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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R125CFD7XKSA1

Name: IPW65R125CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW65R125CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R125CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R125CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

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Product details

Overview

IPW65R125CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO247-3 package, featuring 125 mΩ max R_DS(on), 36 nC typical gate charge, and ultra-fast body diode with 1300 A/µs di_F/dt capability. It is engineered for zero-voltage switching (ZVS) topologies including LLC resonant converters and phase-shift full-bridge circuits in server power supplies, telecom rectifiers, EV charging stations, and solar inverters.

For engineers reviewing the IPW65R125CFD7XKSA1 datasheet, IPW65R125CFD7XKSA1 pinout, IPW65R125CFD7XKSA1 application, or IPW65R125CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss of 5.1 µJ at 400 V, thermal resistance R_thJC of 1.27 °C/W, and validated JEDEC industrial qualification up to 150 °C junction temperature.

Technical Context

This CoolMOS™ CFD7 device employs charge-compensation superjunction architecture with integrated fast-recovery body diode and on-chip ESD protection. Its optimized cell design delivers reduced Q_gd/Q_g ratio and low Co(er) of 64 pF, enabling clean turn-off and minimized voltage overshoot during ZVS transitions.

The MOSFET supports high di/dt commutation (1300 A/µs) and exhibits low R_DS(on) temperature coefficient-only 1.2× increase from 25 °C to 150 °C-ensuring stable conduction loss across industrial operating ranges without derating penalties.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - rated for 400 V bus systems with 25% safety margin; withstands 700 V transient per JEDEC stress test
R_DS(on) max	125 mΩ @ T_j = 25 °C - enables <1.5 W conduction loss at 8.5 A DC, critical for high-power-density SMPS
Q_g typ	36 nC - reduces gate drive power and allows use of smaller, lower-cost gate drivers in 100–300 kHz designs
E_oss @ 400 V	5.1 µJ - directly lowers switching loss in resonant topologies; 30% lower than prior CFD2 generation
di_F/dt max	1300 A/µs - ensures reliable hard-switching recovery in asymmetric half-bridge and synchronous rectifier configurations
R_thJC	1.27 °C/W - supports >90 W continuous dissipation at T_C = 100 °C, enabling compact heatsink integration
V_GS(th)	3.5–4.5 V - provides noise-immune turn-on threshold compatible with standard 5 V and 12 V gate drivers

Pinout & Package

Package: PG-TO247-3 - thermally enhanced through-hole package with isolated tab (Drain), metalized backside for direct heatsink mounting, and 3.5 mm creepage/clearance compliant with IEC 60950-1.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Low-impedance input requiring <10.2 Ω series gate resistor for optimal dv/dt control and ringing suppression
Pin 2 (Drain / Tab)	High-side power output	Electrically connected to metal tab; must be isolated from heatsink unless system-level grounding permits common-Drain configuration
Pin 3 (Source)	Reference node	Serves as return path for gate drive and load current; requires low-inductance PCB layout to minimize shoot-through risk

Key Features

Feature	Design Value
Ultra-fast body diode	trr = 104–156 ns and Q_rr = 0.52–1.04 µC enable soft reverse recovery in LLC primary-side synchronous rectification
Reduced switching losses	Co(er) = 64 pF and Q_gd = 11 nC minimize Miller plateau duration and energy dissipation during turn-off
Hard commutation ruggedness	Validated 1300 A/µs di_F/dt and 85 mJ single-pulse avalanche energy ensure reliability in unclamped inductive switching
Low R_DS(on) tempco	R_DS(on) increases only 1.2× from 25 °C to 150 °C - maintains efficiency stability without active thermal compensation

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: 3 kW front-end PFC + LLC resonant DC/DC stage in 1U rack-mount server PSU.

IC Role / Device Role / Timing Role: Primary-side switch in LLC half-bridge, operating at 200–300 kHz with ZVS across full load range.

Use Value: 5.1 µJ E_oss and 125 mΩ R_DS(on) deliver >96.5% full-load efficiency and reduce heatsink volume by 35% vs. CFD2.

Use Scenario: 48 V/50 A telecom rectifier with active OR-ing and hot-swap capability.

IC Role / Device Role / Timing Role: High-side switch in isolated DC/DC module, handling 400 V input with burst-mode light-load operation.

