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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R075CFD7AXKSA1

Name: IPW65R075CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R075CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R075CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R075CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 32A TO247-3-41

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Product details

Overview

IPW65R075CFD7AXKSA1 from Infineon is a 650 V, 75 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Qrr (0.86 µC), and 1300 A/µs diF/dt capability. It is designed for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPW65R075CFD7AXKSA1 datasheet, IPW65R075CFD7AXKSA1 pinout, IPW65R075CFD7AXKSA1 application, or IPW65R075CFD7AXKSA1 equivalent, key selection criteria include R_DS(on) stability over temperature, E_oss (8.8 µJ @ 400 V), avalanche ruggedness (164 mJ), and diode commutation speed-critical for ZVS phase-shift full-bridge and LLC topologies.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and trench depth to achieve best-in-class R_DS(on) × Q_g (5.1 nC·Ω) and R_DS(on) × E_oss (0.66 µJ·Ω) figures of merit. Its integrated fast-recovery body diode features t_rr = 156 ns and Q_rr = 0.86 µC under 100 A/µs diF/dt conditions.

The MOSFET is fully qualified per AEC-Q101, 100% avalanche tested, and rated for continuous operation at T_j = 150 °C. Thermal resistance R_thJC is 0.73 °C/W, enabling high-power density designs in automotive on-board chargers and industrial PFC modules.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Supports 475 V battery systems with margin for voltage transients in automotive DC-DC and PFC applications.
R_DS(on), max	75 mΩ @ T_j = 150 °C - Enables low conduction loss in high-current unidirectional/bidirectional converters.
Q_g, typ	68 nC - Low gate charge reduces driver power demand and enables efficient 100–300 kHz switching in resonant topologies.
E_oss @ 400 V	8.8 µJ - Minimizes turn-off energy loss and supports soft-switching in LLC and phase-shifted full-bridge converters.
diF/dt rating	1300 A/µs - Ensures robust body diode commutation during hard- and soft-switching transitions without oscillation or failure.
I_D,pulse	139 A - Sustains peak currents during transient load steps in on-board charger boost and isolation stages.
T_j,max	150 °C - Rated for continuous operation in under-hood automotive environments with validated thermal derating curves.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Internal body diode anode connects to Source, cathode to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive; plateau voltage 5.7 V ensures stable Miller region control during switching.
Pin 2 (Tab / Drain)	High-side power output	Electrically connected to heatsink; carries full load current and must be thermally coupled to chassis ground.
Pin 3 (Source)	Reference node	Serves as return path for gate drive and sense reference; requires low-inductance layout to suppress ringing.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.86 µC and t_rr = 156 ns enable zero-voltage switching without external SiC diodes in LLC half-bridge.
AEC-Q101 qualification	Validated for automotive under-hood use including temperature cycling, humidity, and mechanical shock per JEDEC standards.
Ultra-low FOM R_DS(on) × E_oss	0.66 µJ·Ω - Reduces total switching loss by >25% vs. prior CFD generation at 200 kHz in 3.3 kW PFC stage.
100% single-pulse avalanche tested	E_AS = 164 mJ @ I_AS = 5.1 A - Guarantees ruggedness against inductive turn-off transients in motor drive and converter protection.
Optimized for 475 V battery systems	Robust dv/dt immunity (120 V/ns) and extended T_j range support next-gen EV architectures with higher pack voltages.

Applications

On-Board Charger (OBC) Boost Stage

LLC Resonant DC-DC Converter

Use Scenario: Unidirectional 3.3–22 kW AC/DC conversion with active PFC front-end feeding isolated LLC stage.

IC Role / Device Role / Timing Role: High-side switch in continuous conduction mode (CCM) boost converter; handles 32 A continuous drain current at 100 kHz.

Use Value: Low R_DS(on) and ultra-low Q_rr reduce conduction + recovery losses, enabling >98.5% PFC efficiency at full load.

Use Scenario: Primary-side switch in 6.6 kW bi-directional LLC converter for vehicle-to-grid (V2G) and grid-to-vehicle (G2V) operation.

IC Role / Device Role / Timing Role: Resonant switch operating in ZVS region; leverages fast body diode for synchronous rectification during dead-time.

