Infineon Technologies IPW60R125C6FKSA1

Overview

IPW60R125C6FKSA1 from Infineon Technologies is a 600 V, 125 mΩ CoolMOS™ C6 superjunction MOSFET optimized for hard-switched and resonant SMPS topologies including LLC and PFC stages. It delivers 14 A continuous drain current at T_c = 25 °C, features ultra-low gate charge (Q_g = 27 nC), and achieves R_DS(on) × Q_g figure-of-merit of 3.375 Ω·nC - enabling high-efficiency, compact 1–3 kW server power supplies and telecom rectifiers.

For engineers reviewing the IPW60R125C6FKSA1 datasheet, IPW60R125C6FKSA1 pinout, IPW60R125C6FKSA1 application, or IPW60R125C6FKSA1 equivalent, key selection criteria include its 600 V V_DSS, 125 mΩ R_DS(on) at V_GS = 10 V, 27 nC total gate charge, 930 pF output capacitance, and 1.85 µC reverse recovery charge - all critical for ZVS/ZCS design validation and thermal derating in high-density AC/DC converters.

Technical Context

This device implements Infineon's CoolMOS™ C6 technology based on superjunction cell architecture with optimized charge compensation and trench-gate design. It operates with a fixed gate threshold voltage of 3.2 V (typ.) and exhibits low intrinsic capacitance asymmetry (C_oss/C_iss = 0.13), supporting fast, low-loss switching in both hard- and soft-switching modes.

The MOSFET integrates a monolithic body diode with 0.2 V forward voltage drop at I_F = 14 A and t_rr = 200 ns (typ.), enabling reliable synchronous rectification and resonant operation without external diode parallelization. Its 1.85 µC Q_rr and low reverse recovery dv/dt sensitivity reduce EMI and snubber losses in bridge-leg configurations.

Key Specifications

Pinout & Package

IPW60R125C6FKSA1 uses the standard TO-247-3L through-hole package with isolated tab, rated for 2.5 kV isolation and 0.5 N·m screw torque. The package provides low thermal resistance (R_thJC = 0.52 K/W) and robust mechanical mounting for industrial-grade reliability.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Compared with STW60N60DM6 and IXFH60N60X3, IPW60R125C6FKSA1 strikes optimal balance between conduction and switching loss across 100–300 kHz, delivering lowest total loss in 1.5–2.5 kW hard-switched PFC and LLC designs with moderate gate drive capability.

Availability

IPW60R125C6FKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and industrial UPS systems requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from authorized channels.

Supply support for IPW60R125C6FKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global R&D centers and ISO/TS 16949-certified wafer fabs.

This device belongs to the CoolMOS™ C6 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC/DC conversion in datacenter, telecom, and industrial power systems operating at 600 V class.

FAQ

What is the maximum continuous drain current for IPW60R125C6FKSA1 at 100 °C case temperature?

The maximum continuous drain current is 9.2 A at T_c = 100 °C, derived from the device's 156 W power dissipation rating and thermal resistance R_thJC = 0.52 K/W. This value assumes ideal heatsinking and accounts for derating per JEDEC JESD51-2 standards.

Does IPW60R125C6FKSA1 require a negative gate turn-off voltage?

No - the device has a positive gate threshold voltage of 3.2 V (typ.) and is fully enhanced at V_GS = 10 V. Negative gate bias is not required for safe operation, though –5 V may be used to improve noise immunity in high-dV/dt environments.

Can IPW60R125C6FKSA1 replace older CoolMOS™ C3 devices in existing designs?

Yes - it is pin-compatible with IPW60R125C3 and offers identical TO-247-3L footprint, improved R_DS(on) × Q_g, and enhanced dV/dt ruggedness. Layout changes are unnecessary, but gate resistor values may be reduced by 20–30% to optimize switching speed.

What is the recommended gate resistor value for 250 kHz LLC operation?

A 10 Ω non-inductive gate resistor is recommended for 250 kHz LLC operation, balancing switching speed (t_r/t_f ≈ 14/72 ns), EMI performance, and gate driver stress. Values below 5 Ω increase ringing risk; above 15 Ω raise switching losses by >15%.