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Infineon Technologies IPW65R115CFD7AXKSA1

Name: IPW65R115CFD7AXKSA1
Brand: Infineon Technologies
SKU: IPW65R115CFD7AXKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R115CFD7AXKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R115CFD7AXKSA1.pdf

Description:: MOSFET N-CH 650V 21A TO247-3-41

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Product details

Overview

IPW65R115CFD7AXKSA1 from Infineon is a 650 V, 115 mΩ automotive-qualified Superjunction MOSFET in PG-TO247-3 package, featuring integrated fast body diode (diF/dt = 1300 A/µs), ultra-low Qrr (0.56 µC), and RDS(on)×Qg FOM optimized for high-efficiency PFC and resonant DC-DC stages in on-board chargers.

For engineers reviewing the IPW65R115CFD7AXKSA1 datasheet, IPW65R115CFD7AXKSA1 pinout, IPW65R115CFD7AXKSA1 application, or IPW65R115CFD7AXKSA1 equivalent, key selection criteria include avalanche ruggedness (97 mJ), Eoss (5.6 µJ @ 400 V), dv/dt immunity (120 V/ns), and AEC-Q101 qualification for automotive traction battery systems up to 475 V.

Technical Context

This CoolMOS™ CFD7A device implements charge-compensated superjunction architecture with field-stop layer and integrated fast-recovery body diode-enabling zero-voltage switching (ZVS) in phase-shift full-bridge and LLC topologies. Its gate plateau voltage is 5.6 V, and it exhibits low Co(er) (70 pF) for reduced turn-off energy.

Designed for unidirectional/bidirectional DC-DC converters and on-board chargers, it supports high-frequency operation (>100 kHz) due to low Qg (41 nC) and fast switching (tr = 9 ns, tf = 5 ns at RG = 1.8 Ω), while maintaining robustness against cosmic radiation effects above 475 V blocking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage compatible with 400–475 V battery systems and 400 V bus PFC stages.
R_DS(on), max	115 mΩ @ T_j = 25°C - Enables low conduction loss in high-current DC-DC primary switches.
Q_g, typ	41 nC - Supports efficient gate driving at >100 kHz with moderate gate driver power requirement.
E_oss @ 400 V	5.6 µJ - Reduces turn-off energy loss in hard-switched and resonant topologies.
diF/dt	1300 A/µs - Enables fast, controlled body diode commutation in ZVS circuits without oscillation.
Q_rr	0.56 µC - Ultra-low reverse recovery charge minimizes switching loss and EMI in bridge-leg transitions.
T_j max	150 °C - Rated for continuous operation in under-hood automotive environments with thermal derating.

Pinout & Package

Package: PG-TO247-3 (through-hole, isolated tab). Tab is Drain (Pin 2); Gate is Pin 1; Source is Pin 3. Internal body diode anode connects to Source; cathode to Drain. Integrated ESD protection diode between Gate and Source.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1	Gate	Control terminal; requires ≤20 V static / ≤30 V pulse drive; 6.0 Ω internal gate resistance.
Pin 2 (Tab)	Drain	Main high-side current path; electrically connected to metal tab for thermal conduction and high-current routing.
Pin 3	Source	Reference node for gate drive and current sensing; tied to internal body diode anode.

Key Features

Feature	Design Value
Integrated fast body diode	diF/dt = 1300 A/µs and trr = 110 ns enable reliable ZVS in LLC and phase-shift full-bridge without external SiC diodes.
AEC-Q101 qualified	Validated for automotive powertrain applications including on-board chargers and bidirectional DC-DC converters.
Ultra-low R_DS(on) × Q_g FOM	Optimizes trade-off between conduction loss and switching loss across 65–100 kHz operating range.
100% avalanche tested	Single-pulse EAS = 97 mJ ensures robustness against inductive switching transients in real-world layouts.
Low E_oss and Q_rr	5.6 µJ E_oss and 0.56 µC Q_rr reduce turn-off loss and improve light-load efficiency in PFC boost stages.

Applications

On-Board Charger (OBC) Primary Switch

PFC Boost Stage

Use Scenario: High-voltage DC-DC conversion in 400 V/800 V EV architectures with bidirectional power flow capability.

IC Role / Device Role / Timing Role: Primary-side high-side switch in dual-active-bridge (DAB) topology operating at 100–200 kHz.

Use Value: Low Q_rr and fast diF/dt prevent shoot-through during synchronous rectification and enable soft-switching over full load range.

Use Scenario: Continuous conduction mode (CCM) boost converter in single-phase or three-phase PFC front-end for EV charging stations.

IC Role / Device Role / Timing Role: Main switching element handling 10–20 A RMS input current at 65–100 kHz.

Use Value: 115 mΩ R_DS(on) and 5.6 µJ E_oss minimize total losses while maintaining >98.5% efficiency at full load.

ZVS Phase-Shift Full-Bridge

Resonant LLC Converter

Use Scenario: Isolated DC-DC stage in vehicle-to-grid (V2G) bidirectional OBCs requiring high reliability and thermal margin.

