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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R041CFDFKSA2

Name: IPW65R041CFDFKSA2
Brand: Infineon Technologies
SKU: IPW65R041CFDFKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R041CFDFKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R041CFDFKSA2.pdf

Description:: MOSFET N-CH 650V 68.5A TO247-3

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Product details

Overview

IPW65R041CFDFKSA2 from Infineon Technologies is a 650 V, 68.5 A (T_C = 25°C) superjunction N-channel power MOSFET in TO-247 package, featuring R_DS(on) = 0.041 Ω, Q_g = 300 nC, and ultra-fast body diode with t_rr = 250 ns - engineered for high-efficiency resonant switching in server SMPS and telecom rectifiers.

For engineers reviewing the IPW65R041CFDFKSA2 datasheet, IPW65R041CFDFKSA2 pinout, IPW65R041CFDFKSA2 application, or IPW65R041CFDFKSA2 equivalent, key selection criteria include commutation ruggedness (di/dt = 900 A/µs), E_oss = 22.5 µJ at 400 V, and industrial-grade JEDEC qualification per J-STD-20/JESD22.

Technical Context

This CoolMOS™ CFD2 device implements a charge-compensated superjunction structure enabling simultaneous low conduction loss (R_DS(on) × Q_g FOM = 12.3 Ω·nC) and fast, soft reverse recovery (Q_rr = 1.9 µC, I_rrm = 15 A). Its gate plateau voltage of 6.5 V supports stable 10 V gate drive in hard-switched and LLC topologies.

The integrated body diode delivers 900 A/µs commutation robustness under hard-reverse recovery, validated at V_DS = 400 V and I_F = 49.6 A. Thermal resistance R_thJC = 0.25 °C/W ensures efficient heat transfer to heatsinks in high-power density designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - rated blocking voltage for primary-side switching in 400 V DC bus applications like telecom rectifiers and solar inverters
R_DS(on),max	0.041 Ω @ T_J = 25°C - enables <1.4 W conduction loss at 68.5 A, reducing heatsink requirements
Q_g,typ	300 nC - determines gate drive power and switching speed; compatible with standard 1–2 A peak gate drivers
E_oss@400V	22.5 µJ - quantifies turn-on energy loss during zero-voltage switching transitions in LLC resonant converters
t_rr	250 ns - short reverse recovery time minimizes shoot-through risk and diode-induced switching loss in half-bridge configurations
I_D,pulse	255 A - supports high-current transient handling during overload or startup in server power supplies
R_thJC	0.25 °C/W - allows 500 W power dissipation with ≤125°C junction rise above case, critical for forced-air-cooled 3 kW designs

Pinout & Package

Package: PG-TO247 (standard TO-247-3L, non-isolated, full-molded plastic case with drain-connected tab).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (left)	Gate	Control terminal; requires 10 V nominal drive; gate resistance R_G = 0.7 Ω limits ringing in high-dv/dt environments
Pin 2 (center)	Drain	Main high-side current path; electrically connected to metal tab - must be insulated from heatsink unless referenced to same potential
Pin 3 (right)	Source	Power return and gate reference node; forms common source connection in N-channel high-side switch configurations

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 250 ns, Q_rr = 1.9 µC - enables reliable synchronous rectification and ZVS operation without external SiC diodes
High commutation ruggedness	di/dt = 900 A/µs - withstands rapid current reversal in LLC and phase-shifted full-bridge converters without failure
Low figure-of-merit	R_DS(on) × Q_g = 12.3 Ω·nC - balances conduction and switching losses for optimal efficiency across 50–500 kHz operation
Industrial qualification	JEDEC J-STD-20 & JESD22 compliant - guaranteed reliability over -55°C to +150°C operating range for telecom and server deployments

Applications

Server SMPS

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW, 96% efficient LLC resonant converter for AI server power supplies.

IC Role / Device Role / Timing Role: High-side N-channel MOSFET operating at 300–400 kHz with ZVS turn-on enabled by ultra-low E_oss.

Use Value: Reduces total switching loss by 35% vs. prior-generation SJ-MOSFETs, lowering thermal load on 1U chassis airflow design.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Main switching element handling 60 A RMS output current with hard commutation at 100–200 kHz.

Use Value: 900 A/µs di/dt rating prevents failure during line transients, extending field lifetime beyond 10 years.

LCD TV Power

Solar Inverter

Use Scenario: PFC boost switch and main inverter switch in dual-stage 250 W LCD TV power supply.

IC Role / Device Role / Timing Role: Fast-switching MOSFET in continuous conduction mode (CCM) PFC and quasi-resonant flyback stages.

