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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R099CFD7AXKSA1

Name: IPW65R099CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R099CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R099CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R099CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 24A TO247-3-41

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Product details

Overview

IPW65R099CFD7AXKSA1 from Infineon is a 650 V, 99 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package with integrated fast body diode, ultra-low Q_rr (0.78 µC), and 1300 A/µs diode commutation speed. It is designed for high-efficiency PFC and resonant DC-DC stages in on-board chargers and bidirectional converters operating up to 475 V battery systems.

For engineers reviewing the IPW65R099CFD7AXKSA1 datasheet, IPW65R099CFD7AXKSA1 pinout, IPW65R099CFD7AXKSA1 application, or IPW65R099CFD7AXKSA1 equivalent, key selection criteria include R_DS(on) × Q_g FOM (5.25 nC·Ω), E_oss at 400 V (6.8 µJ), avalanche ruggedness (125 mJ), diF/dt capability, and AEC-Q101 qualification for automotive power electronics.

Technical Context

This CoolMOS™ CFD7A device employs charge compensation technology with optimized cell pitch and tailored drift zone doping to achieve simultaneous low conduction loss (R_DS(on) = 99 mΩ max) and low switching energy (E_oss = 6.8 µJ @ 400 V). Its integrated fast body diode features t_rr = 147 ns and Q_rr = 0.78 µC under 100 A/µs diF/dt conditions.

The MOSFET supports ZVS phase-shift full-bridge and LLC topologies via robust dv/dt immunity (120 V/ns) and high diode commutation speed (1300 A/µs). It is rated for T_j = −40 °C to 150 °C, 100% single-pulse avalanche tested, and qualified per AEC-Q101 for automotive-grade reliability.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Withstands DC-link voltages up to 475 V in automotive battery systems with margin for transients.
R_DS(on), max	99 mΩ @ T_j = 25 °C - Enables low conduction loss in high-current PFC and DC-DC primary switches.
Q_g, typ	53 nC @ V_GS = 0–10 V - Supports efficient gate drive design with moderate drive strength requirements.
E_oss @ 400 V	6.8 µJ - Reduces turn-off loss and enables higher-frequency operation in resonant converters.
diF/dt (body diode)	1300 A/µs - Allows reliable zero-voltage switching in hard-commutated LLC and phase-shifted full-bridge circuits.
t_rr	147 ns @ I_F = 12.5 A, diF/dt = 100 A/µs - Minimizes reverse recovery loss and EMI in high-frequency PFC stages.
Avalanche Energy E_AS	125 mJ @ I_D = 5.0 A - Ensures robustness against inductive switching faults without external snubbers.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Internal body diode anode connects to Source, cathode to Drain.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal for MOSFET channel; requires 10 V nominal drive for full enhancement; RG = 5.9 Ω typical.
Pin 2 (Tab)	Drain	Main high-side current path and thermal interface; electrically connected to internal drain metallization and body diode cathode.
Pin 3	Source	Reference node for gate drive and current return path; tied to body diode anode; must be low-inductance layout for diode commutation.

Key Features

Feature	Design Value
Integrated fast body diode	Q_rr = 0.78 µC and diF/dt = 1300 A/µs enable reliable soft-switching in LLC and PSFB without external diodes.
Ultra-low R_DS(on) × Q_g FOM	5.25 nC·Ω - Balances conduction and switching losses for optimal efficiency across light-to-full load in 65–100 kHz PFC.
AEC-Q101 qualification	Validated for automotive powertrain and charging applications including OBCs with extended temperature and lifetime requirements.
100% single-pulse avalanche tested	Guarantees ruggedness under unclamped inductive switching events common in DC-DC converter primary side fault conditions.
Low E_oss (6.8 µJ @ 400 V)	Reduces turn-off loss by >30% vs. prior CFD generations, enabling 100+ kHz operation in high-density OBC designs.

Applications

On-Board Charger (OBC) – PFC Stage

Bi-Directional DC-DC Converter – Primary Side

Use Scenario: Boost PFC front-end in 11 kW or 22 kW EV on-board chargers handling AC input and 400–475 V DC-link.

IC Role / Device Role / Timing Role: High-voltage switching element in continuous conduction mode (CCM) boost topology; operates at 65–100 kHz.

Use Value: Low Q_rr and fast diF/dt minimize reverse recovery loss and improve light-load efficiency by >2.1% versus legacy SJ MOSFETs.

Use Scenario: Primary-side switch in dual-active-bridge (DAB) or phase-shifted full-bridge (PSFB) for 400 V ↔ 800 V bi-directional conversion.

