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Infineon Technologies IPW65R035CFD7AXKSA1

Name: IPW65R035CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R035CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R035CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R035CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 63A TO247-3-41

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Product details

Overview

IPW65R035CFD7AXKSA1 from Infineon is a 650 V, 35 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (1.6 µC), and 1300 A/µs diF/dt capability. It is engineered for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPW65R035CFD7AXKSA1 datasheet, IPW65R035CFD7AXKSA1 pinout, IPW65R035CFD7AXKSA1 application, or IPW65R035CFD7AXKSA1 equivalent, key selection criteria include RDS(on) × Qg FOM (145 nC × 35 mΩ), Eoss (18.4 µJ @ 400 V), avalanche ruggedness (358 mJ), and AEC-Q101 qualification for automotive power conversion.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and tailored drift region doping to achieve simultaneous low conduction loss and reduced switching energy. Its integrated fast body diode features 208 ns trr and 13.1 A Irrm under 400 V, 35.8 A conditions - enabling ZVS operation in LLC and phase-shift full-bridge topologies.

The MOSFET delivers 304 A pulsed drain current and 63 A continuous current at TC = 25°C, supported by 0.41 °C/W junction-to-case thermal resistance. Gate plateau voltage is fixed at 5.7 V, and dv/dt ruggedness reaches 120 V/ns (low-side) and 70 V/ns (diode reverse recovery), ensuring robust noise immunity in high-frequency hard-switched and resonant designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 475 V in automotive OBCs while maintaining margin against transients.
R_DS(on), max	35 mΩ @ T_j = 25°C - Enables low conduction loss in 6–10 kW PFC and DC-DC stages with <1.5 W static dissipation at 35.8 A.
Q_g, typ	145 nC - Defines gate drive energy requirement; compatible with standard 1–2 A peak gate drivers at 100–300 kHz switching.
E_oss @ 400 V	18.4 µJ - Directly reduces turn-on loss in hard-switched topologies and enables higher frequency operation without efficiency penalty.
di_F/dt	1300 A/µs - Supports fast commutation in synchronous rectification and bidirectional CLLC converters with minimal voltage overshoot.
Q_rr	1.6 µC - Ultra-low reverse recovery charge minimizes body-diode losses and EMI in totem-pole PFC and resonant half-bridge configurations.
T_j max	150 °C - Rated for continuous operation in sealed automotive enclosures with active or passive heatsinking per AEC-Q101 stress profiles.

Pinout & Package

IPW65R035CFD7AXKSA1 uses the PG-TO247-3 through-hole package with isolated tab (Drain-connected). The metal tab serves as the primary thermal path and must be electrically connected to Drain potential. Mounting torque: 60 N·cm (M3/M3.5 screws).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Lead)	Gate	High-impedance control terminal; requires 10 V min. for full enhancement; RG = 3.8 Ω typical internal gate resistance.
Pin 2 (Tab)	Drain	Main high-voltage power terminal; electrically tied to metal tab; carries full load current and dissipates >90% of switching energy.
Pin 3 (Lead)	Source	Reference node for gate drive and current sensing; forms return path for body diode conduction and synchronous rectification.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive powertrain and charging systems per stress test requirements including HTGB, HTRB, and UIS.
Integrated fast body diode	trr = 208 ns, Qrr = 1.6 µC, diF/dt = 1300 A/µs - eliminates need for external SiC/Schottky anti-parallel diode in totem-pole PFC.
Lowest R_DS(on) × Q_g FOM	5.075 Ω·nC - Reduces combined conduction + switching loss, enabling >99% efficiency in 10 kW OBC PFC stages at 100 kHz.
100% UIS tested	Single-pulse avalanche energy rating of 358 mJ - ensures robustness during line surges, short-circuits, and startup faults without derating.
Optimized for ZVS topologies	E_oss = 18.4 µJ @ 400 V and Co(er) = 230 pF - enables soft turn-on in LLC and phase-shift full-bridge with minimal dead-time sensitivity.

Applications

On-Board Charger (OBC) PFC Stage

Bi-Directional DC-DC Converter

Use Scenario: Unidirectional AC/DC conversion in 11–22 kW EV on-board chargers with active clamp or totem-pole PFC.

IC Role / Device Role / Timing Role: Main switch in continuous conduction mode (CCM) PFC boost stage; handles 650 V DC-link and 35–60 A RMS input current.

Use Value: 35 mΩ R_DS(on) and 1.6 µC Q_rr reduce conduction and body-diode losses by 18% vs. prior-gen CFD devices, improving light-load efficiency above 10% load.

Use Scenario: High-frequency isolation in vehicle-to-grid (V2G) bi-directional DC-DC converters linking 400 V battery and 800 V grid interface.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shift full-bridge topology; operates at 100–200 kHz with ZVS enabled by low E_oss and fast diode.

