Infineon Technologies IPW60R280P6FKSA1
- Part No.:
- IPW60R280P6FKSA1
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IPW60R280P6FKSA1.pdf
- Description:
- MOSFET N-CH 600V 13.8A TO247-3
- Quantity:
- Payment:

- Shipping:

Inventory:192
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Product details
Overview
IPW60R280P6 from Infineon Technologies is a 600 V, 280 mΩ superjunction N-channel power MOSFET in the CoolMOS™ P6 family, optimized for high-efficiency hard-switching and resonant topologies. It delivers 13.8 A continuous drain current at TC = 25°C, 26 nC total gate charge, and 3.5 µJ output energy loss at 400 V - enabling compact, cooler-running PFC and SMPS stages in server PSUs and telecom rectifiers.
For engineers reviewing the IPW60R280P6 datasheet, IPW60R280P6 pinout, IPW60R280P6 application, or IPW60R280P6 equivalent, key selection criteria include its 100 V/ns dv/dt ruggedness, 500 A/µs body diode commutation capability, low RDS(on) × Qg figure-of-merit, and TO-247 package thermal performance (RthJC = 1.2 °C/W).
Technical Context
This device implements Infineon's superjunction architecture with optimized charge balancing for reduced conduction and switching losses. Its gate threshold voltage (3.5–4.5 V) and plateau voltage (6.1 V) support standard 12 V gate drivers without level-shifting, while the 5.5 Ω intrinsic gate resistance aids EMI control.
The MOSFET features enhanced avalanche ruggedness (EAS = 285 mJ), 150 °C maximum junction temperature, and JEDEC industrial-grade qualification. Its body diode exhibits 263 ns reverse recovery time and 2.8 µC Qrr, making it suitable for ZVS and quasi-resonant designs where diode behavior impacts efficiency.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 600 V - supports 400 V DC-link operation with 50 % safety margin in universal-input PFC and telecom rectifiers. |
| RDS(on),max | 280 mΩ at Tj = 150°C - enables low conduction loss in 10–15 A continuous current applications with minimal heatsink requirement. |
| Qg,typ | 26 nC - reduces gate drive power and allows use of low-cost, low-current gate drivers in high-frequency (>100 kHz) converters. |
| Eoss@400V | 3.5 µJ - lowers turn-off loss and improves light-load efficiency in LLC and phase-shifted full-bridge topologies. |
| dv/dt ruggedness | 100 V/ns - ensures reliable operation in high-dV/dt environments like hard-switched bridge legs without false triggering. |
| Body diode di/dt | 500 A/µs - supports fast commutation in synchronous rectification and bidirectional power flow circuits. |
| Tj,max | 150 °C - enables operation in sealed enclosures or high-ambient industrial environments without derating penalties. |
Pinout & Package
IPW60R280P6 uses the PG-TO247 (TO-247) package with isolated tab. The drain connects to the metal tab for direct heatsink mounting; gate and source are leaded terminals on the body.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Tab (Drain) | High-side switch node / Power return path | Electrically connected to drain; requires insulating pad when mounted to grounded heatsink. |
| Pin 1 (Gate) | Control input | Accepts 0–20 V logic-level signal; 5.5 Ω internal resistance simplifies gate loop layout and dampens ringing. |
| Pin 3 (Source) | Reference node / Return path for gate drive | Serves as local ground reference for gate driver; must be low-inductance connection to minimize shoot-through risk. |
Key Features
| Feature | Design Value |
|---|---|
| Superjunction structure with optimized charge balance | Reduces RDS(on) × Qg FOM by >35 % vs. prior CoolMOS™ generations, directly lowering total switching + conduction loss. |
| Enhanced dv/dt immunity | 100 V/ns rating eliminates need for external snubbers in 65–100 kHz hard-switched PFC boost stages. |
| High commutation ruggedness | 500 A/µs body diode di/dt withstand enables reliable zero-voltage switching in LLC resonant converters without external diodes. |
| Industrial-grade qualification | Complies with JEDEC J-STD-20 and JESD22 for reflow, humidity, and temperature cycling - validated for 10+ year field life in server and telecom equipment. |
Applications
| Server Power Supply Units | Telecom Rectifier Modules |
|---|---|
|
Use Scenario: Primary-side switch in active clamp forward or phase-shifted full-bridge converters delivering 1–3 kW at >94 % efficiency. IC Role / Device Role / Timing Role: High-voltage power switch handling 400 V DC-link with 100 kHz switching frequency and ZVS transitions. Use Value: 280 mΩ RDS(on) and 3.5 µJ Eoss reduce total losses by ~1.8 W per device versus legacy 650 V MOSFETs, enabling fanless operation in 1U chassis. |
Use Scenario: Boost PFC stage in 3 kW telecom rectifiers operating across -5 °C to +60 °C ambient. IC Role / Device Role / Timing Role: Critical conduction mode (CRM) or continuous conduction mode (CCM) switch managing 15 A peak line current. Use Value: 100 V/ns dv/dt ruggedness prevents spurious turn-on during rapid bus transients, eliminating need for gate clamping networks and reducing BOM count. |
| LCD/LED TV Power Adapters | Industrial UPS Inverters |
|
Use Scenario: Main switch in 150–300 W flyback or quasi-resonant (QR) controllers powering LCD backlight and main board rails. IC Role / Device Role / Timing Role: Primary-side switching element operating at variable frequency up to 130 kHz with valley switching. Use Value: 263 ns trr and 2.8 µC Qrr minimize body diode losses during QR transitions, improving efficiency by 0.4–0.6 % at 230 V AC input. |