Use Value: Low Q_g and soft body diode reduce audible noise and EMI filter size while meeting CoC Tier 2 efficiency targets.

Use Scenario: DC-DC isolation stage in string-level solar microinverter with 600 V input.

IC Role / Device Role / Timing Role: High-voltage switch in interleaved flyback or active-clamp forward topology operating up to 150 kHz.

Use Value: 650 V rating and 150°C max junction temperature support unattended outdoor deployment in desert climates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R045C7	R_DS(on) = 0.045 Ω, Q_g = 260 nC, E_oss = 20.5 µJ - slightly higher R_DS(on) but lower gate charge and E_oss	Better suited for higher-frequency (>400 kHz) ZVS designs where gate drive loss dominates	Select when prioritizing switching efficiency over conduction loss in compact, air-cooled enclosures
STW65N60DM2	R_DS(on) = 0.042 Ω, Q_g = 320 nC, t_rr = 320 ns - higher Q_g and slower body diode than CFD2	Requires stronger gate driver and snubbing in hard-commutated topologies	Choose only if legacy design reuse or ST ecosystem alignment outweighs diode performance trade-offs

Compared with IPW65R041CFDFKSA2, IPW65R045C7 offers lower switching loss at cost of 12% higher conduction loss, while STW65N60DM2 introduces 28% longer t_rr and increased gate drive demand - making the original CFD2 optimal for balanced resonant SMPS where both conduction and commutation robustness are critical.

Availability

IPW65R041CFDFKSA2 is available at Aetrix Electronics and suitable for server SMPS, telecom rectifiers, and solar DC-DC converters requiring stable component supply, long-lifecycle assurance, and industrial-grade reliability.

Supply support for IPW65R041CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and R&D centers across Europe, Asia, and the Americas.

The CoolMOS™ CFD2 product line was developed to address efficiency and reliability gaps in resonant and soft-switching power supplies, targeting high-density server, telecom, and renewable energy applications demanding ultra-fast body diodes and high dv/dt immunity.

FAQ

What is the maximum recommended gate resistor value for reliable switching?

A 1.8 Ω gate resistor is specified in the datasheet for dynamic characterization (t_d(on), t_r). For production use, values between 1.5 Ω and 5.6 Ω balance switching speed, EMI, and gate oscillation suppression. Higher values increase turn-on delay and reduce di/dt stress but raise switching loss - 3.3 Ω is typical for 300 kHz LLC designs.

Can IPW65R041CFDFKSA2 be paralleled with identical units?

Yes, but gate drive must be individually isolated per device using ferrite beads or separate totem-pole drivers to prevent oscillation and current imbalance. The datasheet explicitly recommends this approach for paralleling, citing matching R_DS(on) tolerance (±20%) and thermal coupling effects that require symmetrical PCB layout and heatsinking.

Does this MOSFET require a negative gate turn-off voltage?

No - the device operates reliably with 0 V to 10 V gate drive and has no requirement for negative turn-off bias. Its V_GS(th) = 3.5–4.5 V and gate plateau at 6.5 V ensure clean turn-on at 10 V while maintaining noise immunity; negative voltage is unnecessary and not specified in any test condition.

What is the safe operating area (SOA) limitation at T_C = 80°C?

At T_C = 80°C, the DC SOA limit is 43.3 A at V_DS = 10 V, de-rating linearly to ~12 A at V_DS = 400 V. Pulse capability remains 255 A for t_p ≤ 10 µs. This reflects thermal constraints - the 0.25 °C/W R_thJC limits sustained power to ~310 W at 80°C case temperature.

IPW65R041CFDFKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 68.5A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 41mOhm @ 33.1A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 3.3mA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8400 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R041CFDFKSA2 FAQ

1.How can I place an order for IPW65R041CFDFKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R041CFDFKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R041CFDFKSA2 reliable?

The price and inventory of IPW65R041CFDFKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R041CFDFKSA2 is usually 5 days.

3.What payment methods are accepted for IPW65R041CFDFKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R041CFDFKSA2 transactions.

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4.How is shipping managed for IPW65R041CFDFKSA2?

IPW65R041CFDFKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R041CFDFKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R041CFDFKSA2?

For technical support, including IPW65R041CFDFKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R041CFDFKSA2 requirements.

6.How does Aetrix verify that IPW65R041CFDFKSA2 is sourced from the original manufacturer or authorized distributors?

All IPW65R041CFDFKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R041CFDFKSA2 meets industry standards.

7.What is the process for return or replacement of IPW65R041CFDFKSA2?

All IPW65R041CFDFKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R041CFDFKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R041CFDFKSA2 part is unused and in its original packaging.

Return procedure for IPW65R041CFDFKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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