Infineon Technologies IPW65R041CFD7XKSA1

Overview

IPW65R041CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET with 41 mΩ max R_DS(on), ultra-fast body diode (d_iF/dt = 1300 A/µs), and optimized for zero-voltage switching in LLC and phase-shift full-bridge topologies. It delivers 211 A pulsed drain current, 102 nC total gate charge, and operates up to 150 °C junction temperature in industrial SMPS for server, telecom, EV charging, and solar inverters.

For engineers reviewing the IPW65R041CFD7XKSA1 datasheet, IPW65R041CFD7XKSA1 pinout, IPW65R041CFD7XKSA1 application, or IPW65R041CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss at 400 V (14.0 µJ), thermal resistance (R_thJC = 0.55 °C/W), and gate plateau voltage (5.7 V) for ZVS timing control.

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology to achieve low R_DS(on) with reduced temperature dependency and high d_iF/dt capability. Its internal body diode enables robust hard-switching recovery with trr = 177–265.5 ns and Q_rr = 1.2–2.4 µC under 400 V reverse bias and 100 A/µs diF/dt.

The MOSFET features low effective output capacitance (Co(er) = 175 pF) and fast switching dynamics: td(on) = 34 ns, tf = 3 ns, and E_oss optimized for resonant converters. Gate resistance is 3.8 Ω, supporting stable drive with external gate resistors or totem-pole configurations for paralleling.

Key Specifications

Pinout & Package

IPW65R041CFD7XKSA1 is housed in PG-TO247-3 package with isolated mounting screw hole and standard TO-247 mechanical footprint. The package supports high-current PCB mounting and direct heatsink attachment via M3/M3.5 screws (60 Ncm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Compared with IPW65R041CFD7XKSA1, IPW65R045C7 trades 10% higher R_DS(on) for 10% lower Q_g, while STP65N6F7 lacks d_iF/dt validation and exhibits higher E_oss, limiting ZVS range in high-frequency resonant converters.

Availability

IPW65R041CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified industrial reliability.

Supply support for IPW65R041CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7 family, engineered specifically for high-efficiency resonant power conversion in industrial SMPS, where ultra-fast body diode performance and low E_oss are critical for ZVS operation.

FAQ

What is the maximum continuous drain current for IPW65R041CFD7XKSA1 at 100 °C case temperature?

The maximum continuous drain current is 32 A at T_C = 100 °C, limited by junction temperature (T_j ≤ 150 °C). This value is derived from thermal derating curves and validated under steady-state conduction with proper heatsinking. It reflects real-world thermal constraints rather than idealized silicon limits.

Can IPW65R041CFD7XKSA1 be paralleled, and what gate drive precautions are required?

Yes, it supports paralleling with ferrite beads on each gate line or discrete totem-pole drivers to suppress oscillation and ensure current sharing. The low R_DS(on) temperature coefficient (1.8× increase from 25 °C to 150 °C) enhances inherent current balancing, but layout symmetry and individual gate resistance matching remain essential.

How does the body diode performance compare to previous CoolMOS™ generations?

This CFD7 device achieves d_iF/dt = 1300 A/µs and trr = 177–265.5 ns - 2.1× faster d_iF/dt and 35% lower Q_rr than CFD2. These improvements enable reliable hard commutation without snubbers in phase-shift full-bridge and reduce reverse recovery losses in bidirectional topologies.

Is IPW65R041CFD7XKSA1 suitable for 800 V DC-link applications?

No - its rated V_DS is 650 V with 700 V transient capability. For 800 V DC-link systems, a 900 V or 1000 V device is required. Using this part risks avalanche failure during line surges or startup transients; it is validated only for ≤400 V nominal bus operation in LLC/PSFB topologies.