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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R029CFD7XKSA1

Name: IPW65R029CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW65R029CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R029CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R029CFD7XKSA1.pdf

Description:: MOSFET N-CH 650V 69A TO247-3

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Product details

Overview

IPW65R029CFD7XKSA1 from Infineon is a 650 V, 29 mΩ ultra-fast body diode Superjunction MOSFET in PG-TO247-3 package, optimized for zero-voltage switching (ZVS) topologies including LLC and phase-shift full-bridge converters. It delivers 304 A pulsed drain current, 145 nC total gate charge, and 1300 A/µs diode commutation speed, targeting high-efficiency industrial SMPS in server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPW65R029CFD7XKSA1 datasheet, IPW65R029CFD7XKSA1 pinout, IPW65R029CFD7XKSA1 application, or IPW65R029CFD7XKSA1 equivalent, key selection criteria include R_DS(on) temperature stability, hard commutation ruggedness, E_oss at 400 V (19.8 µJ), and gate charge profile for resonant gate drive design.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology with integrated fast-recovery body diode, enabling robust hard-switching capability while maintaining low conduction and switching losses. Its 0.41 °C/W junction-to-case thermal resistance and 700 V maximum drain-source voltage rating support high-power-density designs under elevated bus voltages.

The MOSFET features a gate plateau voltage of 5.7 V, 44 nC gate-to-drain charge (Q_gd), and 247 pF energy-related output capacitance (C_o(er))-critical parameters for ZVS timing control and snubberless operation in high-frequency resonant converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - supports 400 V nominal DC bus with 75 V margin for transient overvoltage in industrial SMPS
R_DS(on) max @ 150°C	29 mΩ - enables low conduction loss at full load and high ambient temperature
Q_g typ	145 nC - determines gate driver power requirement and influences switching speed trade-off
E_oss @ 400 V	19.8 µJ - directly impacts turn-on loss and ZVS soft-start behavior in LLC converters
di_F/dt max	1300 A/µs - ensures reliable reverse recovery under hard commutation stress in asymmetric half-bridge
T_j max	150 °C - allows operation in thermally constrained enclosures without derating below 100 °C ambient
P_tot @ T_C=25°C	305 W - defines heatsink sizing baseline for continuous conduction mode operation

Pinout & Package

Package: PG-TO247-3, through-hole, isolated tab (Drain-connected), standard mounting with M3/M3.5 screws (60 Ncm torque).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives PWM signal; requires <3.8 Ω gate resistance to limit ringing and ensure stable turn-on/turn-off timing
Pin 2 (Drain)	High-side power switch node	Connected to DC bus or transformer primary; electrically tied to metal tab for thermal path and EMI shielding
Pin 3 (Source)	Power return / reference	Serves as local ground reference for gate driver; must be low-inductance path to minimize dv/dt-induced false triggering

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 208–312 ns and Q_rr = 1.6–3.2 µC enable clean commutation in ZVS without external SiC diode
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25°C to 150°C - maintains efficiency across wide thermal range
High dv/dt ruggedness	120 V/ns (MOSFET) and 70 V/ns (diode) - prevents spurious turn-on in high-noise bridge-leg environments
Optimized C_iss/C_oss ratio	C_iss = 7149 pF, C_oss = 106 pF - balances gate drive loss and ZVS initiation voltage threshold

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end AC/DC converter using dual-phase interleaved LLC topology with 48 V output.

IC Role / Device Role / Timing Role: Primary-side high-side switch operating at 300–500 kHz with ZVS turn-on and controlled diode reverse recovery.

Use Value: Achieves >96% full-load efficiency and <0.5% light-load loss due to low E_oss and ultra-fast diode.

Use Scenario: 48 V/50 A telecom rectifier with phase-shift full-bridge (PSFB) architecture and synchronous rectification.

IC Role / Device Role / Timing Role: High-side switching element managing 380–400 V DC bus; handles hard-commutated transitions during dead-time intervals.

Use Value: Enables 1300 A/µs diF/dt capability to sustain repeated hard commutation without failure, extending system lifetime.

