Infineon Technologies IPW65R110CFD7XKSA1

Overview

IPW65R110CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in the CoolMOS™ CFD7 family, designed for high-efficiency resonant topologies. It delivers R_DS(on) = 110 mΩ (max), Q_g = 41 nC (typ), E_oss = 5.8 µJ at 400 V, and supports 82 A pulsed drain current. Its ultra-fast body diode (di_F/dt = 1300 A/µs) enables robust hard commutation in phase-shift full-bridge and LLC converters for server PSUs and EV charging.

For engineers reviewing the IPW65R110CFD7XKSA1 datasheet, IPW65R110CFD7XKSA1 pinout, IPW65R110CFD7XKSA1 application, or IPW65R110CFD7XKSA1 equivalent, key selection criteria include its 650 V breakdown rating, low temperature coefficient of R_DS(on), integrated ESD protection, and validated JEDEC industrial qualification-critical for ZVS designs requiring reliability under bus voltage stress.

Technical Context

This device implements Infineon's 7th-generation CoolMOS™ superjunction architecture with charge compensation cells optimized for soft-switching operation. Its low Co(er) (73 pF) and fast trr (110–165 ns) reduce switching losses in resonant converters, while the 1.1 °C/W R_thJC ensures thermal stability at high power density.

The MOSFET integrates an ultra-fast body diode with controlled reverse recovery (Q_rr = 0.56–1.12 µC) and high dv/dt ruggedness (120 V/ns), enabling reliable operation in asymmetric half-bridge and high-frequency LLC stages without external snubbers or gate ferrites in many cases.

Key Specifications

Pinout & Package

Package: PG-TO247-3 (standard through-hole TO-247 variant with isolated tab). Tab is electrically connected to Drain (Pin 2).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Compared with IPW65R099CFD7 and IPP65R110CFD7, IPW65R110CFD7XKSA1 offers optimal balance of conduction loss, switching loss, and thermal performance in medium-to-high-power ZVS topologies-especially where board-level isolation and 114 W dissipation capability are mandatory.

Availability

IPW65R110CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, JEDEC-qualified industrial reliability, and proven ZVS performance in production-grade 650 V systems.

Supply support for IPW65R110CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon and SiC power devices for industrial and automotive markets.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant converters-including LLC, phase-shift full-bridge, and dual-active-bridge topologies-where fast body diode behavior and low E_oss are critical.

FAQ

What is the maximum continuous drain current rating for IPW65R110CFD7XKSA1?

The maximum continuous drain current is 22 A at T_C = 25°C and derates to 14 A at T_C = 100°C, limited by junction temperature (T_j ≤ 150°C). This rating assumes proper heatsinking with R_thJC = 1.1 °C/W and no additional thermal interface resistance.

Does IPW65R110CFD7XKSA1 require external gate resistors for stable operation?

Yes-Infineon recommends a gate resistor of 1.8 Ω (as used in datasheet switching tests) to control dv/dt and suppress oscillation. For paralleling, ferrite beads on individual gate lines or separate totem-pole drivers are advised to prevent dynamic current imbalance.

How does the body diode performance compare to previous CoolMOS™ generations?

This CFD7 device achieves di_F/dt = 1300 A/µs and trr = 110–165 ns-~2× faster than CFD2-due to refined charge compensation and optimized epitaxial layer design. Reverse recovery charge (Q_rr) is reduced by 30%, lowering voltage overshoot and EMI in hard-commutated phases.

Is IPW65R110CFD7XKSA1 suitable for use in solar inverters with 1000 V DC link?

Yes-it is rated for 650 V V_DS with 700 V surge capability and qualified for industrial operation up to 150°C. In 1000 V string inverters, it is typically deployed in three-level NPC or T-type topologies where each switch sees ≤500 V, staying within safe operating area with margin.