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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R110CFDAFKSA1

Name: IPW65R110CFDAFKSA1
Brand: Infineon Technologies
SKU: IPW65R110CFDAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R110CFDAFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R110CFDAFKSA1.pdf

Description:: MOSFET N-CH 650V 31.2A TO247-3

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Product details

Overview

IPW65R110CFDAFKSA1 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C), TO-247 packaged CoolMOS™ CFDA superjunction power MOSFET with R_DS(on) = 0.11 Ω (max), Q_g = 118 nC (typ), and E_oss = 9.2 µJ @ 400 V - engineered for high-efficiency resonant switching in automotive on-board chargers and industrial SMPS.

For engineers reviewing the IPW65R110CFDAFKSA1 datasheet, IPW65R110CFDAFKSA1 pinout, IPW65R110CFDAFKSA1 application, or IPW65R110CFDAFKSA1 equivalent, key selection criteria include ultra-fast body diode recovery (t_rr = 150 ns, Q_rr = 0.8 µC), high commutation ruggedness (di/dt = 900 A/µs), AEC-Q101 qualification, and low FOM (R_DS(on) × Q_g) for reduced switching losses.

Technical Context

This device implements Infineon's CoolMOS™ CFDA superjunction architecture optimized for hard- and soft-switching topologies. It delivers robust unclamped inductive switching (UIS) capability (E_AS = 845 mJ), high dv/dt immunity (50 V/ns), and stable gate threshold (V_GS(th) = 3.5–4.5 V) across temperature.

The integrated body diode features tightly controlled reverse recovery (I_RRM = 8.3 A, t_rr = 150 ns) and low Q_rr, enabling reliable zero-voltage switching (ZVS) in LLC and phase-shifted full-bridge converters without external snubbers.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports 400 V DC-link operation with ≥1.6× safety margin for automotive OBC and industrial PFC stages.
R_DS(on)	0.11 Ω (max) at V_GS = 10 V, T_j = 25°C - enables low conduction loss in continuous 30 A output designs.
Q_g	118 nC (typ) - reduces gate drive power and simplifies driver selection for 100–300 kHz operation.
E_oss	9.2 µJ @ 400 V - minimizes turn-on energy loss in resonant converters, improving efficiency above 200 kHz.
t_rr	150 ns - ensures clean commutation in half-bridge configurations without shoot-through risk.
di/dt	900 A/µs - sustains fast current transitions during ZVS transitions without oscillation or failure.
T_j(max)	150 °C - supports operation in sealed enclosures with limited airflow, such as EV charging modules.

Pinout & Package

IPW65R110CFDAFKSA1 is housed in a TO-247 package with isolated mounting flange, rated for 277.8 W power dissipation at T_C = 25°C and thermal resistance R_thJC = 0.45 K/W.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Low-impedance gate terminal (R_G = 1.3 Ω); requires <13 V drive for full enhancement and <20 V absolute max rating.
Pin 2 (Drain)	High-side power output	Connected to DC-link or transformer primary; electrically tied to heatsink via isolated flange in TO-247.
Pin 3 (Source)	Power return / reference	Serves as local ground reference for gate drive; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 150 ns, Q_rr = 0.8 µC - eliminates need for external anti-parallel SiC Schottky in medium-frequency LLC converters.
AEC-Q101 qualified	Validated for automotive underhood environments (−40 to +150 °C, humidity, vibration) - suitable for OBC, DC-DC, and traction inverters.
Low R_DS(on) × Q_g FOM	13.0 Ω·nC - balances conduction and switching loss for optimal 200–500 kHz operation in compact power supplies.
High dv/dt ruggedness	50 V/ns - prevents false turn-on in high-noise bridge-leg layouts without additional gate clamping.

Applications

On-Board Charger (OBC)

Industrial Server PSU

Use Scenario: Bidirectional AC/DC and DC/DC conversion in 11 kW EV on-board chargers with GaN-assisted hybrid topologies.

IC Role / Device Role / Timing Role: Primary-side high-voltage switch in resonant LLC half-bridge stage operating at 250–350 kHz.

Use Value: Enables >96% peak efficiency by minimizing E_oss and Q_rr-related losses while maintaining ZVS over full load range.

Use Scenario: High-density 3 kW server power supply with active clamp forward or asymmetrical half-bridge topology.

IC Role / Device Role / Timing Role: Main switching transistor in primary-side power stage handling 380–400 V DC input.

Use Value: Delivers stable R_DS(on) up to 150 °C junction temperature, supporting fanless operation in 1U chassis.

