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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R150CFDFKSA2

Name: IPW65R150CFDFKSA2
Brand: Infineon Technologies
SKU: IPW65R150CFDFKSA2
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R150CFDFKSA2

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R150CFDFKSA2.pdf

Description:: MOSFET N-CH 650V 22.4A TO247-3

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Product details

Overview

IPW65R150CFDFKSA2 from Infineon Technologies is a 650 V, 22.4 A (T_C = 25°C), 0.15 Ω R_DS(on) max superjunction N-channel power MOSFET in TO-247 package, featuring ultra-fast body diode (t_rr = 140 ns, Q_rr = 0.7 µC), high commutation ruggedness (di/dt = 900 A/µs), and low E_oss (6.8 µJ @ 400 V). It is engineered for resonant switching topologies in server PSUs and telecom rectifiers.

For engineers reviewing the IPW65R150CFDFKSA2 datasheet, IPW65R150CFDFKSA2 pinout, IPW65R150CFDFKSA2 application, or IPW65R150CFDFKSA2 equivalent, key selection criteria include R_DS(on) × Q_g figure-of-merit (86 nC total gate charge), junction-to-case thermal resistance (0.64 °C/W), avalanche energy rating (614 mJ single-pulse), and robust body diode performance under hard commutation.

Technical Context

This CoolMOS™ CFD2 device implements a superjunction structure optimized for ZVS/ZCS resonant converters, with a gate threshold voltage of 3.5–4.5 V and plateau voltage of 6.4 V - enabling stable drive under wide input voltage ranges. Its low C_oss,eff (90 pF energy-related) minimizes turn-off losses in high-frequency LLC stages.

The integrated ultra-fast body diode supports bidirectional current flow in synchronous rectification and half-bridge resonant circuits without external anti-parallel diodes. Its 50 V/ns dv/dt ruggedness and 900 A/µs di/dt rating ensure reliable operation during fast switching transitions in high-efficiency SMPS designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	650 V - Maximum blocking voltage for primary-side switching in 400 V DC-link telecom/server applications.
R_DS(on), max	0.15 Ω @ T_J = 25°C - Enables low conduction loss at 14 A continuous drain current in thermally constrained layouts.
Q_g, typ	86 nC - Total gate charge defining driver strength requirement and switching speed trade-off in 100–300 kHz LLC designs.
E_oss @ 400 V	6.8 µJ - Stored output capacitance energy directly impacting zero-voltage switching margin and efficiency in resonant converters.
t_rr	140 ns - Reverse recovery time enabling clean commutation in hard- and soft-switched topologies without oscillation or shoot-through risk.
R_thJC	0.64 °C/W - Junction-to-case thermal resistance allowing 195.3 W power dissipation at T_C = 25°C with standard heatsink mounting.
I_D,pulse	72 A - Peak pulsed drain current supporting overload and inrush current handling in AC-DC front-end stages.

Pinout & Package

IPW65R150CFDFKSA2 is housed in a TO-247 package with isolated tab (drain-connected), rated for industrial-grade mounting torque (60 Ncm). The package provides low thermal resistance and high creepage/clearance for 650 V isolation requirements.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control terminal	Receives 10 V gate drive to fully enhance channel; 1.5 Ω internal gate resistance reduces ringing and simplifies external gate resistor selection.
Pin 2 (Drain)	High-voltage power terminal	Connected to drain metallization and package tab; carries full 650 V blocking voltage and main switching current path.
Pin 3 (Source)	Reference and return path	Serves as signal reference for gate drive and current sensing; forms low-inductance source loop critical for EMI control in high-dv/dt operation.

Key Features

Feature	Design Value
Ultra-fast body diode	t_rr = 140 ns, Q_rr = 0.7 µC - Eliminates need for external SiC/Schottky diodes in LLC secondary-side synchronous rectification.
High commutation ruggedness	di/dt = 900 A/µs - Sustains rapid current reversal during ZVS transitions without latch-up or localized heating in bridge-leg configurations.
Low FOM (R_DS(on) × Q_g)	12.9 Ω·nC - Balances conduction and switching losses for optimal efficiency across 100–500 kHz resonant converter operating range.
Industrial qualification	JEDEC J-STD-020 / JESD22 compliant - Validated for 150°C operation and long-term reliability in server, telecom, and solar inverter environments.
Pb-free & halogen-free	RoHS-compliant plating and mold compound - Meets environmental compliance requirements for global OEM production without process requalification.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant DC-DC converter for 48 V intermediate bus generation.

IC Role / Device Role / Timing Role: High-side switching element in half-bridge topology, operating at 200–300 kHz with ZVS turn-on.

Use Value: Low E_oss (6.8 µJ) ensures reliable zero-voltage switching across full load range, reducing switching losses by >30% vs. standard SJ MOSFETs.

Use Scenario: Active clamp forward or phase-shifted full-bridge stage in -48 V telecom rectifier systems.

IC Role / Device Role / Timing Role: Main power switch handling 400 V DC input and delivering regulated output with tight voltage regulation.