Use Value: Ultra-low Q_rr (0.52 µC typ) eliminates reverse recovery cross-conduction loss, improving standby efficiency by 0.8%.

EV Charging Station

Solar Inverter

Use Scenario: 11 kW AC/DC OBC (on-board charger) with dual-phase interleaved PFC and CLLC isolation stage.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in CLLC transformer output, commutating at 300 kHz.

Use Value: 1300 A/µs di_F/dt rating prevents diode failure during hard commutation events caused by transformer leakage inductance spikes.

Use Scenario: 10 kW string inverter with two-level NPC topology and 1000 V DC input.

IC Role / Device Role / Timing Role: High-voltage leg switch in three-phase inverter bridge, operating with 16 kHz SVM modulation.

Use Value: 700 V V_DS surge rating and 150 °C T_j max support 1000 V DC bus derating and extended field lifetime under desert ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-efficiency 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD7	Lower R_DS(on) (110 mΩ), higher Q_g (41 nC), identical package and di_F/dt	Better conduction loss at >12 A, but increased gate drive loss above 250 kHz	Select when thermal budget is constrained and switching frequency ≤ 200 kHz
STW65N6F6	Higher R_DS(on) (135 mΩ), no integrated fast diode, 1000 A/µs di_F/dt, TO-247FP package	Limited ZVS capability in LLC due to slower body diode (trr ≈ 220 ns)	Acceptable for hard-switched PSFB where diode speed is non-critical and cost sensitivity dominates

Compared with IPW65R110CFD7, this part trades 12% higher R_DS(on) for 12% lower Q_g, favoring high-frequency ZVS designs; versus STW65N6F6, it delivers superior light-load efficiency and hard-commutation immunity at premium cost.

Availability

IPW65R125CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV charging stations requiring stable component supply, JEDEC-qualified industrial reliability, and thermal performance up to 150 °C junction temperature.

Supply support for IPW65R125CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with global R&D and manufacturing infrastructure serving industrial, automotive, and energy markets.

This device belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, designed specifically to maximize efficiency and power density in resonant and soft-switching SMPS topologies for datacenter, telecom, and renewable energy applications.

FAQ

What is the maximum recommended gate resistor value for ZVS operation in an LLC converter?

A 10.2 Ω gate resistor is specified in the datasheet for switching characterization at 400 V and 8.5 A. For ZVS optimization, values between 5 Ω and 15 Ω are typical; lower values improve turn-on speed but increase ringing risk, while higher values extend dead-time margin but raise switching loss. Layout parasitics must be measured to finalize value.

Does IPW65R125CFD7XKSA1 require external snubbers in phase-shift full-bridge designs?

No external RC snubber is required for normal ZVS operation due to its low E_oss (5.1 µJ) and controlled dv/dt (120 V/ns). However, a small ferrite bead (e.g., 600 Ω @ 100 MHz) on the gate trace is recommended to damp high-frequency oscillation during hard commutation events, per Infineon's paralleling guidelines.

How does the integrated ESD diode affect layout and ESD testing?

The integrated ESD diode (rated ±2 kV HBM) connects Gate-to-Source internally and does not require external TVS protection. Layout must maintain ≥2 mm clearance between Gate and Drain traces to prevent field-induced breakdown; ESD testing follows JEDEC JS-001 Class 2 (2 kV HBM), verified during qualification.

Can this MOSFET be paralleled, and what layout precautions apply?

Yes-Infineon qualifies this device for paralleling. Critical requirements include matched gate trace lengths (<1 mm difference), individual 10 Ω gate resistors per device, and symmetrical source routing to minimize current imbalance. Ferrite beads on each gate line (not shared) are strongly recommended to suppress common-mode oscillation.

IPW65R125CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 125mOhm @ 8.5A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 420µA

Gate Charge (Qg) (Max) @ Vgs:: 36 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1694 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 98W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R125CFD7XKSA1 FAQ

1.How can I place an order for IPW65R125CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R125CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R125CFD7XKSA1 reliable?

The price and inventory of IPW65R125CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R125CFD7XKSA1 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R125CFD7XKSA1 transactions.

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4.How is shipping managed for IPW65R125CFD7XKSA1?

IPW65R125CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R125CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R125CFD7XKSA1?

For technical support, including IPW65R125CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R125CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW65R125CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R125CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R125CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R125CFD7XKSA1?

All IPW65R125CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R125CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R125CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R125CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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