Telecom Rectifier

Renewable Energy Inverter

Use Scenario: 48 V telecom rectifier module with universal AC input and 3 kW output.

IC Role / Device Role / Timing Role: Switch in interleaved PFC boost stage operating at 65–100 kHz.

Use Value: Reduces total harmonic distortion (THD) and improves power factor via fast, low-loss switching with minimal gate drive overhead.

Use Scenario: String-level DC-AC inverter for residential solar systems with 600–1000 V PV input.

IC Role / Device Role / Timing Role: High-side switch in three-level NPC (neutral-point-clamped) inverter leg.

Use Value: Supports 150 °C continuous operation and withstands repetitive avalanche stress during grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R099CFD	R_DS(on) = 0.099 Ω (max), Q_g = 132 nC - lower conduction loss but higher switching charge.	Better suited for <200 kHz fixed-frequency PFC where conduction dominates; less optimal for >250 kHz ZVS.	Select when thermal budget is constrained at low switching frequency and gate drive capability is sufficient.
IPP65R110CFDA	TO-220 package, R_thJA = 62 K/W - higher thermal resistance than TO-247; same electrical specs.	Limited to lower-power (<1.5 kW) applications due to derated current (19.7 A @ T_C = 100°C).	Choose only for cost-sensitive, space-constrained designs where PCB-mounting and lower power density are acceptable.

Compared with IPW65R099CFD and IPP65R110CFDA, IPW65R110CFDAFKSA1 offers the optimal balance of low R_DS(on), moderate Q_g, and superior thermal performance in TO-247 - making it the preferred choice for 2–11 kW resonant converters requiring AEC-Q101 compliance and field-proven ruggedness.

Availability

IPW65R110CFDAFKSA1 is available at Aetrix Electronics and suitable for automotive on-board chargers, industrial server PSUs, telecom rectifiers, and renewable energy inverters requiring stable component supply and long-term lifecycle support.

Supply support for IPW65R110CFDAFKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and R&D infrastructure.

The CoolMOS™ CFDA series was developed specifically for high-reliability, high-efficiency resonant and hard-switching power conversion in automotive and industrial applications - emphasizing body-diode robustness, low E_oss, and AEC-Q101 qualification.

FAQ

What is the maximum continuous drain current for IPW65R110CFDAFKSA1 at 100°C case temperature?

The maximum continuous drain current is 19.7 A at T_C = 100°C, as specified in Table 2 of the datasheet. This rating accounts for thermal derating due to junction-to-case thermal resistance (0.45 K/W) and safe operating area limits - not ambient temperature. Designers must ensure heatsink design maintains T_C ≤ 100°C under full-load conditions.

Is IPW65R110CFDAFKSA1 suitable for use in non-isolated DC-DC converters?

Yes - its 650 V V_DS rating and robust body diode make it viable in non-isolated buck-derived topologies like active clamp forward or synchronous buck with high input voltage (e.g., 400 V bus). However, layout must minimize parasitic inductance to avoid voltage overshoot during turn-off, especially given its 50 V/ns dv/dt rating.

Does IPW65R110CFDAFKSA1 require a negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 3.5–4.5 V and is fully enhanced at V_GS = 10 V. While −5 V to 0 V gate bias improves noise immunity, it is not required for functional operation. The absolute maximum gate-source voltage is ±30 V (AC) and ±20 V (static), per Table 2.

How does the body diode performance compare to standard silicon MOSFETs in hard-commutation?

Its body diode achieves t_rr = 150 ns and Q_rr = 0.8 µC - significantly faster and lower charge than conventional 650 V MOSFETs (typically >300 ns, >3 µC). This enables reliable hard-commutation at di/dt up to 900 A/µs without oscillation or secondary breakdown, verified per AEC-Q101 stress testing.

IPW65R110CFDAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 31.2A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 110mOhm @ 12.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 1.3mA

Gate Charge (Qg) (Max) @ Vgs:: 118 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 3240 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 277.8W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R110CFDAFKSA1 FAQ

1.How can I place an order for IPW65R110CFDAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R110CFDAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R110CFDAFKSA1 reliable?

The price and inventory of IPW65R110CFDAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R110CFDAFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R110CFDAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R110CFDAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R110CFDAFKSA1?

IPW65R110CFDAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R110CFDAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R110CFDAFKSA1?

For technical support, including IPW65R110CFDAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R110CFDAFKSA1 requirements.

6.How does Aetrix verify that IPW65R110CFDAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R110CFDAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R110CFDAFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R110CFDAFKSA1?

All IPW65R110CFDAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R110CFDAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R110CFDAFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R110CFDAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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