Use Value: 1300 A/µs diF/dt and low E_oss ensure reliable soft-switching across wide input voltage range (200–475 V).

ZVS Phase-Shift Full-Bridge (PSFB)

Bidirectional DC-DC for 48 V/400 V Architecture

Use Scenario: Isolated DC-DC interface between 400 V traction battery and 48 V mild-hybrid subsystem.

IC Role / Device Role / Timing Role: Lag-leg switch in PSFB topology; conducts during zero-voltage transition with body diode freewheeling.

Use Value: Integrated fast diode eliminates need for discrete anti-parallel SiC Schottky, reducing BOM count and layout area by 35%.

Use Scenario: Dual-active-bridge (DAB) converter enabling regenerative braking energy transfer from 400 V to 48 V bus.

IC Role / Device Role / Timing Role: High-frequency bridge arm switch operating at 150–250 kHz with bidirectional current capability.

Use Value: Symmetrical R_DS(on) drift (±15% from 25–150 °C) and low gate charge ensure balanced power distribution and thermal stability.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7A	R_DS(on) = 95 mΩ; Q_g = 58 nC; E_oss = 7.5 µJ - Higher R_DS(on) but lower switching loss.	Better suited for <10 kW PFC where conduction loss is secondary to switching loss reduction.	Select when prioritizing EMI performance and gate drive simplicity over peak efficiency at full load.
STW65N60DM6	R_DS(on) = 60 mΩ; no integrated fast diode; Q_rr = 2.1 µC - Lower R_DS(on) but slower body diode.	Requires external SiC diode for ZVS operation; increases cost and layout complexity in LLC/PSFB.	Choose only if system-level thermal design allows higher conduction loss and discrete diode integration is acceptable.

Compared with IPW65R075CFD7AXKSA1, the IPW65R095CFD7A trades 20 mΩ higher R_DS(on) for 10 nC lower Q_g and reduced E_oss, while STW65N60DM6 offers lower conduction loss but lacks the integrated fast diode essential for automotive resonant topologies.

Availability

IPW65R075CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive PFC modules requiring stable component supply, AEC-Q101 compliance, and production-grade traceability.

Supply support for IPW65R075CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7A product line-engineered specifically for high-efficiency, high-reliability automotive power conversion, with emphasis on integrated fast body diodes and robustness in 400–475 V battery architectures.

FAQ

Is IPW65R075CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Operation outside saturation or ohmic regions risks localized thermal runaway due to non-uniform current distribution across the superjunction structure.

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

For reliable ZVS in LLC topologies at 200 kHz, RG should not exceed 5.3 Ω-matching the test condition used in the datasheet's td(off) and tf measurements. Higher values increase turn-off delay and risk incomplete ZVS at light loads; lower values (<3 Ω) may cause excessive gate current overshoot and EMI.

How does the body diode performance compare to discrete SiC Schottky diodes?

This MOSFET's body diode achieves Q_rr = 0.86 µC and t_rr = 156 ns-comparable to 650 V SiC Schottkys rated for 10–20 A. While SiC diodes offer near-zero Q_rr, the integrated diode eliminates layout parasitics and reduces component count, making it preferable for space-constrained OBC modules.

Does the PG-TO247-3 package require solder paste or mechanical mounting for thermal interface?

Thermal mounting requires mechanical clamping with M3 screws at 60 Ncm torque, per datasheet Section 4 (Thermal characteristics). Soldering is prohibited on the tab; only wave-soldering is allowed on leads (1.6 mm from case, 10 s at 260 °C). Thermal interface material (TIM) must be applied between tab and heatsink.

IPW65R075CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 32A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 75mOhm @ 16.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 820µA

Gate Charge (Qg) (Max) @ Vgs:: 68 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3288 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 171W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R075CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R075CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R075CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R075CFD7AXKSA1 reliable?

The price and inventory of IPW65R075CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R075CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R075CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R075CFD7AXKSA1 transactions.

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4.How is shipping managed for IPW65R075CFD7AXKSA1?

IPW65R075CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R075CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R075CFD7AXKSA1?

For technical support, including IPW65R075CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R075CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R075CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R075CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R075CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R075CFD7AXKSA1?

All IPW65R075CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R075CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R075CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R075CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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