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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R080CFDFKSA2

Name: IPW65R080CFDFKSA2
Brand: Infineon Technologies
SKU: IPW65R080CFDFKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R080CFDFKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R080CFDFKSA2.pdf

Description:: MOSFET N-CH 650V 43.3A TO247-3

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Product details

Overview

IPW65R080CFDFKSA2 from Infineon Technologies is a 650 V, 43.3 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, featuring R_DS(on) = 0.08 Ω, Q_g = 167 nC, and E_oss = 12.5 µJ @ 400 V. It delivers ultra-fast body diode recovery (t_rr = 180 ns, Q_rr = 1 µC) and high commutation ruggedness (di/dt = 900 A/µs), optimized for resonant LLC and ZVS-PWM topologies in server PSUs and telecom rectifiers.

For engineers reviewing the IPW65R080CFDFKSA2 datasheet, IPW65R080CFDFKSA2 pinout, IPW65R080CFDFKSA2 application, or IPW65R080CFDFKSA2 equivalent, key selection criteria include body diode robustness under hard commutation, low E_oss/Q_g trade-off for soft-switching efficiency, thermal resistance (R_thJC = 0.32 °C/W), and TO-247 package mounting compatibility with industrial heatsink interfaces.

Technical Context

This device implements Infineon's superjunction (SJ) cell architecture with charge compensation trenches, enabling high-voltage blocking (650 V V_DSS) while minimizing conduction and switching losses. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support standard 10–15 V gate drivers without level-shifting.

The integrated body diode is engineered for fast, soft reverse recovery-critical in resonant converters where di/dt stress and reverse recovery energy directly impact reliability and EMI. With t_rr = 180 ns and I_RRM = 10 A, it sustains high-frequency zero-voltage switching without snubber circuits or external diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	650 V - Enables operation in 400 V AC input systems with 100% margin against line surges and ringing transients.
R_DS(on),max	0.08 Ω @ T_J = 25°C - Delivers <1.5 W conduction loss at 43.3 A DC, reducing heatsink size in high-power SMPS.
Q_g,typ	167 nC - Determines gate drive power requirement (~1.7 mW per MHz at 10 V drive); compatible with standard half-bridge drivers.
E_oss@400V	12.5 µJ - Low stored output capacitance energy enables efficient ZVS turn-on down to ~100 kHz in LLC designs.
t_rr	180 ns - Enables clean commutation in 200–500 kHz resonant converters without oscillation or shoot-through risk.
R_thJC	0.32 °C/W - Allows 120°C junction rise with only 38.4 W dissipation, supporting compact thermal design in TO-247 footprint.
I_D,pulse	137 A - Supports peak current handling during inrush or overload in server and telecom power stages.

Pinout & Package

IPW65R080CFDFKSA2 is housed in a standard TO-247 package with isolated tab (drain-connected), suitable for screw-mount heatsinking and high-current PCB layouts.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	High-impedance MOSFET gate requiring ≤1.8 Ω series resistance to damp ringing; referenced to source.
Pin 2 (Drain)	Power output node	Internally connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Pin 3 (Source)	Reference and return path	Serves as local ground for gate drive loop; critical for minimizing common-source inductance in high-dI/dt switching.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 180 ns, Q_rr = 1 µC - Eliminates need for external SiC/Schottky anti-parallel diodes in LLC half-bridges.
High commutation ruggedness	di/dt = 900 A/µs - Withstands abrupt current reversal in ZVS transitions without latch-up or thermal runaway.
Low figure-of-merit	R_DS(on) × Q_g = 13.4 Ω·nC - Balances conduction and switching loss for optimal full-load efficiency in 1–3 kW PSUs.
Industrial qualification	JEDEC J-STD-020/JESD22 compliant - Validated for 150°C operation and reflow soldering up to 260°C (10 s).

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW, 48 V output LLC resonant converter in hyperscale data center PSU.

IC Role / Device Role / Timing Role: Primary-side high-side switch in asymmetric half-bridge topology operating at 250–350 kHz.

Use Value: Low E_oss enables reliable ZVS across full load range; robust body diode prevents failure during transient overloads.

Use Scenario: 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: Main switching element in phase-shifted full-bridge stage with synchronous rectification.

Use Value: High pulsed current rating (137 A) supports surge handling; low R_DS(on) minimizes conduction loss at partial load.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Resonant flyback driver for LED backlight with dimming control and EMI constraints.

IC Role / Device Role / Timing Role: High-voltage switch in self-oscillating resonant topology operating near 100 kHz.

