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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R150CFDAFKSA1

Name: IPW65R150CFDAFKSA1
Brand: Infineon Technologies
SKU: IPW65R150CFDAFKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R150CFDAFKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R150CFDAFKSA1.pdf

Description:: MOSFET N-CH 650V 22.4A TO247-3

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Product details

Overview

IPW65R150CFDA from Infineon Technologies is a 650 V, 22.4 A (T_C = 25°C) automotive-qualified N-channel superjunction MOSFET in TO-247 package, featuring R_DS(on) = 0.15 Ω (max), Q_g = 86 nC (typ), and E_oss = 6.8 µJ @ 400 V. It delivers ultra-fast body diode recovery (t_rr = 140 ns, Q_rr = 0.7 µC) and high commutation ruggedness (di/dt = 900 A/µs), enabling robust resonant ZVS/ZCS operation in high-efficiency SMPS for server power supplies.

For engineers reviewing the IPW65R150CFDA datasheet, IPW65R150CFDA pinout, IPW65R150CFDA application, or IPW65R150CFDA equivalent, key selection criteria include its AEC-Q101 qualification, low R_DS(on)×Q_g figure-of-merit (FOM), fast and soft body diode, and thermal resistance R_thJC = 0.64 K/W - critical for thermally constrained 650 V hard-switched and resonant topologies.

Technical Context

This CoolMOS™ CFDA device implements a charge-compensated superjunction structure with optimized cell pitch and epitaxial doping profile to simultaneously minimize conduction loss (R_DS(on)) and switching loss (E_oss, Q_g). Its gate threshold voltage (V_GS(th) = 3.5–4.5 V) and plateau voltage (V_GP = 6.4 V) support standard 10–15 V gate drive while maintaining noise immunity.

The integrated body diode exhibits controlled minority-carrier lifetime and tailored carrier distribution, yielding t_rr = 140 ns and I_RRM = 8.8 A at di/dt = 100 A/µs - enabling reliable bidirectional current handling in LLC and phase-shifted full-bridge converters without external anti-parallel diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - supports DC bus voltages up to 400 V in PFC and resonant converters with ≥50% safety margin against transient overvoltage.
R_DS(on), max	0.15 Ω @ V_GS = 10 V, T_j = 25°C - enables <2.25 W conduction loss at 12 A RMS, reducing heatsink requirements in 1–3 kW systems.
Q_g, typ	86 nC - determines gate drive power and rise/fall time control; compatible with standard 1–2 A peak gate drivers at 100–300 kHz switching.
E_oss @ 400 V	6.8 µJ - directly reduces turn-on switching loss in hard-switched topologies and sets minimum dead-time in ZVS designs.
t_rr	140 ns - ensures clean diode commutation with minimal voltage overshoot and ringing during reverse recovery in half-bridge configurations.
di/dt ruggedness	900 A/µs - guarantees reliable operation under high dI/dt stress in synchronous rectification and resonant tank current reversal.
T_j max	150°C - allows sustained operation in automotive under-hood and industrial power supply environments with active thermal management.

Pinout & Package

IPW65R150CFDA is housed in a TO-247 package with isolated mounting flange, rated for 195.3 W power dissipation at T_C = 25°C and R_thJC = 0.64 K/W. The package features industry-standard lead spacing and screw-mount compatibility (M3/M3.5).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control electrode	High-impedance input requiring <86 nC total charge; connected to gate driver output via low-inductance path to minimize ringing.
Pin 2 (Drain)	High-voltage power terminal	Connected to DC bus or transformer primary; electrically tied to metal tab - must be insulated from heatsink unless referenced to same potential.
Pin 3 (Source)	Power return and reference node	Serves as gate drive return and current sense point; low-inductance connection essential for stable switching and accurate R_DS(on)-based sensing.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - eliminates need for external SiC/Schottky anti-parallel diodes in LLC resonant converters.
High commutation ruggedness	di/dt = 900 A/µs - withstands rapid current reversal in phase-shifted full-bridge without latch-up or localized hot-spot formation.
Low R_DS(on) × Q_g FOM	12.9 Ω·nC - balances conduction and switching losses for optimal efficiency across 100–500 kHz operating range.
AEC-Q101 qualified	Qualified for automotive powertrain and charging applications - includes HTGB, HTRB, and UIS testing per AEC standard.
Green package	RoHS-compliant, Pb-free plating, halogen-free mold compound - meets EU ELV and China RoHS environmental compliance requirements.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3.3 kW LLC resonant DC-DC converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 250 kHz with 50% duty cycle and 400 V DC input.

Use Value: Enables >96.5% peak efficiency and <65°C case temperature at full load due to low E_oss and soft diode recovery.

Use Scenario: Active clamp forward primary switch in 2.5 kW telecom rectifier with 380–400 V DC input.

