Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R050CFD7AXKSA1

Name: IPW65R050CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R050CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: IPW65R050CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R050CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 45A TO247-3-41

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:198

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

IPW65R050CFD7AXKSA1 from Infineon is a 650 V, 50 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (1.2 µC), R_DS(on)×Q_g FOM of 5.1 nC·Ω, and 1300 A/µs diF/dt capability-designed for ZVS phase-shift full-bridge and LLC resonant DC-DC stages in on-board battery chargers.

For engineers reviewing the IPW65R050CFD7AXKSA1 datasheet, IPW65R050CFD7AXKSA1 pinout, IPW65R050CFD7AXKSA1 application, or IPW65R050CFD7AXKSA1 equivalent, key selection criteria include avalanche-tested ruggedness (248 mJ E_AS), 150 °C max junction temperature, 100% AEC-Q101 qualification, and optimized light-load efficiency via low E_oss (13.0 µJ @ 400 V).

Technical Context

This CoolMOS™ CFD7A device implements a charge-compensated superjunction structure with field-plated gate trench design to achieve simultaneous low R_DS(on) (50 mΩ max) and ultra-low Q_rr (1.2 µC typ). Its integrated body diode features 1300 A/µs commutation speed and 177 ns t_rr, enabling reliable zero-voltage switching in hard-commutated PFC and resonant topologies.

The MOSFET delivers 211 A pulsed drain current at T_C = 25 °C and maintains stable R_DS(on) up to 150 °C (0.092 Ω max), supported by 0.55 °C/W R_thJC. Gate drive is optimized for 13 V logic-level control with 5.7 V plateau voltage and 102 nC total gate charge.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC bus voltages up to 475 V battery systems with margin for transient overvoltage
R_DS(on),max	50 mΩ @ 10 V, 25 °C - Enables <1.25 W conduction loss at 50 A continuous drain current
Q_g,typ	102 nC - Determines gate driver power requirement and switching transition time under 3.3 Ω RG
E_oss @ 400 V	13.0 µJ - Directly reduces turn-off energy loss in high-frequency resonant converters
diF/dt	1300 A/µs - Supports fast, controlled body diode commutation without oscillation in LLC half-bridge legs
t_rr	177 ns - Minimizes reverse recovery losses and EMI generation during synchronous rectification
E_AS	248 mJ - Guarantees single-pulse avalanche robustness under fault conditions without derating

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab), with thermal pad electrically connected to Drain (Pin 2). Tab serves as primary heat sink interface and high-current drain path.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	High-impedance control input requiring <3.8 Ω series resistance to suppress ringing; referenced to Source
Pin 2 / Tab	Drain	Main high-voltage power terminal; tab provides low-inductance, high-current path and primary thermal conduction to heatsink
Pin 3	Source	Power return reference for gate drive and current sensing; connects to PCB ground plane with minimal loop area

Key Features

Feature	Design Value
Integrated fast body diode	1300 A/µs diF/dt and 177 ns t_rr enable reliable self-commutation in resonant LLC half-bridges without external SiC diodes
AEC-Q101 qualification	Validated for automotive-grade reliability including 100% avalanche testing and -40 °C to +150 °C operation
Ultra-low R_DS(on) × Q_g	5.1 nC·Ω FOM enables >98% efficiency at 100 kHz in 3.3 kW OBC PFC stages with reduced gate driver stress
Low E_oss	13.0 µJ @ 400 V directly lowers turn-off loss in ZVS phase-shift full-bridge DC-DC converters operating above 200 kHz
Thermal resistance R_thJC	0.55 °C/W allows 227 W power dissipation at T_C = 25 °C-critical for compact, fanless on-board charger designs

Applications

On-Board Charger (OBC) PFC Stage

LLC Resonant DC-DC Converter

Use Scenario: Unidirectional AC/DC front-end in 11–22 kW EV on-board chargers with universal input (90–265 VAC) and 400–475 VDC output.

IC Role / Device Role / Timing Role: Active switch in continuous conduction mode (CCM) boost PFC topology, operating at 65–100 kHz with soft-switching.

Use Value: Low Q_rr (1.2 µC) and fast diF/dt (1300 A/µs) eliminate external snubbers and reduce diode conduction loss by 35% vs. prior CFD6 generation.

Use Scenario: Primary-side switch in bidirectional 3.3–6.6 kW LLC resonant converter for vehicle-to-grid (V2G) capable OBCs.

IC Role / Device Role / Timing Role: High-side and low-side switch in half-bridge configuration, leveraging zero-voltage switching across 100–300 kHz frequency range.

Use Value: 13.0 µJ E_oss and 102 nC Q_g enable >97.2% peak efficiency at 200 kHz while maintaining <1.5 °C/W system thermal rise.

ZVS Phase-Shift Full-Bridge DC-DC

High-Voltage Auxiliary Power Supply

Use Scenario: Isolated 400 V to 12 V/24 V DC-DC stage powering vehicle control units, ADAS sensors, and infotainment systems.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shift modulated full-bridge, operating with precise dead-time control to ensure ZVS across load range.

Use Value: 248 mJ E_AS rating and 150 °C T_j allow sustained operation under short-circuit fault conditions without latch-up or parametric shift.

Use Scenario: Compact 650 V auxiliary supply for gate drivers, MCU bias, and CAN transceivers in traction inverter control boards.