Use Value: Fast body diode ensures clean turn-off without voltage spikes; TO-247 package simplifies thermal management on small PCBs.

Use Scenario: 300–600 V DC input stage in single-phase microinverter with transformerless topology.

IC Role / Device Role / Timing Role: DC-link switch in H-bridge inverter leg, subject to bidirectional current and high dv/dt stress.

Use Value: 50 V/ns dv/dt ruggedness prevents false triggering; low Q_g reduces gate drive losses in high-frequency PWM modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP65N6F6	R_DS(on) = 0.065 Ω, Q_g = 150 nC, no specified t_rr or di/dt rating	Lacks documented body diode ruggedness; not validated for hard-commutated resonant topologies	Preferable only when lowest conduction loss dominates and soft-switching is not required.
IXFH60N60X3	R_DS(on) = 0.075 Ω, Q_g = 195 nC, t_rr = 220 ns, di/dt = 600 A/µs	Higher Q_g increases gate drive loss; lower di/dt rating limits usable frequency in ZVS designs	Acceptable for fixed-frequency hard-switched PFC but less optimal than IPW65R080CFDFKSA2 in LLC.

Compared with STP65N6F6 and IXFH60N60X3, IPW65R080CFDFKSA2 uniquely combines low E_oss, ultra-fast t_rr, and industry-leading di/dt ruggedness-making it the preferred choice for high-efficiency, high-reliability resonant converters where body diode performance is mission-critical.

Availability

IPW65R080CFDFKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-term industrial-grade availability, and JEDEC-qualified reliability.

Supply support for IPW65R080CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial sensors, with core expertise in silicon and wide-bandgap devices.

The CoolMOS™ CFD2 product line targets high-efficiency, high-reliability switched-mode power supplies in industrial, telecom, and renewable energy applications-specifically engineered to replace older SJ MOSFETs with superior body diode behavior and reduced system-level EMI.

FAQ

What is the maximum continuous drain current at T_C = 100°C?

The maximum continuous drain current is 27.4 A at case temperature of 100°C, as specified in Table 2 of the datasheet. This rating assumes proper heatsinking and accounts for R_DS(on) increase with junction temperature (0.187 Ω max at 150°C). Derating curves in Figure 8 confirm linear reduction from 43.3 A at 25°C to 27.4 A at 100°C.

Is the TO-247 package lead-free and RoHS compliant?

Yes, IPW65R080CFDFKSA2 uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements. The package is qualified for wave soldering at 260°C for 10 seconds at 1.6 mm from case, as verified in Table 3.

Can this MOSFET replace older CoolMOS™ CFD variants in existing designs?

Yes-IPW65R080CFDFKSA2 is a direct drop-in replacement for IPW65R080CFD (same marking, TO-247 package, identical pinout and R_DS(on)). Electrical characteristics including V_GS(th), Q_g, and t_rr are unchanged; the 'FKSA2' suffix denotes updated packaging and traceability, not functional revision.

What is the recommended gate resistor value for 300 kHz LLC operation?

A gate resistor of 1.8 Ω is recommended, matching the test condition used in datasheet dynamic parameter measurements (Table 5). This value damps gate oscillation while maintaining fast switching (t_on delay = 20 ns, t_off delay = 85 ns); values below 1.2 Ω may cause ringing, above 3.3 Ω increase switching losses disproportionately.

IPW65R080CFDFKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 43.3A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 80mOhm @ 17.6A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.8mA

Gate Charge (Qg) (Max) @ Vgs:: 167 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5030 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 391W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R080CFDFKSA2 FAQ

1.How can I place an order for IPW65R080CFDFKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R080CFDFKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R080CFDFKSA2 reliable?

The price and inventory of IPW65R080CFDFKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R080CFDFKSA2 is usually 5 days.

3.What payment methods are accepted for IPW65R080CFDFKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R080CFDFKSA2 transactions.

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4.How is shipping managed for IPW65R080CFDFKSA2?

IPW65R080CFDFKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R080CFDFKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R080CFDFKSA2?

For technical support, including IPW65R080CFDFKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R080CFDFKSA2 requirements.

6.How does Aetrix verify that IPW65R080CFDFKSA2 is sourced from the original manufacturer or authorized distributors?

All IPW65R080CFDFKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R080CFDFKSA2 meets industry standards.

7.What is the process for return or replacement of IPW65R080CFDFKSA2?

All IPW65R080CFDFKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R080CFDFKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R080CFDFKSA2 part is unused and in its original packaging.

Return procedure for IPW65R080CFDFKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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