Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R048CFDAFKSA1

Name: IPW65R048CFDAFKSA1
Brand: Infineon Technologies
SKU: IPW65R048CFDAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW65R048CFDAFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R048CFDAFKSA1.pdf

Description:: MOSFET N-CH 650V 63.3A TO247-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:284

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW65R048CFDAFKSA1 from Infineon Technologies is a 650V automotive-grade superjunction MOSFET in TO-247 package, featuring R_DS(on) = 0.048 Ω (max), Q_g = 270 nC (typ), and E_oss = 20.5 µJ at 400 V. It delivers ultra-fast body diode recovery (t_rr = 240 ns, Q_rr = 1.8 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling reliable operation in resonant LLC and phase-shifted full-bridge converters for on-board chargers and DC-DC converters.

For engineers reviewing the IPW65R048CFDAFKSA1 datasheet, IPW65R048CFDAFKSA1 pinout, IPW65R048CFDAFKSA1 application, or IPW65R048CFDAFKSA1 equivalent, key selection criteria include its AEC-Q101 qualification, low FOM (R_DS(on) × Q_g), robust avalanche energy rating (E_AS = 1943 mJ), and thermal resistance (R_thJC = 0.25 K/W), critical for high-efficiency, thermally constrained automotive power stages.

Technical Context

This CoolMOS™ CFDA device implements a charge-compensated superjunction structure optimized for high-voltage switching with minimized conduction and switching losses. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support stable drive under noisy automotive conditions.

The integrated ultra-fast body diode enables hard-switched and resonant topologies without external SiC/Schottky anti-parallel diodes. Its dv/dt ruggedness (50 V/ns) and repetitive avalanche rating (I_AR = 12.7 A) ensure reliability in high-dV/dt environments like motor drives and bidirectional converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage suitable for 400 V AC rectified bus applications with margin.
R_DS(on)	0.048 Ω (max) - Enables low conduction loss at 63.3 A continuous drain current (T_C = 25°C).
Q_g	270 nC (typ) - Determines gate drive power and switching speed; supports efficient 100–300 kHz operation.
E_oss	20.5 µJ @ 400 V - Low stored output capacitance energy reduces turn-on loss in ZVS circuits.
t_rr	240 ns - Fast reverse recovery minimizes diode switching loss and ringing in bridge-leg commutation.
I_F	63.3 A (continuous) - Supports high-current half-bridge legs without parallel devices in compact OBC designs.
R_thJC	0.25 K/W - Enables high power dissipation (500 W at T_C = 25°C) with minimal junction-to-case temperature rise.

Pinout & Package

Package: PG-TO247 (3-pin, non-isolated, full-molded plastic case). Standard leadframe construction with drain-connected tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance MOSFET gate requiring <10 V drive; R_G = 0.6 Ω limits ringing during fast transitions.
Pin 2 (Drain)	High-side power terminal	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground-referenced.
Pin 3 (Source)	Power return / reference node	Serves as gate drive reference and current sense point; low-inductance layout critical for EMI control.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 240 ns, Q_rr = 1.8 µC - Eliminates need for external diode in synchronous rectification and allows ZVS in LLC.
High commutation ruggedness	di/dt = 900 A/µs - Withstands rapid current reversal in hard-switched bridge legs without failure.
AEC-Q101 qualified	Qualified for automotive powertrain and charging systems - meets stress test requirements for temperature cycling, HTRB, and UIS.
Low figure-of-merit	R_DS(on) × Q_g = 12.96 Ω·nC - Balances conduction and switching loss for optimal efficiency at 200–300 kHz.
Green package	RoHS-compliant, Pb-free plating, halogen-free mold compound - satisfies automotive environmental compliance (ELV, IMDS).

Applications

On-Board Charger (OBC)

High-Voltage DC-DC Converter

Use Scenario: 3.3–22 kW bidirectional OBC converting AC grid to 400/800 V battery bus.

IC Role / Device Role / Timing Role: Primary-side high-side switch in phase-shifted full-bridge topology operating at 100–200 kHz.

Use Value: Low E_oss and fast t_rr reduce switching loss by >15% vs. standard SJ MOSFETs, improving peak efficiency to >96%.

Use Scenario: Isolated 800 V to 48 V/12 V conversion for vehicle domain controllers and ADAS ECUs.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier or primary-side switch in active-clamp forward or LLC resonant converter.

Use Value: Ultra-low R_DS(on) and robust body diode enable single-device operation without paralleling, reducing BOM count and PCB area.

