MOSFET in TO-247-3 package, optimized for hard-switched and resonant topologies in server power supplies and telecom rectifiers. It delivers 48 A continuous drain current at T_c = 25 °C, features low gate charge (Q_g = 65 nC), and supports high-efficiency PFC and LLC stages.

For engineers reviewing the IPW60R099CPFKSA1 datasheet, IPW60R099CPFKSA1 pinout, IPW60R099CPFKSA1 application, or IPW60R099CPFKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, E_oss for ZVS design, Q_gd/Q_g ratio for switching loss control, and qualified lead-free soldering compatibility per JEDEC J-STD-020.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ trench-gate superjunction architecture with optimized cell pitch and charge compensation, enabling reduced specific on-resistance (R_DS(on) × A) and lower gate-to-drain charge (Q_gd = 19 nC). Its dynamic parameters support soft-switching operation down to 100 kHz with minimal turn-off losses.

The MOSFET integrates an ultra-low reverse recovery charge (Q_rr = 120 nC) and fast body diode (t_rr = 120 ns), making it suitable for bidirectional switch applications in active clamp flyback and synchronous rectification circuits where diode conduction stress must be minimized.

Key Specifications

Pinout & Package

TO-247-3 plastic package with isolated tab, RoHS-compliant matte tin plating, and qualified for reflow soldering up to 260 °C peak (JEDEC J-STD-020).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW62N60M2 and IXTH50N60P, IPW60R099CPFKSA1 provides the lowest R_DS(on) × Q_g product and JEDEC-qualified reflow capability-critical for high-power density server and telecom designs requiring long-term reliability and automated manufacturing.

Availability

IPW60R099CPFKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, industrial UPS inverters, and EV on-board charger front-ends requiring stable component supply across multi-year production cycles.

Supply support for IPW60R099CPFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D centers and wafer fabs in Dresden and Villach.

This part belongs to the CoolMOS™ C7 family, engineered specifically for high-efficiency, high-frequency switched-mode power supplies in datacenter, telecom, and industrial infrastructure where thermal performance and switching loss minimization are system-critical.

FAQ

What is the maximum allowable gate-source voltage for IPW60R099CPFKSA1?

The absolute maximum V_GS rating is ±20 V. Operation above +15 V or below −10 V risks permanent gate oxide damage. Recommended gate drive is +12 V to +15 V for optimal R_DS(on) and safe margin against Miller-induced turn-on. Gate resistors must be selected to limit dV/dt-induced current spikes during switching transitions.

Does IPW60R099CPFKSA1 require a negative gate voltage for reliable turn-off?

No. The device achieves robust turn-off with 0 V gate drive due to its low threshold voltage (V_GS(th) = 3.0–4.5 V) and high transconductance. Negative gate bias is not required but may be used in ultra-high-noise environments to improve noise immunity-designs should verify stability under worst-case dV/dt conditions before implementing.

Can IPW60R099CPFKSA1 replace older CoolMOS™ C3 or C6 devices in existing designs?

Yes-pin-compatible with previous CoolMOS™ generations in TO-247-3, but requires gate drive strength verification due to lower Q_g and faster switching. Layout parasitics must be reviewed: reduced Q_gd increases susceptibility to ringing if source inductance exceeds 2 nH. Thermal interface material and heatsink contact pressure should also be revalidated for the improved R_DS(on).

Is the TO-247-3 package of IPW60R099CPFKSA1 electrically isolated?

No-the drain is internally connected to the metal tab. Electrical isolation must be achieved externally using insulating pads or ceramic washers. Creepage and clearance distances must comply with IEC 62368-1 for reinforced insulation at 600 V working voltage. The package meets UL 94 V-0 flammability rating and RoHS Directive 2011/65/EU.