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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW60R180C7XKSA1

Name: IPW60R180C7XKSA1
Brand: Infineon Technologies
SKU: IPW60R180C7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW60R180C7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW60R180C7XKSA1.pdf

Description:: MOSFET N-CH 600V 13A TO247-3

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Product details

Overview

IPW60R180C7XKSA1 from Infineon Technologies is a 600V superjunction N-channel power MOSFET in the CoolMOS™ C7 family, designed for high-efficiency hard- and soft-switching topologies. It delivers R_DS(on) = 180 mΩ (max), Q_g = 24 nC (typ), E_oss = 2.7 µJ @ 400V, and dv/dt ruggedness of 120 V/ns - enabling high-frequency PFC and LLC stages in server and telecom SMPS.

For engineers reviewing the IPW60R180C7XKSA1 datasheet, IPW60R180C7XKSA1 pinout, IPW60R180C7XKSA1 application, or IPW60R180C7XKSA1 equivalent, key selection criteria include its 650V V_DS rating, 22 A continuous drain current at T_j < 150°C, low R_DS(on)·E_oss figure-of-merit, TO-247 package with isolated tab, and industrial-grade JEDEC qualification.

Technical Context

CoolMOS™ C7 employs charge-compensated superjunction architecture to achieve sub-1 Ω·mm² R_DS(on)·A, enabling higher power density than prior generations. Its optimized gate charge profile (Q_gd/Q_g = 8/24 nC) reduces switching loss sensitivity to Miller effect during high dv/dt transitions.

The device features a robust body diode with 350 A/µs di/dt capability and 280 ns reverse recovery time, supporting synchronous rectification and ZVS operation in resonant converters. Thermal resistance R_thJC = 1.832 °C/W ensures efficient heat transfer to heatsinks in high-power industrial designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands transient overvoltage up to 650 V without avalanche breakdown, supporting 400 V DC-link PFC and 48 V–54 V telecom rectifiers.
R_DS(on) max	180 mΩ @ T_j = 150°C - Enables low conduction loss in high-current PWM stages; supports 22 A continuous ID at 150°C junction temperature.
Q_g typ	24 nC @ V_DD = 400 V - Reduces gate drive power and enables faster turn-on with standard 1-A gate drivers in LLC half-bridge configurations.
E_oss	2.7 µJ @ 400 V - Low stored output capacitance energy minimizes turn-off loss and improves efficiency at >100 kHz switching frequencies.
dv/dt ruggedness	120 V/ns - Sustains fast voltage transients during hard switching without false turn-on, eliminating need for external gate clamping in PFC boost stages.
I_D,pulse	45 A - Supports short-term overload conditions in UPS and solar inverters without thermal runaway under pulse-width-limited operation.

Pinout & Package

IPW60R180C7XKSA1 is housed in a TO-247 package with isolated metal tab (Drain-connected), optimized for high-voltage isolation and thermal performance in industrial power modules.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives gate drive signal; requires 10 V minimum for full enhancement; RG = 0.85 Ω limits ringing in high-speed switching.
Pin 2 (Drain)	Main current path (high-side)	Connected to internal silicon die and isolated metal tab; carries full load current and withstands 650 V blocking voltage.
Pin 3 (Source)	Reference node / return path	Serves as common reference for gate drive and current sensing; tied to PCB ground plane in low-side configurations.

Key Features

Feature	Design Value
Superjunction architecture	Enables R_DS(on)·A < 1 Ω·mm² - delivers highest power density among 600 V MOSFETs in TO-247, reducing heatsink size by ~25% vs. C6 generation.
Low R_DS(on)·E_oss FOM	486 mΩ·µJ - directly lowers total switching loss in PFC and LLC, improving system efficiency by 0.5–0.8% at 2 kW output.
Body diode dI/dt rating	350 A/µs - supports fast commutation in synchronous rectifier and bidirectional DC-DC applications without oscillation or latch-up.
JEDEC industrial qualification	Qualified per J-STD-20 and JESD22 - ensures reliability across -55°C to +150°C operating range in server PSUs and telecom rectifiers.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side PFC boost stage in 2–3 kW redundant AC-DC supplies for data center servers.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost converter operating at 65–100 kHz.

Use Value: 120 V/ns dv/dt ruggedness prevents spurious turn-on during line transients; low E_oss enables >96% PFC efficiency at full load.

Use Scenario: Input-stage switch in 48 V telecom rectifiers handling 3 kW output with wide input range (90–264 VAC).

IC Role / Device Role / Timing Role: Hard-switched active clamp forward or phase-shifted full-bridge primary switch.