Use Value: 18.4 µJ E_oss and 1300 A/µs diF/dt allow reliable zero-voltage switching across full load range, reducing switching loss by 32% vs. standard SJ MOSFETs.

Automotive DC Fast Charging Interface

Industrial 3-Phase PFC Module

Use Scenario: Front-end switching in liquid-cooled DC fast charging stations supporting 150–350 kW output via modular parallel PFC units.

IC Role / Device Role / Timing Role: High-side switch in interleaved 3-phase Vienna rectifier; rated for 650 V blocking and 63 A continuous current at TC = 100°C.

Use Value: AEC-Q101 qualification and 150 °C T_j max ensure long-term reliability under sustained 95% duty cycle and ambient temperatures up to 85°C.

Use Scenario: Industrial UPS and server PSU front-end using 3-level active neutral-point-clamped (ANPC) PFC with 650 V rating.

IC Role / Device Role / Timing Role: Low-side clamping switch in ANPC topology; conducts reverse current during freewheeling and blocks 650 V during regeneration.

Use Value: Integrated fast body diode with 208 ns trr eliminates need for discrete antiparallel diodes, reducing BOM count and layout area by 25% in multi-kW modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ (higher), Q_g = 125 nC (lower), same package and AEC-Q101 rating	Better trade-off for lower gate drive loss in <100 kHz designs; slightly lower efficiency at full load due to higher R_DS(on)	Select when gate driver current is limited or switching frequency is below 80 kHz and thermal margin allows higher R_DS(on).
STW65N60DM6	600 V rating, R_DS(on) = 42 mΩ, no AEC-Q101 qualification, Q_rr = 2.3 µC (higher)	Not automotive-qualified; higher Q_rr increases body-diode loss in totem-pole PFC; unsuitable for ZVS above 100 kHz	Acceptable only for industrial non-automotive PFC where AEC-Q101 is not required and efficiency targets are relaxed by ≥0.5%.

Compared with IPW65R035CFD7AXKSA1, the IPW65R041CFD7XKSA1 trades 20% higher R_DS(on) for 14% lower Q_g, favoring gate drive simplicity over peak efficiency; STW65N60DM6 lacks automotive qualification and exhibits 44% higher Q_rr, limiting its use in high-frequency resonant topologies.

Availability

IPW65R035CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bi-directional DC-DC converters, and industrial 3-phase PFC modules requiring stable component supply, automotive-grade reliability, and high-voltage switching performance.

Supply support for IPW65R035CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive and industrial power electronics.

This part belongs to the CoolMOS™ CFD7A product line, designed specifically for high-efficiency, high-reliability automotive power conversion - targeting on-board chargers, traction inverters, and DC-DC stages demanding AEC-Q101 compliance and ZVS capability.

FAQ

Is IPW65R035CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that assessment of potential linear-mode use requires direct technical consultation with Infineon sales. The MOSFET is optimized for switched-mode applications only, with safe operating area defined for pulse durations up to 1 ms at TC = 25°C.

What is the maximum recommended gate resistor for hard-switched PFC applications?

For hard-switched totem-pole PFC at 100 kHz, a gate resistor of 1.8 Ω is validated in the datasheet (Table 9 test condition). Using >3.8 Ω risks excessive turn-on delay and increased switching loss; <1.2 Ω may cause gate oscillation due to interaction with L_GS and 3.8 Ω intrinsic gate resistance.

Does the PG-TO247-3 package require thermal compound between tab and heatsink?

Yes. The metal tab is electrically connected to Drain and serves as the primary thermal path. Infineon specifies thermal resistance R_thJC = 0.41 °C/W assuming proper mounting with thermally conductive interface material (e.g., silicone grease or phase-change pad) and 60 N·cm screw torque. Omitting compound increases effective R_thJC by ≥40%.

How does the body diode performance compare to discrete SiC Schottky diodes in 400 V systems?

At 35.8 A and 25°C, V_SD = 1.1 V and trr = 208 ns - comparable forward drop to 650 V SiC Schottky diodes but with higher trr than SiC (typically <30 ns). However, its integrated nature eliminates parasitic inductance, making it superior for high-diF/dt commutation where layout-induced ringing dominates system EMI.

IPW65R035CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 63A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35mOhm @ 35.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.79mA

Gate Charge (Qg) (Max) @ Vgs:: 145 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7149 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 305W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R035CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R035CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R035CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R035CFD7AXKSA1 reliable?

The price and inventory of IPW65R035CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R035CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R035CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R035CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R035CFD7AXKSA1?

IPW65R035CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R035CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R035CFD7AXKSA1?

For technical support, including IPW65R035CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R035CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R035CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R035CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R035CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R035CFD7AXKSA1?

All IPW65R035CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R035CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R035CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R035CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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