EV Onboard Charger

Solar String Inverter

Use Scenario: Bidirectional OBC with dual-active-bridge (DAB) topology supporting 6.6 kW AC/DC and DC/AC modes.

IC Role / Device Role / Timing Role: Isolated bridge-leg switch handling 650 V bus and reverse-conducting duty during regenerative energy transfer.

Use Value: Integrated fast body diode eliminates need for discrete anti-parallel SiC Schottky, reducing BOM count and layout area by 35%.

Use Scenario: 10 kW string inverter with two-level NPC topology and 1000 V DC input.

IC Role / Device Role / Timing Role: Low-side switching device in three-phase inverter leg, conducting freewheeling current with minimal V_SD drop.

Use Value: 1.0 V typical V_SD at 35.8 A reduces conduction loss by 22% vs. prior CFD2 generation, improving thermal margin at 60°C ambient.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R034CFD7	R_DS(on) = 34 mΩ (vs. 29 mΩ); identical CFD7 die, same package and pinout	Higher conduction loss but lower gate charge (130 nC) - better for higher-frequency ZVS where switching loss dominates	Select when operating above 600 kHz or when gate driver output current is limited
IPP65R041CFD7	PG-TO220FP package (not isolated tab); R_DS(on) = 41 mΩ; same CFD7 process	Limited thermal performance (R_thJC = 0.95 °C/W) - unsuitable for >1.5 kW continuous conduction	Choose only for cost-sensitive, lower-power (<1 kW), non-isolated heatsink applications

Compared with IPW65R034CFD7 and IPP65R041CFD7, IPW65R029CFD7XKSA1 provides the lowest R_DS(on) in TO247-3 packaging, delivering optimal conduction efficiency and thermal headroom for 2–5 kW industrial ZVS converters requiring long-term reliability at 150 °C junction temperature.

Availability

IPW65R029CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, EV onboard chargers, and solar string inverters requiring stable component supply, JEDEC-qualified industrial-grade reliability, and consistent parametric performance across production lots.

Supply support for IPW65R029CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7 family-designed specifically for high-efficiency, high-power-density resonant and soft-switching power converters operating at 650 V class with enhanced body-diode ruggedness.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of ≤1.8 Ω is specified in the datasheet for turn-on/turn-off timing validation at 400 V V_DD. For ZVS assurance in LLC converters, 1.5–1.8 Ω is recommended to balance switching speed and gate oscillation damping; values >2.2 Ω risk incomplete turn-on before resonant voltage reversal, increasing E_on.

Does this MOSFET require external gate clamping or TVS protection?

No external gate clamping is required under normal operation. The device supports ±30 V dynamic gate-source voltage rating and has been validated for 120 V/ns dv/dt ruggedness. However, ferrite beads on the gate trace are recommended when paralleling multiple units to suppress common-mode oscillation.

Can IPW65R029CFD7XKSA1 replace older CFD2-series devices without layout changes?

Yes-pinout, package (PG-TO247-3), and thermal footprint are identical to IPW65R030CFD2. However, gate drive timing differs due to lower Q_g (145 nC vs. 165 nC) and higher diF/dt (1300 A/µs vs. 900 A/µs), requiring verification of dead-time settings and gate driver slew rate compatibility.

Is the metal tab electrically isolated from the Drain terminal?

No-the metal tab is internally connected to Pin 2 (Drain). This configuration provides low-inductance, low-thermal-resistance path to heatsink but requires isolation between heatsink and system ground unless the Drain node is at earth-referenced potential. Insulating pads or shoulder washers must be used in floating-bus configurations.

IPW65R029CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 69A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 29mOhm @ 35.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.79mA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7149 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 305W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R029CFD7XKSA1 FAQ

1.How can I place an order for IPW65R029CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R029CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R029CFD7XKSA1 reliable?

The price and inventory of IPW65R029CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R029CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R029CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R029CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R029CFD7XKSA1?

IPW65R029CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R029CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R029CFD7XKSA1?

For technical support, including IPW65R029CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R029CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW65R029CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R029CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R029CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R029CFD7XKSA1?

All IPW65R029CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R029CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R029CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R029CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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