Industrial Motor Drive Inverter

Renewable Energy Inverter

Use Scenario: 7.5–15 kW HVAC and pump inverters with 650 V DC link.

IC Role / Device Role / Timing Role: High-side IGBT replacement in 3-phase inverter leg, driven with 15 V gate voltage.

Use Value: AEC-Q101 qualification and 150°C T_j rating allow operation in uncooled enclosures up to 85°C ambient.

Use Scenario: String-level solar microinverters and EV charging station PFC + inverter stages.

IC Role / Device Role / Timing Role: Boost switch in continuous conduction mode (CCM) PFC front-end and H-bridge switch in inverter stage.

Use Value: High dv/dt ruggedness (50 V/ns) prevents false turn-on during fast transients in unshielded PV environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R045CP	R_DS(on) = 0.045 Ω (lower), Q_g = 290 nC (higher), no AEC-Q101 qualification	Targeted at industrial SMPS, not automotive; lacks automotive stress test validation	Select when highest efficiency at light load is prioritized and automotive qualification is unnecessary.
STW65N60DM6	R_DS(on) = 0.042 Ω, Q_g = 240 nC, t_rr = 320 ns, AEC-Q101 qualified	Slower body diode recovery increases commutation loss in resonant topologies	Prefer for hard-switched PFC where lower Q_g reduces drive loss, but avoid in ZVS LLC.

Compared with IPW65R048CFDAFKSA1, IPW65R045CP trades higher gate charge for marginally lower conduction loss and forfeits automotive qualification, while STW65N60DM6 offers lower Q_g but compromises diode speed-making the CFDA variant optimal for resonant, automotive-grade designs demanding both ruggedness and efficiency.

Availability

IPW65R048CFDAFKSA1 is available at Aetrix Electronics and suitable for on-board chargers, high-voltage DC-DC converters, and industrial motor drives requiring stable component supply, long-term lifecycle assurance, and AEC-Q101-compliant performance.

Supply support for IPW65R048CFDAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The CoolMOS™ CFDA series targets high-efficiency, high-reliability 650 V power conversion in automotive electrification systems, emphasizing fast body diode performance and ruggedness in resonant and hard-switched topologies.

FAQ

What is the maximum continuous drain current for IPW65R048CFDAFKSA1 at 100°C case temperature?

The maximum continuous drain current is 40 A at T_C = 100°C, derated from 63.3 A at 25°C per the thermal limit defined by R_thJC = 0.25 K/W and maximum junction temperature of 150°C. This value assumes proper heatsinking and steady-state thermal equilibrium.

Is IPW65R048CFDAFKSA1 suitable for zero-voltage switching (ZVS) topologies?

Yes - its low E_oss (20.5 µJ at 400 V) and ultra-fast body diode (t_rr = 240 ns, Q_rr = 1.8 µC) are specifically optimized for ZVS operation in LLC and phase-shifted full-bridge converters, minimizing turn-on loss and ensuring reliable soft-switching across load ranges.

Does this MOSFET require negative gate voltage for reliable turn-off in noisy automotive environments?

No - the device has a gate threshold voltage range of 3.5–4.5 V and is designed for 0–15 V gate drive. While negative turn-off (e.g., –5 V) improves noise immunity, it is not required; stable operation is achieved with 0 V turn-off and 13–15 V turn-on under AEC-Q101 stress conditions.

How does the avalanche energy rating impact design robustness in overvoltage events?

The single-pulse avalanche energy rating is 1943 mJ (at I_D = 12.7 A, V_DS = 50 V), enabling the device to absorb transient overvoltages without failure during inductive switching events. This eliminates need for external clamping in many automotive power stages, simplifying layout and improving system-level reliability.

IPW65R048CFDAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 63.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 48mOhm @ 29.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 2.9mA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7440 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 500W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R048CFDAFKSA1 FAQ

1.How can I place an order for IPW65R048CFDAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R048CFDAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R048CFDAFKSA1 reliable?

The price and inventory of IPW65R048CFDAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R048CFDAFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R048CFDAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R048CFDAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R048CFDAFKSA1?

IPW65R048CFDAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R048CFDAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R048CFDAFKSA1?

For technical support, including IPW65R048CFDAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R048CFDAFKSA1 requirements.

6.How does Aetrix verify that IPW65R048CFDAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R048CFDAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R048CFDAFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R048CFDAFKSA1?

All IPW65R048CFDAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R048CFDAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R048CFDAFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R048CFDAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …