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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IPW65R155CFD7XKSA1

Name: IPW65R155CFD7XKSA1
Brand: Infineon Technologies
SKU: IPW65R155CFD7XKSA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IPW65R155CFD7XKSA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IPW65R155CFD7XKSA1.pdf

Description:: HIGH POWER_NEW

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IPW65R155CFD7XKSA1 from Infineon is a 650 V superjunction MOSFET in PG-TO247-3 package, featuring 155 mΩ max R_DS(on), ultra-fast body diode (dI_F/dt = 1300 A/µs), and optimized for zero-voltage switching in LLC and phase-shift full-bridge topologies. It delivers high efficiency in industrial SMPS, server power supplies, telecom rectifiers, and EV charging systems.

For engineers reviewing the IPW65R155CFD7XKSA1 datasheet, IPW65R155CFD7XKSA1 pinout, IPW65R155CFD7XKSA1 application, or IPW65R155CFD7XKSA1 equivalent, key selection criteria include hard commutation ruggedness, E_oss (4.0 µJ @ 400 V), gate charge profile (Q_g = 28 nC), thermal resistance (R_thJC = 1.62 °C/W), and validated JEDEC industrial qualification.

Technical Context

This CoolMOS™ CFD7 device employs charge compensation technology with integrated fast-recovery body diode and ESD protection. Its low Q_gd/Q_g ratio (9/28 nC) and flat R_DS(on) vs. temperature curve enable stable operation up to T_j = 150 °C in high-frequency resonant converters.

The MOSFET supports soft-switching operation via low output capacitance (C_oss = 22 pF, Co(er) = 50 pF) and controlled turn-off delay (t_d(off) = 100 ns). Its dv/dt ruggedness (120 V/ns) and reverse diode dI_F/dt rating ensure robustness in high-dI/dt ZVS transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	650 V - Withstands 700 V transient drain-source voltage, enabling design margin for 400 V bus systems with overshoot.
R_DS(on) max	155 mΩ @ T_j = 25 °C - Enables low conduction loss at 15 A continuous current (T_C = 100 °C).
Q_g typ	28 nC - Reduces gate drive power and enables efficient 100–300 kHz switching in LLC controllers.
E_oss	4.0 µJ @ 400 V - Low stored output energy minimizes turn-on losses in ZVS operation.
dI_F/dt	1300 A/µs - Supports hard commutation without oscillation or failure in asymmetric half-bridge configurations.
R_thJC	1.62 °C/W - Allows 77 W power dissipation at T_C = 25 °C, supporting compact heatsink designs.
t_r/t_f	15 ns / 5 ns - Fast edge control reduces switching transition time and associated losses.

Pinout & Package

Package: PG-TO247-3 (lead-free, RoHS-compliant, isolated tab). Tab is electrically connected to Drain (Pin 2). Mounting torque: 60 N·cm for M3/M3.5 screws.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Gate)	Control input	Receives 10–13 V gate drive; RG = 10 Ω typical; plateau voltage = 5.7 V ensures stable Miller region control.
Pin 2 (Drain) + Tab	High-side power terminal	Tab is electrically tied to Drain; requires insulated mounting; handles 55 A pulsed current and 700 V transients.
Pin 3 (Source)	Reference return path	Serves as common reference for gate drive and current sensing; carries full load current and diode reverse recovery current.

Key Features

Feature	Design Value
Ultra-fast body diode	Reverse recovery time t_rr = 97–145.5 ns and Q_rr = 0.46–0.92 µC enable clean commutation in asymmetrical topologies without snubbers.
Low R_DS(on) tempco	R_DS(on) increases only ~1.8× from 25 °C to 150 °C - maintains predictable conduction loss across operating range.
High dv/dt ruggedness	120 V/ns rated - prevents false turn-on during high-slew-rate switching events in high-density power stages.
JEDEC industrial qualification	Qualified per JESD47 and JESD22 - guarantees reliability for 10+ year field life in telecom and server applications.
Integrated ESD protection	Class 1C HBM (≥1 kV) built-in - eliminates need for external ESD clamps in gate drive layout.

Applications

Server Power Supply

Telecom Rectifier

Use Scenario: Primary-side switch in 3 kW LLC resonant converter delivering 12 V/200 A output.

IC Role / Device Role / Timing Role: High-side ZVS switch operating at 250 kHz with 400 V input bus.

Use Value: 4.0 µJ E_oss and 1300 A/µs dI_F/dt reduce dead-time losses and eliminate diode ringing, improving efficiency by 0.8% at 50% load.

Use Scenario: Active clamp forward primary switch in 48 V/60 A telecom rectifier with 380 V DC bus.

IC Role / Device Role / Timing Role: Hard-switched main FET with synchronous rectification on secondary side.

Use Value: 155 mΩ R_DS(on) and 1.62 °C/W R_thJC allow 77 W dissipation without forced air, enabling fanless 1U chassis design.

EV Onboard Charger

Solar String Inverter

Use Scenario: PFC boost switch in bidirectional OBC handling 6.6 kW AC/DC and DC/AC conversion.

IC Role / Device Role / Timing Role: Critical conduction mode (CrCM) switch with 650 V blocking capability.