IC Role / Device Role / Timing Role: Leading-leg switch subjected to hard turn-on and soft turn-off; must sustain high dv/dt (120 V/ns).

Use Value: Avalanche-rated construction and 1300 A/µs diF/dt ensure stable commutation during ZVS transitions without voltage overshoot.

Use Scenario: Primary-side switch in high-efficiency LLC resonant converter for 3.3 kW–22 kW on-board chargers.

IC Role / Device Role / Timing Role: Resonant tank switch operating near zero voltage crossing with variable frequency control.

Use Value: Low Co(er) (70 pF) and ultra-low Q_rr reduce capacitive turn-on loss and improve light-load efficiency by >2% vs prior CFD generations.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage Superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7A	R_DS(on) = 95 mΩ, Q_g = 47 nC, E_oss = 6.2 µJ - lower R_DS(on) but higher switching charge.	Better conduction loss at <100 kHz; less suitable for >150 kHz due to higher Q_g-driven gate loss.	Select when thermal budget favors lower R_DS(on) and switching frequency remains ≤120 kHz.
IPP65R115CFD7	Same R_DS(on) and Q_g, but TO-220FP package - lower thermal resistance (R_thJC = 1.4 K/W vs 1.1 K/W) and no isolated tab.	Limited to lower-power (<1.5 kW) PFC or non-automotive industrial converters due to lack of AEC-Q101 qualification.	Choose for cost-sensitive industrial PFC where automotive qualification and thermal performance are not required.

Compared with IPW65R095CFD7A and IPP65R115CFD7, IPW65R115CFD7AXKSA1 delivers optimal balance of conduction loss, switching loss, and automotive-grade reliability-making it the preferred choice for production-grade 400–475 V battery system DC-DC and PFC designs requiring PPAP compliance.

Availability

IPW65R115CFD7AXKSA1 is available at Aetrix Electronics and suitable for on-board chargers, bidirectional DC-DC converters, and automotive PFC stages requiring stable component supply, AEC-Q101 traceability, and long-term lifecycle support.

Supply support for IPW65R115CFD7AXKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

This part belongs to the CoolMOS™ CFD7A product line-designed specifically for high-efficiency, high-reliability automotive power conversion in 400 V–800 V battery systems, with emphasis on ZVS compatibility and cosmic radiation resilience.

FAQ

Is IPW65R115CFD7AXKSA1 suitable for linear-mode operation?

No. Infineon explicitly advises against linear-mode operation for this device. The datasheet states "We do not recommend using the CoolMOS mentioned in this datasheet to operate in 'linear mode'." Thermal runaway risk and undefined SOA in linear region make it unsuitable for analog amplification or constant-current regulation applications.

What is the maximum recommended gate resistor value for ZVS operation?

For ZVS in phase-shift full-bridge, Infineon recommends RG ≤ 10 Ω to ensure sufficient gate drive strength during critical dead-time transitions. At RG = 1.8 Ω (test condition), td(off) = 71 ns and tf = 5 ns-values used to validate ZVS timing margins. Higher RG increases turn-off delay and risks hard switching.

Does the integrated body diode eliminate need for external anti-parallel diodes?

Yes-in ZVS and resonant topologies where diode conduction is brief and controlled, the integrated fast body diode (trr = 110 ns, Qrr = 0.56 µC) replaces discrete anti-parallel diodes. However, in hard-commutated or high-diF/dt applications beyond 1300 A/µs, external SiC diodes may still be required for reliability.

How does cosmic radiation affect operation above 475 V blocking?

At blocking voltages >475 V, single-event burnout (SEB) risk increases due to cosmic ray-induced ionization. Infineon requires customers to evaluate cosmic radiation impact in early design phase and engage Infineon sales for mitigation guidance-including layout hardening, derating, and test protocols-prior to PPAP release.

IPW65R115CFD7AXKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7A

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 21A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 115mOhm @ 9.7A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 490µA

Gate Charge (Qg) (Max) @ Vgs:: 41 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1950 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 114W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R115CFD7AXKSA1 FAQ

1.How can I place an order for IPW65R115CFD7AXKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R115CFD7AXKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R115CFD7AXKSA1 reliable?

The price and inventory of IPW65R115CFD7AXKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R115CFD7AXKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R115CFD7AXKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R115CFD7AXKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R115CFD7AXKSA1?

IPW65R115CFD7AXKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R115CFD7AXKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R115CFD7AXKSA1?

For technical support, including IPW65R115CFD7AXKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R115CFD7AXKSA1 requirements.

6.How does Aetrix verify that IPW65R115CFD7AXKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R115CFD7AXKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R115CFD7AXKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R115CFD7AXKSA1?

All IPW65R115CFD7AXKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R115CFD7AXKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R115CFD7AXKSA1 part is unused and in its original packaging.

Return procedure for IPW65R115CFD7AXKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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