Infineon Technologies IPW60R180P7XKSA1

Overview

IPW60R180P7XKSA1 from Infineon Technologies is a 600 V, 180 mΩ superjunction N-channel power MOSFET in PG-TO247-3 package, optimized for high-efficiency hard/soft-switching PFC and LLC resonant converters. It delivers 53 A pulsed drain current, 25 nC total gate charge, and 2.9 µJ output switching energy at 400 V, enabling compact, thermally efficient designs in server PSUs and telecom rectifiers.

For engineers reviewing the IPW60R180P7XKSA1 datasheet, IPW60R180P7XKSA1 pinout, IPW60R180P7XKSA1 application, or IPW60R180P7XKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, body diode commutation ruggedness (900 A/µs), ESD robustness (>2 kV HBM), and low ringing tendency in high-dv/dt environments.

Technical Context

This CoolMOS™ P7 generation device implements an optimized superjunction cell structure with reduced specific on-resistance (R_DS(on)·A < 1 Ω·mm²) and enhanced charge balancing. Its gate plateau voltage of 5.2 V and low Q_gd/Q_g ratio (8/25 nC) support clean turn-off and reduced Miller-induced shoot-through risk in half-bridge topologies.

The MOSFET features a robust intrinsic body diode with 175 ns reverse recovery time and 1.3 µC Q_rr at 400 V, validated for hard commutation up to 900 A/µs diF/dt. Thermal resistance R_thJC is 1.74 °C/W, enabling high-power operation with standard heatsinking in industrial-grade applications.

Key Specifications

Pinout & Package

IPW60R180P7XKSA1 uses the PG-TO247-3 through-hole package with isolated tab (Drain-connected). The package provides high thermal conductivity and mechanical robustness for industrial power modules and open-frame AC-DC supplies.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW60R180P7XKSA1, IPW60R190P7 trades 10 mΩ higher on-resistance for lower unit cost, while STW60N60DM6 offers slightly lower R_DS(on) but lacks documented diF/dt performance and has 52% higher Q_g, increasing gate drive complexity and loss in resonant topologies.

Availability

IPW60R180P7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV inverters, and UPS inverter stages requiring stable component supply across multi-year production cycles.

Supply support for IPW60R180P7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

The CoolMOS™ P7 product line targets high-efficiency AC-DC conversion in datacenter, telecom, and consumer power systems, emphasizing reduced system size, improved thermal behavior, and simplified EMI filtering through low ringing and controlled switching characteristics.

FAQ

What is the maximum recommended gate resistor value for reliable hard-switching operation?

A 10 Ω external gate resistor is validated in the datasheet for 400 V, 5.6 A switching tests with 13 V drive. For 18 A continuous operation, a 4.7–6.8 Ω resistor maintains td(off) < 100 ns while limiting peak gate current to < 2.7 A, preventing driver saturation and ensuring consistent turn-off timing across temperature.

Can IPW60R180P7XKSA1 be paralleled without gate ferrite beads?

No - Infineon explicitly recommends ferrite beads on each gate or separate totem-pole drivers when paralleling. Without them, mismatched propagation delays and parasitic oscillation between devices can cause current imbalance and localized thermal runaway, especially above 10 A per device.

Is the PG-TO247-3 package RoHS-compliant and lead-free?

Yes - IPW60R180P7XKSA1 carries the "XKSA1" suffix indicating full RoHS compliance and lead-free terminations per JEDEC J-STD-609 Class 3. The package uses matte tin plating on leads and meets IPC/JEDEC J-STD-020 moisture sensitivity level 1 (unlimited floor life at ≤30°C/60% RH).

How does its body diode performance compare to silicon carbide Schottky alternatives?

While SiC Schottkys offer zero Q_rr, this CoolMOS™ P7 body diode achieves 1.3 µC Q_rr and 175 ns t_rr - sufficient for soft-switched LLC but not ideal for high-frequency synchronous rectification. Its advantage lies in integrated functionality, lower system cost, and proven ruggedness in hard-commutated PFC where SiC diodes require careful layout to avoid avalanche failure.