Infineon Technologies IPW65R090CFD7XKSA1

Overview

IPW65R090CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET with 90 mΩ max R_DS(on), ultra-fast body diode (di_F/dt = 1300 A/µs), and optimized for zero-voltage switching topologies. It delivers 107 A pulsed drain current, 7.4 µJ E_oss at 400 V, and operates up to 150 °C junction temperature - deployed in industrial SMPS, server power supplies, and EV charging systems.

For engineers reviewing the IPW65R090CFD7XKSA1 datasheet, IPW65R090CFD7XKSA1 pinout, IPW65R090CFD7XKSA1 application, or IPW65R090CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, low temperature coefficient of R_DS(on), resonant topology efficiency gain, and gate charge profile (Q_g = 53 nC) for ZVS timing control.

Technical Context

This CoolMOS™ CFD7 device uses charge compensation technology to achieve low R_DS(on) × area while maintaining fast, soft reverse recovery (t_rr = 147–220.5 ns, Q_rr = 0.78–1.56 µC). Its internal body diode supports high di_F/dt without oscillation, enabling reliable operation in phase-shift full-bridge and LLC converters.

The MOSFET features a fixed gate plateau voltage of 5.7 V and exhibits minimal R_DS(on) drift over temperature (normalized R_DS(on) ≈ 1.0 at 25 °C, ~1.8 at 150 °C), supporting stable conduction loss across industrial thermal ranges. Thermal resistance R_thJC is 0.98 °C/W, confirming suitability for high-power-density heatsink-limited designs.

Key Specifications

Pinout & Package

IPW65R090CFD7XKSA1 uses PG-TO247-3 package with isolated tab (Drain-connected). The case is electrically active and thermally conductive; mounting requires insulating hardware unless Drain is at ground potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with IPW65R099CFD7 and IPP65R099C7, IPW65R090CFD7XKSA1 provides the lowest R_DS(on) in the CFD7 family with industry-leading diode commutation capability - making it optimal for new high-efficiency, high-power-density resonant converter designs where both conduction and switching losses must be minimized.

Availability

IPW65R090CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and long-term production continuity.

Supply support for IPW65R090CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in automotive, industrial, and renewable energy markets.

The CoolMOS™ CFD7 product line targets high-efficiency resonant power conversion, specifically engineered to replace older superjunction MOSFETs in ZVS topologies while delivering improved light-load efficiency and hard commutation robustness.

FAQ

What is the gate threshold voltage range for IPW65R090CFD7XKSA1?

The gate threshold voltage V_GS(th) is specified from 3.5 V to 4.5 V at T_j = 25 °C, with ID = 0.63 mA and V_DS = V_GS. This tight range ensures consistent turn-on behavior across production lots and simplifies gate driver design for 10–13 V logic-level drive without overdrive risk.

Can IPW65R090CFD7XKSA1 be paralleled with identical units?

Yes, but Infineon recommends using ferrite beads on each gate line or separate totem-pole drivers to suppress gate oscillation and ensure current sharing. The low R_DS(on) temperature coefficient (≈1.8× increase from 25 °C to 150 °C) supports stable thermal balancing under steady-state parallel operation.

Is the tab of IPW65R090CFD7XKSA1 electrically isolated?

No - the metal tab is internally connected to the Drain (Pin 2) and is not electrically isolated. When mounting, use an insulating pad or shoulder washer if the heatsink is not at Drain potential. Electrical isolation must be verified per PCB layout and thermal interface requirements.

What is the maximum recommended gate resistor value for ZVS operation?

For reliable ZVS in LLC or phase-shift full-bridge topologies, Infineon specifies R_G ≤ 5.3 Ω in test conditions (V_DD = 400 V, I_D = 12.5 A). Higher values (>10 Ω) delay turn-on and may compromise ZVS timing; lower values (<3 Ω) increase gate drive loss and EMI risk without significant efficiency gain.