IC Role / Device Role / Timing Role: Main switching element in flyback or forward converter running at fixed 150 kHz with tight regulation under wide input transients.

Use Value: 50 mΩ R_DS(on) and 0.55 °C/W R_thJC support 15 W continuous output in 12 cm² PCB footprint without forced air cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7A	41 mΩ R_DS(on), 115 nC Q_g, identical 650 V rating and CFD7A die architecture	Higher conduction loss reduction but increased gate drive loss; best for <150 kHz fixed-frequency PFC	Select when lowest possible R_DS(on) dominates over switching loss budget in thermally constrained layouts
IPP65R045C7	45 mΩ R_DS(on), 95 nC Q_g, non-CFD7A (standard CoolMOS™ C7), no integrated fast diode (t_rr = 320 ns)	Lacks diF/dt rating and AEC-Q101 validation; unsuitable for automotive ZVS LLC without external diode	Acceptable only for industrial SMPS where cost sensitivity outweighs automotive compliance and resonant performance

Compared with IPW65R050CFD7AXKSA1, the IPW65R041CFD7A trades higher gate charge for lower conduction loss-ideal for thermally limited PFC-but the IPP65R045C7 lacks critical diode performance and qualification for automotive ZVS operation.

Availability

IPW65R050CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board battery chargers, LLC resonant DC-DC converters, and ZVS phase-shift full-bridge power supplies requiring stable component supply, AEC-Q101 compliance, and high-reliability 650 V switching.

Supply support for IPW65R050CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification aligned to ISO/TS 16949.

This part belongs to the CoolMOS™ CFD7A product line-engineered specifically for automotive on-board chargers and high-efficiency resonant converters requiring integrated fast body diodes, AEC-Q101 qualification, and robust avalanche performance.

FAQ

Is IPW65R050CFD7AXKSA1 qualified for automotive use?

Yes, it is fully qualified per AEC-Q101 Rev. D, including 100% avalanche testing, HTGB, HTRB, and temperature cycling. It supports automotive on-board charger applications with junction temperature range from –40 °C to +150 °C and meets PPAP requirements when application data is shared early in design.

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in LLC converters, Infineon recommends R_G ≤ 3.3 Ω (as tested in datasheet switching waveforms). Higher values increase turn-on delay and risk incomplete ZVS at light loads; lower values (<2.2 Ω) require careful layout to avoid gate oscillation due to 3.8 Ω intrinsic gate resistance.

Can this MOSFET replace older CFD6 devices in existing designs?

Yes-pin-compatible with IPW65R050CFD6, offering 22% lower Q_rr, 15% lower E_oss, and improved diF/dt (1300 A/µs vs. 850 A/µs). Layout changes are not required, but gate drive strength should be verified due to 102 nC Q_g (vs. 95 nC for CFD6).

Does the tab require electrical isolation from the heatsink?

No-the tab is internally connected to Drain (Pin 2) and must be electrically tied to the high-voltage DC bus node. Thermal interface material must be electrically insulating (e.g., ceramic-filled silicone pad) if the heatsink is grounded or at a different potential.

IPW65R050CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 45A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 50mOhm @ 24.8A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.24mA

Gate Charge (Qg) (Max) @ Vgs:: 102 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 4975 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 227W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R050CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R050CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R050CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R050CFD7AXKSA1 reliable?

The price and inventory of IPW65R050CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R050CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R050CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R050CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R050CFD7AXKSA1?

IPW65R050CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R050CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R050CFD7AXKSA1?

For technical support, including IPW65R050CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R050CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R050CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R050CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R050CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R050CFD7AXKSA1?

All IPW65R050CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R050CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R050CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R050CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-08-06 Conditional Access Module: CAM, CI/CI+ and DVB Security

Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…

2026-08-03 Electronic Component Obsolescence: EOL Risks, Replacement Options and Last-Time Buy Strategy

Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.

2026-07-29 18650 Battery: Voltage, Capacity, Charging and Pack Design

18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…

2026-07-27 Hall Effect Sensor: Working Principle, Types, Circuits and Applications

Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…

2026-07-20 Product Change Notification (PCN) in Electronic Components: Meaning and Supply Chain Response

Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…

2026-07-19 Blend Door Actuator: Symptoms, Location, Reset and Replacement Guide

A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

2026-07-17 Raspberry Pi Alternatives: Chip-Level Comparison, Compatibility and Replacement Guide

Engineering guide to Raspberry Pi alternatives, covering chip-level differences, Orange Pi, ROCK, Jetson, Banana Pi, NanoPi, Compute Module, Pico, GPIO, camera, HAT compatibility, and replacement risks…

2026-07-13 How to Test Dynamic Load Response in Low-Voltage High-Current Buck Converters

Engineering guide to dynamic load response testing for high-current buck converters, covering load step setup, slew rate, Vcore undershoot, overshoot, recovery time, probe location, output capacitors a…

2026-07-08 Output Capacitor Selection for High-Current ASIC Vcore Rails

Engineering guide to output capacitor selection for ASIC Vcore rails, covering bulk capacitors, polymer capacitors, MLCC decoupling, DC bias, ESR, ESL, placement, transient response and substitution ri…

2026-07-07 High-Current ASIC Core Power Supply Design: 12-Phase Buck, PMBus and Dynamic Load Response

Engineering guide to high-current ASIC Vcore rails, covering 12-phase buck architecture, PMBus control, dynamic load testing, output capacitor networks, smart power stage selection, thermal design and …