Infineon Technologies IPW65R095C7XKSA1

Overview

IPW65R095C7XKSA1 from Infineon Technologies is a 650 V, 95 mΩ superjunction N-channel MOSFET in TO-247 package, optimized for hard-switching PFC and PWM stages. It delivers 45 nC total gate charge, 5.5 µJ output switching energy at 400 V, and 60 A/µs body diode commutation speed, enabling high-efficiency server and telecom power supplies.

For engineers reviewing the IPW65R095C7XKSA1 datasheet, IPW65R095C7XKSA1 pinout, IPW65R095C7XKSA1 application, or IPW65R095C7XKSA1 equivalent, key selection criteria include R_DS(on) vs. temperature stability, dv/dt ruggedness (100 V/ns), E_oss-driven soft-switching capability, and industrial-grade JEDEC qualification for 150 °C junction operation.

Technical Context

This CoolMOS™ C7 device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping profile to reduce R_DS(on) × Q_g and R_DS(on) × E_oss figures of merit. Its gate plateau voltage is fixed at 5.4 V, supporting robust 13 V gate drive with low Miller feedback.

The MOSFET features enhanced avalanche ruggedness (118 mJ single-pulse E_AS) and reverse diode dI_F/dt rating of 60 A/µs, enabling reliable operation in discontinuous conduction mode (DCM) and critical conduction mode (CrCM) PFC topologies without external snubbers.

Key Specifications

Pinout & Package

IPW65R095C7XKSA1 is housed in a standard PG-TO247 package with isolated tab (Drain-connected). The package provides low thermal resistance (R_thJC = 0.98 °C/W) and mechanical compatibility with existing heatsink mounting hardware using M3/M3.5 screws (60 Ncm torque).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Compared with STW65N60DM6 and IXTH50N65X2, IPW65R095C7XKSA1 offers superior trade-off between R_DS(on) stability over temperature, E_oss-driven efficiency, and dv/dt immunity-making it optimal for high-density, high-efficiency PFC and resonant converters requiring consistent performance across -40 to 125 °C ambient.

Availability

IPW65R095C7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar string inverters requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPW65R095C7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure.

The CoolMOS™ C7 product line targets high-efficiency, high-power-density AC-DC and DC-DC conversion systems, emphasizing reduced switching losses, improved thermal robustness, and simplified gate drive design for industrial and computing power applications.

FAQ

What is the maximum continuous drain current at 100 °C case temperature?

The IPW65R095C7XKSA1 supports 15 A continuous drain current at T_C = 100 °C, as specified in Table 2 of the Rev. 2.0 datasheet. This rating accounts for R_DS(on) increase with junction temperature and thermal derating based on R_thJC = 0.98 °C/W and maximum T_j = 150 °C.

Is the TO-247 package lead-free and RoHS compliant?

Yes. The IPW65R095C7XKSA1 uses Pb-free plating and halogen-free mold compound, meeting RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 1 requirements. The "XKSA1" suffix explicitly denotes lead-free, halogen-free, and industrial-grade qualification.

Can this MOSFET be paralleled for higher current handling?

Yes, but with specific layout precautions: use individual ferrite beads on each gate line or separate totem-pole drivers to suppress gate oscillation, match gate resistor values within ±5 %, and ensure symmetrical PCB trace lengths and thermal coupling to avoid current imbalance and thermal runaway.

Does the body diode support zero-voltage switching in CrCM PFC?

Yes. With 60 A/µs dI_F/dt rating, 9 µC Q_rr, and soft reverse recovery (trr = 800 ns), the intrinsic body diode enables reliable zero-current switching in critical conduction mode PFC without external SiC diodes-reducing BOM count and layout complexity.