Use Value: Ultra-low Q_gd (9 nC) and flat R_DS(on) vs. temperature ensure stable CrCM operation across -40 °C to +105 °C ambient.

Use Scenario: DC-link switch in 10 kW string inverter using two-level NPC topology with 1000 V bus.

IC Role / Device Role / Timing Role: High-voltage leg switch in unidirectional DC/AC stage.

Use Value: 700 V V_DS transient rating and 120 V/ns dv/dt ruggedness prevent spurious turn-on during IGBT gate drive coupling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar 650 V superjunction MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IPW65R095CFD7	R_DS(on) = 95 mΩ (lower), Q_g = 42 nC (higher), same CFD7 die and package	Better conduction loss but higher gate drive loss; requires larger gate driver and heatsink area	Select when system prioritizes full-load efficiency over light-load performance and gate drive complexity
IPP65R190CFD7	R_DS(on) = 190 mΩ (higher), Q_g = 22 nC (lower), same CFD7 process but smaller die	Lower switching loss and gate drive demand; reduced thermal stress at partial load	Select when cost sensitivity and light-load efficiency dominate, especially in lower-power (<2 kW) SMPS

Compared with IPW65R155CFD7XKSA1, IPW65R095CFD7 trades higher gate energy for lower conduction loss, while IPP65R190CFD7 sacrifices R_DS(on) to reduce Q_g and cost-enabling optimization for either heavy-load thermal limits or light-load ZVS stability.

Availability

IPW65R155CFD7XKSA1 is available at Aetrix Electronics and suitable for server power supplies, telecom rectifiers, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and JEDEC-qualified reliability.

Supply support for IPW65R155CFD7XKSA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the CoolMOS™ CFD7 superjunction MOSFET product line, engineered specifically for high-efficiency, high-power-density resonant and soft-switching power converters in industrial and infrastructure applications.

FAQ

What is the maximum recommended gate resistor value for reliable ZVS operation?

A gate resistor of 10.2 Ω is specified in the datasheet test conditions for switching characterization. For ZVS in LLC topologies, values between 5 Ω and 15 Ω are typical; lower values improve turn-on speed but increase gate driver stress, while higher values risk incomplete turn-on during short dead times. Thermal derating must be applied above 100 °C case temperature.

Can IPW65R155CFD7XKSA1 be paralleled with identical units?

Yes, but Infineon explicitly recommends using ferrite beads on each gate line or separate totem-pole drivers to suppress gate oscillation and ensure current sharing. Layout symmetry, matched source inductance, and Kelvin-source connections are mandatory. Derate total current by 15% for thermal imbalance in multi-device configurations.

Does the internal body diode replace an external freewheeling diode in phase-shift full-bridge designs?

No-it is not a drop-in replacement. While the diode has fast recovery (t_rr ≤ 145.5 ns) and high dI_F/dt (1300 A/µs), its V_SD = 1.0 V at 6.4 A is higher than SiC Schottky diodes. It eliminates snubber needs but requires careful dead-time tuning to avoid cross-conduction losses in ZVS transitions.

Is the tab (Drain) electrically isolated from the mounting surface?

No-the tab is internally connected to Pin 2 (Drain) and is not electrically isolated. It must be mounted on an insulated heatsink or use a ceramic washer and isolation pad. The insulation withstand voltage (V_ISO) is not rated; safe operation requires external isolation matching system safety standards (e.g., IEC 62368-1).

IPW65R155CFD7XKSA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: CoolMOS™ CFD7

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 650 V

Current - Continuous Drain (Id) @ 25°C:: 15A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 155mOhm @ 6.4A, 10V

Vgs(th) (Max) @ Id:: 4.5V @ 320µA

Gate Charge (Qg) (Max) @ Vgs:: 28 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1283 pF @ 400 V

FET Feature:: -

Power Dissipation (Max):: 77W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO247-3

IPW65R155CFD7XKSA1 FAQ

1.How can I place an order for IPW65R155CFD7XKSA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IPW65R155CFD7XKSA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IPW65R155CFD7XKSA1 reliable?

The price and inventory of IPW65R155CFD7XKSA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IPW65R155CFD7XKSA1 is usually 5 days.

3.What payment methods are accepted for IPW65R155CFD7XKSA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IPW65R155CFD7XKSA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IPW65R155CFD7XKSA1?

IPW65R155CFD7XKSA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IPW65R155CFD7XKSA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IPW65R155CFD7XKSA1?

For technical support, including IPW65R155CFD7XKSA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IPW65R155CFD7XKSA1 requirements.

6.How does Aetrix verify that IPW65R155CFD7XKSA1 is sourced from the original manufacturer or authorized distributors?

All IPW65R155CFD7XKSA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IPW65R155CFD7XKSA1 meets industry standards.

7.What is the process for return or replacement of IPW65R155CFD7XKSA1?

All IPW65R155CFD7XKSA1 units undergo pre-shipment inspection (PSI). If there is an issue with IPW65R155CFD7XKSA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IPW65R155CFD7XKSA1 part is unused and in its original packaging.

Return procedure for IPW65R155CFD7XKSA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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