IC Role / Device Role / Timing Role: Main power switch handling 14 A RMS drain current and 100 A/µs di/dt during clamp discharge.

Use Value: Eliminates external snubber components and reduces clamp capacitor stress by 35% versus standard SJ MOSFETs.

Solar Inverter Auxiliary PSU

On-Board Charger (OBC) PFC Stage

Use Scenario: 650 V auxiliary SMPS supplying gate drivers and controllers in string inverters.

IC Role / Device Role / Timing Role: Discrete high-voltage switch in flyback or forward topology operating at 125 kHz.

Use Value: Achieves >89% efficiency at 25 W output with no derating up to 105°C ambient, enabled by R_thJC = 0.64 K/W.

Use Scenario: Boost switch in 6.6 kW single-phase OBC PFC stage with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching boost transistor with 12 A RMS current and 200 kHz switching frequency.

Use Value: Reduces total harmonic distortion (THD) to <3.2% and improves power factor to >0.999 at light load via precise zero-current switching.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD7A	R_DS(on) = 0.11 Ω (lower), Q_g = 105 nC (higher), E_oss = 10.2 µJ - higher conduction efficiency but increased switching loss.	Better suited for <150 kHz fixed-frequency hard-switched PFC where conduction loss dominates.	Select when system thermal budget favors lower R_DS(on) over gate drive capability and E_oss-driven losses.
STW65N60DM6	R_DS(on) = 0.12 Ω, Q_g = 92 nC, t_rr = 220 ns - slower diode, no AEC-Q101 qualification, higher Q_rr.	Limited to industrial/commercial SMPS; not recommended for automotive or high-reliability resonant designs.	Choose only for cost-sensitive non-automotive applications where diode softness and automotive qualification are not required.

Compared with IPW65R110CFD7A and STW65N60DM6, IPW65R150CFDA offers the optimal balance of R_DS(on), Q_g, and diode performance for 200–300 kHz resonant topologies requiring AEC-Q101 compliance - delivering lower total loss in LLC and reduced EMI versus alternatives with slower recovery.

Availability

IPW65R150CFDA is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, solar auxiliary PSUs, and on-board charger PFC stages requiring stable component supply, long-term lifecycle support, and automotive-grade reliability.

Supply support for IPW65R150CFDA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon-based high-voltage power devices.

The CoolMOS™ CFDA series was engineered specifically for high-efficiency resonant and soft-switching power conversion in automotive and industrial applications - emphasizing diode robustness, low E_oss, and AEC-Q101 compliance.

FAQ

What is the maximum continuous drain current rating for IPW65R150CFDA?

The maximum continuous drain current is 22.4 A at case temperature T_C = 25°C and 14.2 A at T_C = 100°C, limited by junction temperature. This rating assumes proper heatsinking with R_thJC = 0.64 K/W and accounts for R_DS(on) increase at elevated temperatures (0.351 Ω max at 150°C).

Is IPW65R150CFDA suitable for zero-voltage switching (ZVS) topologies?

Yes - its ultra-low E_oss (6.8 µJ @ 400 V), fast and soft body diode (t_rr = 140 ns, Q_rr = 0.7 µC), and high di/dt ruggedness (900 A/µs) make it ideal for LLC resonant and phase-shifted full-bridge converters where ZVS is critical for efficiency and EMI reduction.

Does IPW65R150CFDA require negative gate voltage for reliable turn-off?

No - the device has a gate threshold voltage of 3.5–4.5 V and operates reliably with 0 V turn-off. While -5 V to -10 V gate drive improves noise immunity in high-dV/dt environments, it is not required for functional operation or robustness per datasheet specifications.

How does the TO-247 package of IPW65R150CFDA compare thermally to D²PAK versions?

The TO-247 package provides identical R_thJC = 0.64 K/W as the D²PAK variant, but achieves higher absolute power dissipation (195.3 W vs. ~125 W for D²PAK on standard PCB) due to superior case-to-heatsink thermal interface and mechanical stability under vibration - critical for automotive and industrial deployments.

IPW65R150CFDAFKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q101

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R150CFDAFKSA1 FAQ

1.How can I place an order for IPW65R150CFDAFKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R150CFDAFKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R150CFDAFKSA1 reliable?

The price and inventory of IPW65R150CFDAFKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R150CFDAFKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R150CFDAFKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R150CFDAFKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R150CFDAFKSA1?

IPW65R150CFDAFKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R150CFDAFKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R150CFDAFKSA1?

For technical support, including IPW65R150CFDAFKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R150CFDAFKSA1 requirements.

6.How does Aetrix verify that IPW65R150CFDAFKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R150CFDAFKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R150CFDAFKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R150CFDAFKSA1?

All IPW65R150CFDAFKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R150CFDAFKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R150CFDAFKSA1 part is unused and in its original packaging.

Return procedure for IPW65R150CFDAFKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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