Use Value: 900 A/µs di/dt rating enables stable operation during rapid current reversal in active clamp reset cycles without parasitic oscillation.

LCD TV Backlight Inverter

Solar Microinverter

Use Scenario: Resonant half-bridge driving CCFL or LED backlight in large-format LCD TVs.

IC Role / Device Role / Timing Role: High-frequency switching transistor in series-resonant tank circuit with variable frequency control.

Use Value: Ultra-fast body diode (140 ns t_rr) prevents reverse recovery-induced voltage spikes that cause EMI and lamp flicker.

Use Scenario: DC-DC boost stage in single-phase microinverter converting PV panel output to 230 V AC grid interface.

IC Role / Device Role / Timing Role: High-efficiency switching element in interleaved boost converter operating up to 100 kHz.

Use Value: 0.15 Ω R_DS(on) minimizes conduction loss at partial-load conditions typical of residential solar generation profiles.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage resonant switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R110CFD	R_DS(on) = 0.11 Ω (lower), Q_g = 105 nC (higher), E_oss = 8.5 µJ (higher)	Better conduction loss but higher switching loss; requires stronger gate driver	Select when thermal budget is limited and switching frequency < 150 kHz
IPW65R099CFD	R_DS(on) = 0.099 Ω, Q_g = 125 nC, E_oss = 10.2 µJ	Higher peak efficiency at light loads but reduced ZVS margin above 200 kHz	Prefer for fixed-frequency hard-switched PFC or lower-frequency LLC where conduction dominates

Compared with IPW65R110CFD and IPW65R099CFD, IPW65R150CFDFKSA2 offers the best balance of gate drive simplicity (86 nC), ZVS margin (6.8 µJ E_oss), and thermal robustness (0.64 °C/W R_thJC) for mid-power resonant converters targeting 200–300 kHz operation.

Availability

IPW65R150CFDFKSA2 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and solar microinverters requiring stable component supply, long-lifecycle support, and industrial-grade reliability.

Supply support for IPW65R150CFDFKSA2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions, with leadership in silicon carbide and superjunction MOSFET technologies.

This device belongs to the CoolMOS™ CFD2 product line - designed specifically for high-efficiency resonant and soft-switching power conversion in industrial, telecom, and renewable energy systems.

FAQ

What is the maximum continuous drain current rating for IPW65R150CFDFKSA2?

The maximum continuous drain current is 22.4 A at case temperature T_C = 25°C, derating to 14.2 A at T_C = 100°C. This rating assumes proper heatsinking per the 0.64 °C/W junction-to-case thermal resistance and adherence to JEDEC industrial temperature limits (−55°C to +150°C).

Does IPW65R150CFDFKSA2 require a negative gate voltage for safe operation?

No. The device specifies a gate-source voltage range of −20 V to +20 V (static), with no requirement for negative bias. Gate drive can be implemented with standard 0–12 V or 0–15 V logic-level signals; the 6.4 V gate plateau voltage ensures stable enhancement without overdrive risk.

How does the body diode performance compare to standard silicon MOSFETs?

Its body diode achieves t_rr = 140 ns and Q_rr = 0.7 µC - over 3× faster and with 70% less recovered charge than conventional 650 V SJ MOSFETs. This enables reliable operation in bidirectional resonant topologies without external diode paralleling or snubbing.

Can IPW65R150CFDFKSA2 be used in hard-switched PFC circuits?

Yes - it supports continuous conduction mode (CCM) PFC with demonstrated avalanche energy rating of 614 mJ (single-pulse) and 0.93 mJ (repetitive). However, its optimized E_oss and di/dt make it most effective in soft-switched or transition-mode PFC where body diode performance is critical.

IPW65R150CFDFKSA2 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD2

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 22.4A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 150mOhm @ 9.3A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 900µA

Gate Charge (Qg) (Max) @ Vgs:: 86 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2340 pF @ 100 V

FET Feature:: -

Power Dissipation (Max):: 195.3W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3-41

IPW65R150CFDFKSA2 FAQ

1.How can I place an order for IPW65R150CFDFKSA2 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R150CFDFKSA2 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R150CFDFKSA2 reliable?

The price and inventory of IPW65R150CFDFKSA2 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R150CFDFKSA2 is usually 5 days.

3.What payment methods are accepted for IPW65R150CFDFKSA2?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R150CFDFKSA2 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R150CFDFKSA2?

IPW65R150CFDFKSA2 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R150CFDFKSA2 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R150CFDFKSA2?

For technical support, including IPW65R150CFDFKSA2 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R150CFDFKSA2 requirements.

6.How does Aetrix verify that IPW65R150CFDFKSA2 is sourced from the original manufacturer or authorized distributors?

All IPW65R150CFDFKSA2 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R150CFDFKSA2 meets industry standards.

7.What is the process for return or replacement of IPW65R150CFDFKSA2?

All IPW65R150CFDFKSA2 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R150CFDFKSA2, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R150CFDFKSA2 part is unused and in its original packaging.

Return procedure for IPW65R150CFDFKSA2:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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