Use Scenario: Half-bridge leg in 5–10 kVA online UPS inverters requiring high reliability under overload and short-circuit conditions. IC Role / Device Role / Timing Role: Hard-switched IGBT replacement in 16 kHz PWM inverter stage driving transformer-isolated output. Use Value: 285 mJ single-pulse avalanche energy rating allows safe operation during 100 ms output short-circuit events without desaturation protection circuitry. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IPW60R190P6 | Lower RDS(on) (190 mΩ), higher Qg (35 nC), same 600 V rating and TO-247 package. | Better conduction loss but higher switching loss; suited for <80 kHz fixed-frequency designs where thermal headroom is limited. | Select when system efficiency is dominated by conduction loss (e.g., high-duty-cycle PFC), not switching loss. |
| STW62N60M2 | 600 V, 220 mΩ, 42 nC, TO-247; uses MDmesh™ M2 technology with lower Coss but no specified dv/dt rating. | Higher gate charge increases driver stress; lacks documented 100 V/ns dv/dt immunity, limiting use in noisy bridge-leg environments. | Prefer only in cost-sensitive, low-noise applications where gate drive capability exceeds 1 A peak and layout is tightly controlled. |
Compared with IPW60R190P6 and STW62N60M2, IPW60R280P6 offers the best balance of gate drive simplicity (26 nC), robustness (100 V/ns), and thermal performance (1.2 °C/W RthJC) for mid-power industrial SMPS where reliability and design margin outweigh marginal RDS(on) gains.
Availability
IPW60R280P6 is available at Aetrix Electronics and suitable for server power supply units, telecom rectifier modules, and industrial UPS inverters requiring stable component supply, long-term lifecycle assurance, and traceable sourcing from Infineon's qualified production lines.
Supply support for IPW60R280P6 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
The CoolMOS™ P6 series was engineered specifically for high-efficiency, high-reliability AC-DC conversion in datacenter, telecom, and industrial power supplies - emphasizing low-loss switching, ruggedness, and ease of integration into existing gate-drive architectures.
FAQ
What is the maximum continuous drain current for IPW60R280P6 at 100°C case temperature?
The maximum continuous drain current is 8.8 A at TC = 100°C, as specified in Table 2 of the Rev. 2.2 datasheet. This value accounts for thermal derating due to junction-to-case thermal resistance (1.2 °C/W) and maximum allowable junction temperature (150°C). Operation above this current requires forced cooling or reduced duty cycle to maintain safe Tj.
Can IPW60R280P6 be used in parallel configurations?
Yes, but with specific layout requirements: each device requires individual gate resistor + ferrite bead (or separate totem-pole drivers) to suppress oscillation and ensure current sharing. The datasheet explicitly recommends this approach for paralleling, citing mismatch in threshold voltage and dynamic parameters that could cause thermal runaway without proper gate control.
Does IPW60R280P6 have a fully rated avalanche capability?
Yes - it is rated for 285 mJ single-pulse avalanche energy (EAS) under defined test conditions (ID = 2.4 A, VDD = 50 V). This capability is production-tested and guaranteed per JEDEC JESD22-A110, enabling robust operation during transient overvoltage events such as inductive load switching or input surges without external clamping.
Is the TO-247 package tab electrically isolated?
No - the metal tab is internally connected to the drain terminal, as confirmed in the "Package Outlines" section and pin assignment diagram (Pin 2 = Tab = Drain). Electrical isolation from the heatsink requires a dielectric pad or insulating washer; failure to isolate may result in short-circuit if the heatsink is grounded or at a different potential.
IPW60R280P6FKSA1 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- CoolMOS™ P6
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 600 V
- Current - Continuous Drain (Id) @ 25°C:
- 13.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 280mOhm @ 5.2A, 10V
- Vgs(th) (Max) @ Id:
- 4.5V @ 430µA
- Gate Charge (Qg) (Max) @ Vgs:
- 25.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1190 pF @ 100 V
- FET Feature:
- -
- Power Dissipation (Max):
- 104W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- PG-TO247-3
IPW60R280P6FKSA1 FAQ
1.How can I place an order for IPW60R280P6FKSA1 through Aetrix?
Please submit a Request for Quotation (RFQ) for IPW60R280P6FKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IPW60R280P6FKSA1 reliable?
The price and inventory of IPW60R280P6FKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW60R280P6FKSA1 is usually 5 days.
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5.How can I obtain technical support or documentation for IPW60R280P6FKSA1?
For technical support, including IPW60R280P6FKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW60R280P6FKSA1 requirements.
6.How does Aetrix verify that IPW60R280P6FKSA1 is sourced from the original manufacturer or authorized distributors?
All IPW60R280P6FKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW60R280P6FKSA1 meets industry standards.
7.What is the process for return or replacement of IPW60R280P6FKSA1?
All IPW60R280P6FKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW60R280P6FKSA1, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IPW60R280P6FKSA1 part is unused and in its original packaging.
Return procedure for IPW60R280P6FKSA1:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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