IC Role / Device Role / Timing Role: ZVS-capable high-side switch enabling soft turn-on; leverages integrated diode for freewheeling during dead time.

Use Value: 1300 A/µs diF/dt ensures reliable zero-voltage switching across wide load range, reducing EMI and improving thermal margin.

Unidirectional DC-DC Converter – Isolated LLC Resonant

Automotive Auxiliary Power Supply – 48 V System

Use Scenario: Half-bridge primary switch in high-efficiency LLC resonant converter powering 12 V or 48 V auxiliary rails from 400 V battery.

IC Role / Device Role / Timing Role: Resonant switching device operating at 200–500 kHz; relies on low E_oss and precise Q_gd/Q_gs ratio for ZVS envelope control.

Use Value: E_oss = 6.8 µJ reduces capacitive turn-off loss, enabling stable ZVS down to 10% load while maintaining <0.5% efficiency drop.

Use Scenario: High-side switch in 48 V buck-boost or bidirectional converter for mild-hybrid vehicle energy management.

IC Role / Device Role / Timing Role: Main power switch in 48 V system interfacing with 12 V rail or battery; subjected to frequent load dump and cold-crank transients.

Use Value: 125 mJ avalanche energy rating and 150 °C T_j max ensure survivability during 120 V load-dump events without derating or external clamping.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage automotive MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R041CFD7XKSA1	R_DS(on) = 41 mΩ (lower), Q_g = 102 nC (higher), same package and AEC-Q101 rating	Better conduction loss but higher gate drive demand; suited for lower-frequency, high-current PFC where switching loss is secondary	Select when thermal budget allows larger heatsink and gate driver can support >100 nC charge; avoid if operating >80 kHz due to increased E_oss.
IPP65R099CFD7XKSA1	Same R_DS(on) and Q_g, but in PG-TO220FP-3 package (non-isolated tab, lower power dissipation)	Limited to ≤65 W P_tot; not suitable for 11–22 kW OBCs requiring >100 W dissipation capability	Use only in lower-power auxiliary supplies (<3 kW) or space-constrained industrial SMPS where isolation is not required.

Compared with IPW65R041CFD7XKSA1, this part trades conduction loss for reduced switching loss and gate drive burden; compared with IPP65R099CFD7XKSA1, it delivers 27 W higher thermal headroom and reinforced isolation for high-reliability automotive mounting.

Availability

IPW65R099CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bi-directional DC-DC converters, and automotive 48 V power systems requiring stable component supply, AEC-Q101 compliance, and high-temperature operational integrity.

Supply support for IPW65R099CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This device belongs to the CoolMOS™ CFD7A product line-designed specifically for automotive-grade high-voltage power conversion, emphasizing fast body diode performance, avalanche ruggedness, and ZVS-enabling dynamic parameters in PFC and resonant topologies.

FAQ

Is IPW65R099CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states that "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined SOA in the linear region make it unsuitable for analog amplification or constant-current regulation applications.

What is the maximum recommended gate resistor value for ZVS operation in an LLC half-bridge?

For reliable ZVS in LLC half-bridge configurations, the gate resistor should not exceed 5.3 Ω (as used in the datasheet's switching time test conditions). Higher values increase turn-on delay and reduce diF/dt margin, risking hard switching. Layout parasitics must also be minimized-stray inductance >10 nH degrades ZVS performance regardless of R_G.

Does the PG-TO247-3 package provide electrical isolation between tab and leads?

Yes. The PG-TO247-3 package used for IPW65R099CFD7AXKSA1 features an electrically isolated tab (Drain), rated for ≥2500 V_AC isolation per IEC 60747-16. This enables direct heatsink mounting without insulating pads in high-voltage automotive systems, simplifying thermal design and improving reliability.

How does the 1300 A/µs diF/dt rating impact PCB layout requirements?

This rating demands minimal source loop inductance: total loop inductance (including bond wires, lead frames, and PCB traces) must stay below 10 nH. Layout best practices include symmetric double-sided copper pours for Source, Kelvin Source connection for gate driver reference, and avoidance of vias in high-di/dt paths. Failure to meet this increases voltage overshoot and risks diode failure during commutation.

IPW65R099CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 99mOhm @ 12.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 630µA

Gate Charge (Qg) (Max) @ Vgs:: 53 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2513 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 127W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R099CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R099CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R099CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R099CFD7AXKSA1 reliable?

The price and inventory of IPW65R099CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R099CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R099CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R099CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R099CFD7AXKSA1?

IPW65R099CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R099CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R099CFD7AXKSA1?

For technical support, including IPW65R099CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R099CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R099CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R099CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R099CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R099CFD7AXKSA1?

All IPW65R099CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R099CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R099CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R099CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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