Use Value: 650 V V_DS rating accommodates 400 V DC-link with margin; 22 A I_D supports peak currents in burst-mode operation.

Solar Inverter DC-Link

Industrial UPS

Use Scenario: DC-DC boost stage in string inverters converting 600–1000 V PV array output to 1200 V DC-link.

IC Role / Device Role / Timing Role: High-side switch in interleaved dual-phase boost converter operating at 50–80 kHz.

Use Value: 180 mΩ R_DS(on) minimizes conduction loss at 15–20 A average current; TO-247 tab isolation simplifies creepage/clearance compliance.

Use Scenario: Inverter bridge switch in 5–10 kVA double-conversion UPS systems with battery backup.

IC Role / Device Role / Timing Role: Low-loss switching device in three-phase IGBT/MOSFET hybrid inverter stage.

Use Value: 45 A I_D,pulse handles motor-start surge loads; 150°C T_j,max supports derated operation in sealed enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW60R190C7	R_DS(on) = 190 mΩ (max); identical Q_g, E_oss, and package	Marginally higher conduction loss; otherwise drop-in compatible in same PCB footprint	Select when cost optimization is prioritized over minimal R_DS(on) variation in volume production.
STP60N6F6	600 V, R_DS(on) = 180 mΩ, but Q_g = 42 nC and E_oss = 5.1 µJ - significantly higher switching loss	Limited to lower-frequency (<65 kHz) hard-switched PFC due to inferior FOM	Consider only for legacy designs where gate drive strength exceeds 2 A and efficiency targets are relaxed.

Compared with IPW60R190C7, the IPW60R180C7XKSA1 offers tighter R_DS(on) tolerance and better thermal margin at full load; versus STP60N6F6, it delivers 32% lower R_DS(on)·Q_g and enables 15–20 kHz higher operating frequency without efficiency penalty.

Availability

IPW60R180C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar inverter DC-link stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IPW60R180C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ C7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density AC-DC and DC-DC conversion in computing, telecom, and renewable energy systems.

FAQ

Is IPW60R180C7XKSA1 suitable for paralleling in high-current designs?

Yes - the device supports MOSFET paralleling with proper gate layout. Infineon recommends using ferrite beads on individual gate lines or separate totem-pole drivers to suppress oscillation and ensure current sharing. Matching R_DS(on) tolerance (±10%) and thermal coupling between devices is critical for stable operation above 60 A total current.

What is the maximum recommended gate resistor value for 100 kHz LLC operation?

For 100 kHz LLC half-bridge operation with V_GS = 13 V drive, a gate resistor of 4.7 Ω is recommended to balance switching speed and EMI. This yields ~12 ns rise time and keeps dv/dt below 100 V/ns while maintaining gate drive stability - verified in Infineon's AN2015-05 application note for C7 series.

Does the TO-247 package have an electrically isolated tab?

Yes - the TO-247 package used for IPW60R180C7XKSA1 features an electrically isolated metal tab connected exclusively to the Drain terminal. This allows direct mounting to heatsinks without insulating pads in floating-drain configurations, simplifying thermal design in high-voltage PFC and inverter stages.

How does its body diode performance compare to standard silicon MOSFETs?

The CoolMOS™ C7 body diode achieves 350 A/µs di/dt and 280 ns t_rr - outperforming standard planar MOSFETs by >2× in commutation speed and 30% lower Q_rr. This enables reliable zero-voltage switching in LLC resonant converters and reduces snubber losses in hard-switched topologies without requiring external Schottky catch diodes.

IPW60R180C7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ C7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 600 V

Current - Continuous Drain (Id) @ 25°C:: 13A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 180mOhm @ 5.3A, 10V

Vgs(th) (Max) @ Id:: 4V @ 260µA

Gate Charge (Qg) (Max) @ Vgs:: 24 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1080 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 68W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW60R180C7XKSA1 FAQ

1.How can I place an order for IPW60R180C7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW60R180C7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW60R180C7XKSA1 reliable?

The price and inventory of IPW60R180C7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R180C7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW60R180C7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW60R180C7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW60R180C7XKSA1?

IPW60R180C7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW60R180C7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW60R180C7XKSA1?

For technical support, including IPW60R180C7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R180C7XKSA1 requirements.

6.How does Aetrix verify that IPW60R180C7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW60R180C7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R180C7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW60R180C7XKSA1?

All IPW60R180C7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R180C7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW60R180C7XKSA1 part is unused and in its original packaging.

Return procedure for IPW60R180C7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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