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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R120C7XKSA1

Name: IPW60R120C7XKSA1
Brand: Infineon Technologies
SKU: IPW60R120C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R120C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R120C7XKSA1.pdf

Description:: MOSFET N-CH 600V 19A TO247-3

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Product details

Overview

IPW60R120C7XKSA1 from Infineon Technologies is a 600 V, 120 mΩ superjunction N-channel power MOSFET in TO-247 package, optimized for high-efficiency PFC and LLC resonant converters in server, telecom, and solar inverters. It delivers 31 A continuous drain current at Tj < 150°C, 34 nC total gate charge, and 4 µJ output switching energy at 400 V.

For engineers reviewing the IPW60R120C7XKSA1 datasheet, IPW60R120C7XKSA1 pinout, IPW60R120C7XKSA1 application, or IPW60R120C7XKSA1 equivalent, key selection criteria include R_DS(on)×E_oss figure-of-merit, 120 V/ns dv/dt ruggedness, body diode dI/dt capability (360 A/µs), and industrial-grade JEDEC qualification.

Technical Context

CoolMOS™ C7 technology employs advanced superjunction cell design to achieve R_DS(on)×A below 1 Ω·mm² - the first 600 V MOSFET to do so. Its optimized charge distribution reduces E_oss and Q_g, enabling hard- and soft-switching topologies without sacrificing ruggedness.

The device features enhanced dv/dt immunity (120 V/ns) and fast reverse recovery (t_rr = 310 ns, Q_rr = 3.5 µC) with controlled body diode dI/dt (360 A/µs), making it suitable for high-frequency, high-power-density SMPS where synchronous rectification is not used.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	600 V - rated blocking voltage for 400 V DC-link PFC stages with 20% margin
R_DS(on),max	120 mΩ at T_j = 150°C - enables 31 A continuous conduction in thermally constrained 1U server PSUs
Q_g,typ	34 nC - low gate drive power requirement supports >300 kHz LLC operation with standard gate drivers
E_oss@400V	4 µJ - reduces turn-on loss in ZVS/ZCS circuits, critical for >96% efficiency telecom rectifiers
dv/dt ruggedness	120 V/ns - prevents false turn-on in high-dI/dt, high-frequency bridge legs without snubbers
Body diode dI/dt	360 A/µs - sustains fast commutation in asymmetric half-bridge PFC without oscillation or latch-up
T_j max	150°C - qualified per JEDEC J-STD-20/JESD22 for industrial ambient conditions up to 85°C

Pinout & Package

IPW60R120C7XKSA1 uses the standard TO-247 package with isolated tab (drain-connected). The case is electrically connected to Pin 2 (Drain), enabling direct heatsink mounting with minimal thermal resistance (R_thJC = 1.357 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	Low-impedance input (R_G = 0.83 Ω) compatible with 5–15 V logic-level gate drivers
Pin 2 (Drain) + Tab	High-voltage power terminal	Electrically tied to metal tab; requires insulated mounting hardware when heatsink is grounded
Pin 3 (Source)	Power return / reference node	Serves as local ground reference for gate driver; carries full load current and body diode conduction

Key Features

Feature	Design Value
Superjunction R_DS(on)×A < 1 Ω·mm²	Enables higher power density than prior-gen 600 V MOSFETs in same TO-247 footprint
R_DS(on)×E_oss FOM	Best-in-class trade-off between conduction loss and hard-switching loss for PFC designs
120 V/ns dv/dt rating	Eliminates need for external gate resistors or RC snubbers in high-speed bridge configurations
360 A/µs body diode dI/dt	Supports zero-voltage switching in asymmetric half-bridge PFC without external diode clamping
JEDEC industrial qualification	Validated for 15-year field life in telecom rectifiers and solar string inverters

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Active clamp forward or LLC resonant converter in 1U 2 kW AC-DC PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in resonant half-bridge, operating at 300–500 kHz.

Use Value: Low E_oss (4 µJ) and 120 mΩ R_DS(on) enable >96.2% peak efficiency while maintaining thermal margin at 70°C ambient.

Use Scenario: Boost PFC stage in -48 V telecom rectifier with 3.3 kW output.

