Infineon Technologies IPW65R110CFDFKSA2

Overview

IPW65R110CFDFKSA2 from Infineon Technologies is a 650 V, 31.2 A (T_C = 25°C) superjunction N-channel power MOSFET in the CoolMOS™ CFD2 family, featuring R_DS(on) = 0.11 Ω (max), Q_g = 118 nC (typ), and E_oss = 9.2 µJ at 400 V. It delivers ultra-fast body diode recovery (t_rr = 150 ns, Q_rr = 0.8 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling reliable operation in resonant LLC and ZVS-PWM topologies for server PSUs and telecom rectifiers.

For engineers reviewing the IPW65R110CFDFKSA2 datasheet, IPW65R110CFDFKSA2 pinout, IPW65R110CFDFKSA2 application, or IPW65R110CFDFKSA2 equivalent, key selection criteria include its low R_DS(on)×Q_g figure-of-merit, robust body diode for hard-switched PFC stages, TO-247 package thermal performance (R_thJC = 0.45 °C/W), and industrial-grade JEDEC qualification.

Technical Context

This device implements Infineon's second-generation CoolMOS™ superjunction architecture with charge compensation cells optimized for 650 V operation. Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support standard 10–15 V gate drivers without level-shifting. The integrated body diode exhibits controlled reverse recovery with low Q_rr and minimal tail current, reducing switching losses in bridge-leg configurations.

The TO-247 package enables high-power dissipation (P_tot = 277.8 W at T_C = 25°C) and low junction-to-case thermal resistance (0.45 °C/W), critical for thermally constrained server and telecom power modules. Dynamic parameters-including C_iss = 3240 pF, C_oss,eff = 118 pF (energy-related), and t_fall = 6 ns-support high-frequency operation up to 300 kHz in soft-switching applications.

Key Specifications

Pinout & Package

IPW65R110CFDFKSA2 uses the industry-standard TO-247 package (PG-TO247), with 3 leads: drain (pin 2), gate (pin 1), and source (pin 3). The package provides low thermal resistance (R_thJC = 0.45 °C/W) and mechanical robustness for high-reliability power conversion designs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Compared with IPW65R099CFD and STW65N60DM2, IPW65R110CFDFKSA2 offers the optimal balance of low R_DS(on), moderate Q_g, and best-in-class diode performance-making it preferred for high-frequency resonant topologies where both switching and commutation losses must be minimized.

Availability

IPW65R110CFDFKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, LCD TV backlight inverters, and solar microinverters requiring stable component supply, long-term lifecycle support, and traceable industrial-grade sourcing.

Supply support for IPW65R110CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving automotive, industrial, and power markets.

The CoolMOS™ CFD2 product line was engineered specifically for high-efficiency, high-reliability resonant and soft-switching power conversion-targeting 80 PLUS Titanium PSUs, telecom rectifiers, and renewable energy systems demanding >98% peak efficiency and >10-year field life.

FAQ

What is the maximum continuous drain current rating for IPW65R110CFDFKSA2 at 100°C case temperature?

The maximum continuous drain current (I_D) is 19.7 A at T_C = 100°C, derated from 31.2 A at T_C = 25°C due to thermal limitations. This value is defined by junction temperature limits and package thermal resistance (R_thJC = 0.45 °C/W), not by silicon current density alone.

Does IPW65R110CFDFKSA2 require a negative gate voltage for safe turn-off in high-dv/dt environments?

No. The device has a gate-source voltage rating of ±20 V (static) and ±30 V (AC), and its gate oxide is robust enough to tolerate typical 0–12 V gate drive without negative bias. Negative turn-off is unnecessary due to its low gate threshold variation (3.5–4.5 V) and high dv/dt immunity (50 V/ns).

How does the body diode performance compare between IPW65R110CFDFKSA2 and standard superjunction MOSFETs?

Its body diode achieves t_rr = 150 ns and Q_rr = 0.8 µC at 19.1 A, which is ~45% faster and ~60% lower charge than typical CFD1 or standard SJ devices. This results from optimized carrier lifetime control and tailored doping profiles in the CoolMOS™ CFD2 process, enabling reliable hard-commutation without external diodes.

Can IPW65R110CFDFKSA2 be used in parallel configurations for higher current applications?

Yes-its positive temperature coefficient of R_DS(on) above 25°C ensures inherent current sharing stability. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared heatsink. Derating to 80% of total rated current is recommended for reliability in multi-device arrays.