IC Role / Device Role / Timing Role: Switching element in continuous conduction mode (CCM) boost converter.

Use Value: 360 A/µs body diode dI/dt and 120 V/ns dv/dt allow stable operation under rapid load transients without shoot-through risk.

Solar String Inverter

Industrial UPS

Use Scenario: DC-DC isolation stage in 10 kW photovoltaic string inverter with SiC diode output.

IC Role / Device Role / Timing Role: High-side switch in phase-shifted full-bridge topology.

Use Value: 650 V V_DS@T_j,max provides 30% overvoltage margin against 1000 V DC-link surges during MPPT transients.

Use Scenario: Output H-bridge in online double-conversion 5 kVA UPS with battery backup.

IC Role / Device Role / Timing Role: Hard-switched PWM switch in inverter leg driving transformer-coupled output.

Use Value: 78 mJ single-pulse avalanche energy (E_AS) ensures robustness during short-circuit events without external protection.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW60N60DM6	R_DS(on) = 115 mΩ, Q_g = 42 nC, E_oss = 6.2 µJ @ 400 V	Higher switching loss limits usable frequency to ≤250 kHz in LLC; better for lower-frequency PFC	Prefer when gate drive strength exceeds 2 A and thermal mass allows higher R_DS(on) tolerance
IXFH60N60X3	R_DS(on) = 130 mΩ, Q_g = 29 nC, E_oss = 3.1 µJ @ 400 V, no JEDEC industrial qualification	Lower E_oss improves light-load efficiency but lacks long-term reliability validation for telecom/solar	Consider only for cost-sensitive industrial SMPS with <5-year warranty requirements

Compared with STW60N60DM6 and IXFH60N60X3, IPW60R120C7XKSA1 offers superior R_DS(on)×E_oss balance and JEDEC-qualified industrial reliability-critical for server PSUs and telecom rectifiers requiring >10-year field life and 300+ kHz operation.

Availability

IPW60R120C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, long-lifecycle assurance, and consistent parametric performance across production batches.

Supply support for IPW60R120C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ C7 series was developed to address efficiency and power density bottlenecks in next-generation 600 V SMPS, targeting high-performance computing, 5G infrastructure, and renewable energy conversion systems.

FAQ

Is IPW60R120C7XKSA1 suitable for paralleling in high-current PFC designs?

Yes - the device supports paralleling with proper gate layout practices. Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation. Matching R_DS(on) tolerance (±20%) and thermal coupling ensure balanced current sharing up to 120 A total.

What is the maximum recommended gate resistor value for 350 kHz LLC operation?

For 350 kHz operation with V_GS = 13 V drive, a 5.3 Ω gate resistor is validated in the datasheet for optimal switching speed and EMI control. Increasing beyond 10 Ω raises turn-on delay (>15 ns) and increases conduction loss disproportionately due to extended Miller plateau time.

Does the TO-247 package include an isolated tab?

Yes - the metal tab is internally connected to Pin 2 (Drain) and electrically isolated from Pins 1 and 3. When mounted to a grounded heatsink, insulation hardware (e.g., silicone pad + ceramic washer) must be used to prevent shorting the drain to system ground.

How does the body diode's reverse recovery performance compare to standard silicon MOSFETs?

This device achieves t_rr = 310 ns and Q_rr = 3.5 µC at 400 V - ~40% lower Q_rr than legacy 600 V MOSFETs. Its controlled dI/dt (360 A/µs) minimizes voltage overshoot during commutation, reducing stress on snubber components in hard-switched PFC stages.

IPW60R120C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 120mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 390µA

Gate Charge (Qg) (Max) @ Vgs:: 34 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 92W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R120C7XKSA1 FAQ

1.How can I place an order for IPW60R120C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R120C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R120C7XKSA1 reliable?

The price and inventory of IPW60R120C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R120C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R120C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R120C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R120C7XKSA1?

IPW60R120C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R120C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R120C7XKSA1?

For technical support, including IPW60R120C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R120C7XKSA1 requirements.

6.How does Aetrix verify that IPW60R120C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R120C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R120C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R120C7XKSA1?

All IPW60R120C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R120C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R120C7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R120C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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